• Title/Summary/Keyword: Laser-induced thermochemical wet etching

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Laser-induced Thermochemical Wet Etching of Titanium for Fabrication of Microstructures (레이저 유도 열화학 습식에칭을 이용한 티타늄 미세구조물 제조)

  • 신용산;손승우;정성호
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.4
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    • pp.32-38
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    • 2004
  • Laser-induced thermochemical wet etching of titanium in phosphoric acid has been investigated to examine the feasibility of this method fur fabrication of microstructures. Cutting, drilling, and milling of titanium foil were carried out while examining the influence of process parameters on etch width, etch depth, and edge straightness. Laser power, scanning speed of workpiece, and etchant concentration were chosen as major process parameters influencing on temperature distribution and reaction rate. Etch width increased almost linearly with laser power showing little dependence on scanning speed while etch depth showed wide variation with both laser power and scanning speed. A well-defined etch profile with good surface quality was obtained at high concentration condition. Fabrication of a hole, micro cantilever beam, and rectangular slot with dimension of tess than 100${\mu}{\textrm}{m}$ has been demonstrated.

Laser-Induced Thermochemical Wet Etching of Mn-Zn Ferrite (Mn-Zn 페라이트의 레이저 유도 열화학 습식식각)

  • Lee, Kyoung-Cheoul;Lee, Cheon
    • Electrical & Electronic Materials
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    • v.10 no.7
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    • pp.668-673
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    • 1997
  • A Single-crystalline Mn-Zn Ferrite (110 orientation) was masklessly etched by focused Ar laser irradiation in an H$_3$PO$_4$ solution. The depth of the etched grooves increases with increasing a laser power, decreasing a scan speed, and increasing the H$_3$PO$_4$concentration. The width of the etched grooves increases with a increasing laser power, but was relatively insensitive to the scan speed and H$_3$PO$_4$concentration. High etching rate of up to 714 ${\mu}{\textrm}{m}$/s and an aspect ratio of 6 for vertical slab structure have been obtained by the light-guiding effect of the laser bean in the H$_3$PO$_4$ solution.

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