• Title/Summary/Keyword: Lead-on-chip

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Appropriate Package Structure to Improve Reliability of IC Pattern in Memory Devices (메모리 반도체 회로 손상의 예방을 위한 패키지 구조 개선에 관한 연구)

  • 이성민
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.32-35
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    • 2002
  • The work focuses on the development of a Cu lead-frame with a single-sided adhesive tape for cost reduction and reliability improvement of LOC (lead on chip) package products, which are widely used for the plastic-encapsulation of memory chips. Most of memory chips are assembled by the LOC packaging process where the top surface of the chip is directly attached to the area of the lead-frame with a double-sided adhesive tape. However, since the lower adhesive layer of the double-sided adhesive tape reveals the disparity in the coefficient of thermal expansion from the silicon chip by more than 20 times, it often causes thermal displacement-induced damage of the IC pattern on the active chip surface during the reliability test. So, in order to solve these problems, in the resent work, the double-sided adhesive tape is replaced by a single-sided adhesive tape. The single-sided adhesive tape does net include the lower adhesive layer but instead, uses adhesive materials, which are filled in clear holes of the base film, just for the attachment of the lead-frame to the top surface of the memory chip. Since thermal expansion of the adhesive materials can be accommodated by the base film, memory product packaged using the lead-flame with the single-sided adhesive tape is shown to have much improved reliability. Author allied this invention to the Korea Patent Office for a patent (4-2000-00097-9).

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Estimation of Machinability of Lead Brass Based on In-Situ Observation in Scanning Electron Microscope (전자현미경 In-Situ 관찰방법을 이용한 황동의 절삭성평가)

  • Jung, Seung-Boo;Lim, Ok-Dong;An, Seong-Uk
    • Applied Microscopy
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    • v.24 no.3
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    • pp.87-93
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    • 1994
  • In order to elucidate the machinability of lead brass, orthogonal machining experiment was conducted in SEM(Scanning Electron Microscope) equipped with a micro-machining device at a cutting speed of $7{\mu}m/s$ for brass containing 0.2 to 3wt% Pb. The microfactors (i.e., shear angle, contact length between chip and tool) were determined by in-situ observations. Machinability of brass containing lead is discussed in terms of the microfactors and the cutting resistant force tested by lathe cutting. The dynamic behavior of the chip formation of lead brass during the machining process was examined: The chips of lead brass form as a shear angle type. The shear angle increases with the content of lead in (6:4) brass. The pronounced effect of lead on the contact length between chip and tool was observed above 1% Pb. The cutting resistant force tested by lathe decreases remarkably with the lead content in brass. The observed microfactors are in close relation to the tested resistant force in macromachining.

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Cutting Chip Forms on the Cutting Condition and Tempering Temperatures of Lead-free Brass (무연황동의 절삭 칩 형태에 미치는 절삭조건과 템퍼링 온도의 영향)

  • Joo, Y.S.;Lee, S.B.;Kim, S.Y.;Joo, C.S.;Jung, B.H
    • Journal of the Korean Society for Heat Treatment
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    • v.25 no.1
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    • pp.14-21
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    • 2012
  • The effects of cutting condition and tempering temperature for the shape of cutting chip were investigated. For this purpose, a lead-free brass containing 1wt.% of Bi extruded at $750^{\circ}C$ in straight turning was used in this study. The cutting chip preferred was mainly found to be loose form of arc chips with curling discontinuity, and these were formed by shear fracture. However, some of fragmental element chip were found to be mixed when tempering temperature was as high as $500^{\circ}C$. The form and size of chip was more affected by feed rate than by tempering temperature and cutting rate. In addition, the cutting surface was observed to be formed more rough in the case of high feed rate and low cutting rate compared to low feed rate and high cutting rate.

Improvement of COF Bending-induced Lead Broken Failure in LCD Module (LCD Module내 COF Bending에 따른 Lead Broken Failure의 개선)

  • Shim, Boum-Joo;Choi, Yeol;Yi, Jun-Sin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.3
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    • pp.265-271
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    • 2008
  • TCP(Tape Carrier Package), COG (Chip On Glass), COF(Chip On Film) are three methods for connecting LDI(LCD Driver IC) with LCD panels. Especially COF is growing its portion of market place because of low cost and fine pitch correspondence. But COF has a problem of the lead broken failure in LCD module process and the usage of customer. During PCB (Printed Circuit Board) bonding process, the mismatch of the coefficient of thermal expansion between PCB and D-IC makes stress-concentration in COF lead, and also D-IC bending process during module assembly process makes the level of stress in COF lead higher. As an affecting factors of lead-broken failure, the effects of SR(Solder Resister) coating on the COF lead, surface roughness and grain size of COF lead, PI(Polyimide) film thickness, lead width and the ACF(Anisotropic Conductive Film) overlap were studied, The optimization of these affecting manufacturing processes and materials were suggested and verified to prevent the lead-broken failure.

Optimum Design of Bonding Pads for Prevention of Passivation Damage in Semiconductor Devices Utilizing Lead-on-Chip (LOC) Die Attach Technique (리드 온 칩 패키징 기술을 이용하여 조립된 반도체 제품에서 패시베이션 파손을 막기 위한 본딩패드의 합리적 설계)

  • Lee, Seong-Min;Kim, Chong-Bum
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.2
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    • pp.69-73
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    • 2008
  • This article shows that the susceptibility of the device pattern to thermal stress-induced damage has a strong dependence on its proximity to the device comer in semiconductor devices utilizing lead-on-chip (LOC) die attach technique. The result, as explained based on numerical calculation and experiment, indicateds that the stress-driven damage potential of the passivation layer is the highest at the device comer. Thus, the bonding pads, which are very susceptible to passivation damage, should be designed to be located along the central region rather than the peripheral region of the device.

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Comparisons of Interfacial Reaction Characteristics on Flip Chip Package with Cu Column BOL Enhanced Process (fcCuBE®) and Bond on Capture Pad (BOC) under Electrical Current Stressing

  • Kim, Jae Myeong;Ahn, Billy;Ouyang, Eric;Park, Susan;Lee, Yong Taek;Kim, Gwang
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.4
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    • pp.53-58
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    • 2013
  • An innovative packaging solution, Flip Chip with Copper (Cu) Column bond on lead (BOL) Enhanced Process (fcCuBE$^{(R)}$) delivers a cost effective, high performance packaging solution over typical bond on capture pad (BOC) technology. These advantages include improved routing efficiency on the substrate top layer thus allowing conversion functionality; furthermore, package cost is lowered by means of reduced substrate layer count and removal of solder on pad (SOP). On the other hand, as electronic packaging technology develops to meet the miniaturization trend from consumer demand, reliability testing will become an important issue in advanced technology area. In particular, electromigration (EM) of flip chip bumps is an increasing reliability concern in the manufacturing of integrated circuit (IC) components and electronic systems. This paper presents the results on EM characteristics on BOL and BOC structures under electrical current stressing in order to investigate the comparison between two different typed structures. EM data was collected for over 7000 hours under accelerated conditions (temperatures: $125^{\circ}C$, $135^{\circ}C$, and $150^{\circ}C$ and stress current: 300 mA, 400 mA, and 500 mA). All samples have been tested without any failures, however, we attempted to find morphologies induced by EM effects through cross-sectional analysis and investigated the interfacial reaction characteristics between BOL and BOC structures under current stressing. EM damage was observed at the solder joint of BOC structure but the BOL structure did not show any damage from the effects of EM. The EM data indicates that the fcCuBE$^{(R)}$ BOL Cu column bump provides a significantly better EM reliability.

A classification techiniques of J-lead solder joint using neural network (신경 회로망을 이용한 J-리드 납땜 상태 분류)

  • Yu, Chang-Mok;Lee, Joong-Ho;Cha, Young-Yeup
    • Journal of Institute of Control, Robotics and Systems
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    • v.5 no.8
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    • pp.995-1000
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    • 1999
  • This paper presents a optic system and a visual inspection algorithm looking for solder joint defects of J-lead chip which are more integrate and smaller than ones with Gull-wing on PCBs(Printed Circuit Boards). The visual inspection system is composed of three sections : host PC, imaging and driving parts. The host PC part controls the inspection devices and executes the inspection algorithm. The imaging part acquires and processes image data. And the driving part controls XY-table for automatic inspection. In this paper, the most important five features are extracted from input images to categorize four classes of solder joint defects in the case of J-lead chip and utilized to a back-propagation network for classification. Consequently, good accuracy of classification performance and effectiveness of chosen five features are examined by experiment using proposed inspection algorithm.

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A Study on the Development of Computer Aider Die Design System for Lead Frame of Semiconductor Chip

  • Kim, Jae-Hun
    • International Journal of Precision Engineering and Manufacturing
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    • v.2 no.2
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    • pp.38-47
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    • 2001
  • This paper decribes the development of computer-aided design of a very precise progressice die for lead frame of semiconductor chip. The approach to the system is based on knowledgr-based rules. Knowledge of fie이 experts. This system has been written in AutoLISP using AutoCAD ona personal computer and the I-DEAS drafting programming Language on the I-DEAS mater series drafting with on HP9000/715(64) workstation. Data exchange between AutoCAD and I-DEAS master series drafting is accomplished using DXF(drawing exchange format) and IGES(initial graphics exchange specification) files. This system is composed of six main modules, which are input and shape treatment, production feasibility check, strip layout, data conversion, die layout, and post processing modules. Based on Knowledge-based rules, the system considers several factors, such as V-notches, dimple, pad chamfer, spank, cavity punch, camber, coined area, cross bow, material and thickness of product, complexities of blank geometry and punch profiles, specifications of available presses, and the availability of standard parts. As forming processes and the die design system using 2D geometry recognition are integrated with the technology of process planning, die design, and CAE analysis, the standardization of die part for lead frames requiting a high precision process is possible. The die layout drawing generated by the die layout module s displayed in graphic form. The developed system makes it possible to design and manufacture lead frame of a semiconductor more efficiently.

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Factors to Influence Thermal-Cycling Reliability of Passivation Layers in Semiconductor Devices Utilizing Lead-on-Chip (LOC) Die Attach Technique (리드 온 칩 패키징 기술을 이용하여 조립된 반도체 제품에서 패시베이션 박막의 TC 신뢰성에 영향을 미치는 요인들)

  • Lee, Seong-Min;Lee, Seong-Ran
    • Korean Journal of Materials Research
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    • v.19 no.5
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    • pp.288-292
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    • 2009
  • This article shows various factors that influence the thermal-cycling reliability of semiconductor devices utilizing the lead-on-chip (LOC) die attach technique. This work details how the modification of LOC package design as well as the back-grinding and dicing process of semiconductor wafers affect passivation reliability. This work shows that the design of an adhesion tape rather than a plastic package body can play a more important role in determining the passivation reliability. This is due to the fact that the thermal-expansion coefficient of the tape is larger than that of the plastic package body. Present tests also indicate that the ceramic fillers embedded in the plastic package body for mechanical strengthening are not helpful for the improvement of the passivation reliability. Even though the fillers can reduce the thermal-expansion of the plastic package body, microscopic examinations show that they can cause direct damage to the passivation layer. Furthermore, experimental results also illustrate that sawing-induced chipping resulting from the separation of a semiconductor wafer into individual devices might develop into passivation cracks during thermal-cycling. Thus, the proper design of the adhesion tape and the prevention of the sawing-induced chipping should be considered to enhance the passivation reliability in the semiconductor devices using the LOC die attach technique.

Flip-Chip Package of Silicon Pressure Sensor Using Lead-Free Solder (무연솔더를 이용한 실리콘 압력센서의 플립칩 패키지)

  • Cho, Chan-Seob
    • Journal of the Korean Society of Industry Convergence
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    • v.12 no.4
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    • pp.215-219
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    • 2009
  • A packaging technology based on flip-chip bonding and Pb-free solder for silicon pressure sensors on printed circuit board (PCB) is presented. First, the bump formation process was conducted by Pb-free solder. Ag-Sn-Cu solder and the pressed-screen printing method were used to fabricate solder bumps. The fabricated solder bumps had $189-223{\mu}m$ width, $120-160{\mu}m$ thickness, and 5.4-6.9 standard deviation. Also, shear tests was conducted to measure the bump shear strength by a Dage 2400 PC shear tester; the average shear strength was 74 g at 0.125 mm/s of test speed and $5{\mu}m$ shear height. Then, silicon pressure sensor packaging was implemented using the Pb-free solder and bump formation process. The characteristics of the pressure sensor were analogous to the results obtained when the pressure sensor dice are assembled and packaged using the standard wire-bonding technique.

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