• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.260-264
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• 2008

We analyzed the lowering of transmittance due to lateral field effect in the edge of pixel. We studied the method to solve the problem of VA-LCD. It occurred director distortion and transmittance lowering by strong lateral field in the edge of pixel. For analyzing the director distortion and improving the transmittance lowering, we applied the edge pattern to PVA-LCD of cross pattern. As a results, transmittance in the new VA modes were higher than that of conventional VA modes.

• Current Optics and Photonics
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• 제6권2호
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• pp.191-195
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• 2022

We investigate the lateral far-field pattern characteristics, including divergence angle change and far-field pattern analysis as output power increases, of narrow-emitter-width 850 nm GaAs/AlGaAs laser diodes (LDs). Each LD has a cavity of 1200 and 1500 ㎛ and narrow emitter width of 2.4 ㎛ for the top and 4.6 ㎛ for the bottom. The threshold currents are 35 and 40 mA, and L-I kinks appear at power levels of 326 and 403 mW, respectively. The divergence angle tends to increase due to the occurrence of first-order lateral mode and the thermal lensing effect. But with the L-I kink, the divergence angle decreases and the far-field pattern becomes asymmetric. This is due to coherent superposition between the fundamental and the first-order lateral mode. We provide detailed explanations for these observations based on high-power laser diode simulation results.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.177.2-177
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• 2003

• 복합신소재구조학회 논문집
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• 제7권1호
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• pp.19-24
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• 2016

Most of the soundproof tunnels generate significant discharge noise through their inlets and outlets so that the length of the tunnel has been extended frequently than required to minimize the effect on such discharge noise. Thus, in this paper, we investigate reduction capability of discharge noise from the sound proof tunnel installed with lateral sound-absorbing panels on the partitioned truss members in the longitudinal direction of the tunnel. In conclusion, noise field analysis results shows that the sound proof tunnels with lateral sound-absorbing panels have an effect on discharge noise abatement and thereby tunnel's length reduction.

• 한국방재학회:학술대회논문집
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• 한국방재학회 2008년도 정기총회 및 학술발표대회
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• pp.329-332
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• 2008

This study presents a viscoelastic characterization of flexible pavement subjected to moving loads. A series of field tests have been conducted on three pavement sections (A2, A5, and A8) at the Korea Expressway Corporation (KEC) test road. The effect of vehicle speed on the responses of each test section was investigated at three speeds: 25km/hr, 50km/hr, and 80km/hr. During the test, both longitudinal and lateral strains were measured at the bottom of asphalt layers and in-situ measurements were compared with the results of finite element (FE) analyses. A commercial FE package was used to model each test section and a step loading approximation has been adopted to simulate the effect a moving vehicle. Field responses reveal the strain anisotropy (i.e., discrepancy between longitudinal and lateral strains) and the amplitude of strain normally decreases as the vehicle speed increases. In most cases, lateral strain was smaller than the longitudinal strain, and strain reduction was more significant in lateral direction.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.128-128
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• 2003

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1442-1444
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• 2001

A new low-temperature poly-Si TFT employing a counter-doped lateral body terminal is proposed and fabricated, in order to enhance the stability of poly-Si TFT driving circuits. The LBT structure effectively suppresses the kink effect by collecting the counter-polarity carriers and suppresses the hot carrier effect by reducing the peak lateral field at the drain junction. The proposed device is immune to dynamic stress, so that it is suitable for low voltage and high speed driving circuits of AMLCD.

• 한국세라믹학회지
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• 제38권10호
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• pp.871-875
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• 2001

Cobalt silicidation at sidewall spacer edge of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with post annealing treatment for capacitor forming process has been investigated as a function of dopant species. Cobalt silicidation of nMOSFET with n-type Lightly Doped Drain (LDD) and pMOSFET with p-type LDD produces a well-developed cobalt silicide with its lateral growth underneath the sidewall spacer. In case of pMOSFET with n-type LDD, however, a void is formed at the sidewall spacer edge with no lateral growth of cobalt silicide. The void formation seems to be due to a retarded silicidation process at the LDD region during the first Rapid Thermal Annealing (RTA) for the reaction of Co with Si, resulting in cobalt mono silicide at the LDD region. The subsequent second RTA converts the cobalt monosilicide into cobalt disilicide with the consumption of Si atoms from the Si substrate, producing the void at the sidewall spacer edge in the Si region. The void formed at the sidewall spacer edge serves as a resistance in the current-voltage characteristics of the pMOSFET device.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.38-42
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• 1999

Using the LOCOS process, we have fabricated the lateral type polysilicon field emission triodes with poly-Si/oxide/Si structure and investigated their current-voltage characteristics for three biasing modes of operation. The fabricated devices exhibit excellent electrical performances such as a relatively low turn-on anode voltage of 14 V at VGC = 0V, a stable and high emission current of 92${\mu}$A/triode over 90 hours, a small gate leakage current of 0.23 ${\mu}$A/triode and an outstanding transconductance of 57${\mu}$S/5triodes at VGC = 5V and VAC = 26V. these superior electrical operation is believed to be due to a large field enhancement effect, which is related to the sharp cathode tips produced by the LOCOS process as well as the high aspect ratio (height /radius ) of the cathode tip end.

• Journal of Magnetics
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• 제12권4호
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• pp.152-155
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• 2007

Spin dependent transport was investigated in lateral $Py(Ni_{81}Fe_{19})/Au/Py$ spin valve devices. Clear spin valve effect was observed in conventional four-terminal measurement geometry. Higher resistance was found in antiparallel magnetization field of two Py electrodes which is determined by anisotropy magnetoresistance (AMR) measurements. The rectangular shape of spin signal together with good agreement of switching field convinces observed spin valve signal is resulted from effective spin injection and detection. The magnetoresistance ratio decays exponentially with channel length by which spin diffusion length of Au channel was estimated to be 76 nm.