• Journal of Power Electronics
• /
• v.16 no.3
• /
• pp.970-981
• /
• 2016

Leakage currents occur in pulse-width-modulated voltage source inverter (PWM-VSI)-fed permanent magnet synchronous motor (PMSM) drives for air-conditioners, which seriously affect system safety and operation performance. High accuracy modeling and prediction of leakage currents are key issues for the design and implementation of air-conditioning products. In this study, the generation mechanism of leakage currents is discussed. A systematic modeling approach of leakage currents is proposed, including the modeling of leakage current sources and leakage current paths. By using the proposed approach, the complete model of leakage currents in PWM-VSI-fed PMSM drives for air-conditioners has been developed based on the extraction of all parameters. A comparison between the simulated leakage currents based on the developed model and measured leakage currents in the outdoor unit of an air-conditioning product is conducted. The comparison verifies the effectiveness of the proposed modeling approach, and the developed model exhibits high accuracy within a wide frequency range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.10
• /
• pp.595-600
• /
• 2016

In this paper, the oxide currents of thin silicon oxides is investigated. The oxide currents associated with the on time of applied voltage were used to measure the distribution of voltage stress induced traps in thin silicon oxide films. The stress induced leakage currents were due to the charging and discharging of traps generated by stress voltage in the silicon oxides. The stress induced leakage current will affect data retention in memory devices. The oxide current for the thickness dependence of stress current and stress induced leakage currents has been measured in oxides with thicknesses between $109{\AA}$, $190{\AA}$, $387{\AA}$, and $818{\AA}$ which have the gate area $10^{-3}cm^2$. The oxide currents will affect data retention and the stress current, stress induced leakage current is used to estimate to fundamental limitations on oxide thicknesses.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 2006.05a
• /
• pp.338-341
• /
• 2006

This paper presents the leakage current characteristics of ZnO varistors exposed to the $8/20{\mu}s$ lightning impulse currents as functions of the number of injection and amplitude of impulse currents. The surge simulator system ECAT that can generate $8/20{\mu}s$ impulse currents with a peak short-circuit of $5[kA_p]$ was used. Leakage currents flowing through ZnO varistors subjected to the $8/20{\mu}s$ impulse currents were measured under 60 Hz AC voltages. The trend curves of resistive leakage current of ZnO varistors were analytically calculated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.855-858
• /
• 2001

The stress induced leakage currents of thin silicon oxides is investigated in the VLSI implementation of a self learning neural network integrated circuits using a linearity synapse transistor. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 41 ${\AA}$, 86${\AA}$, which have the channel width ${\times}$ length 10 ${\times}$1${\mu}$m, 10 ${\times}$0.3${\mu}$m respectively. The stress induced leakage currents will affect data retention in synapse transistors and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor made by thin silicon oxides has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• Proceedings of the IEEK Conference
• /
• summer
• /
• pp.209-212
• /
• 2004

In this paper, The stress induced leakage currents of thin silicon oxides is investigated in the nano scale structure implementation for Soc. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41\square\;and\;113.4\square,$ which have the channel width x length 10x1um, respectively. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.428-431
• /
• 2003

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $113.4{\AA}$ and $814{\AA}$, which have the gate area 10-3cm2. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.08a
• /
• pp.142-145
• /
• 2002

This paper describes an influence of system voltage harmonics on arrester deterioration diagnostic techniques based on leakage current measurement because the resistive current is composed of two components caused by nonlinear characteristics of arrester and by system voltage harmonics. Resistive leakage currents of arresters, which can be evaluated by the third harmonic component of total leakage currents, increase with its deterioration progress. In this paper, we developed a PSpice model for ZnO arrester to simulate the harmonics' effect described above. In simulation, pure sinusoidal voltage and the $3^{rd}$ harmonic voltage are applied to the model, and the leakage current changes are compared. The simulation results showed that the magnitudes of resistive leakage current depend not only on the phase of system voltage harmonics but also on the magnitude of it.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.5C no.3
• /
• pp.131-137
• /
• 2005

This paper describes a new approach to the algorithm and fundamental characteristics of the device for monitoring the leakage currents flowing through zinc oxide (ZnO) surge arresters. In order to obtain a technique for a new on-line monitoring device that can be used in the deterioration diagnosis of ZnO surge arresters, the new algorithm and on-line leakage current detection device for extracting the resistive and capacitive currents using the phase shift addition method were proposed. The computer-based on-line monitoring device can sense accurately the power frequency leakage currents flowing through ZnO surge arresters. The on-line leakage current monitoring device of ZnO surge arresters proposed in this work has the high sensitivity compared to the third harmonic leakage current detection devices. As a consequence, it was found that the proposed leakage current monitoring device would be useful for forecasting the defects and degradation of ZnO surge arresters.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.27 no.3
• /
• pp.79-86
• /
• 2013

In order to analyze the electrical performance of ZnO surge arresters stressed by the combined DC and AC voltages that are generated in DC/AC converter systems, the leakage current properties of ZnO surge arrester blocks deteriorated by impulse currents were investigated. The test specimens were deteriorated by the 8/$20{\mu}s$ impulse current of 2.5kA and the leakage currents flowing into the deteriorated zinc oxide(ZnO) arrester blocks subjected to the combined DC and power frequency AC voltages are measured. As a result, the leakage currents flowing through deteriorated ZnO surge arrester blocks were higher than those flowing through the fine ZnO surge arrester blocks and the larger the injection number of 8/$20{\mu}s$ impulse current of 2.5kA is, the greater the leakage current is. The leakage current-voltage curves(I-V curves) of the fine and deteriorated ZnO surge arrester blocks stressed by the combined DC and AC voltages show significant difference in the low conduction region. Also the cross-over phenomenon is observed at the voltage close to the knee of conduction on plots of I-V curves.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.11
• /
• pp.483-489
• /
• 2005

This study performs a simulation for an accumulation mechanism of contaminants, which were produced in an industrial belt of inland, on the surface of insulators. From the simulation, silicon insulators presented higher accumulation than that of EPDM(Ethylene Propylene Diene Terpolymer : EPDM) insulators on the same distance in the case of the Virgin polymer insulator, and this result presented the same result in the insulator applied in actual fields. In the case of the accumulation test for the Virgin insulator and insulators used in actual fields, it is evident that the Virgin insulator presented more accumulation than that of the insulator used in actual fields. The results can be caused by the generation of LMW (Low Molecular Weight) on the external material of polymer insulators, and the level of the accumulation can be changed according to the degree of the continuous generation of LMW. In order to simulate a certain pollution of an industrial belt, which is located along the coastline, leakage currents were measured by applying the contaminant compulsively that was produced with salts and Kaolin according to the ratio of its weight on the surface of insulators. The more increase in the content of Kaolin pollution, the level of leakage currents on the surface of polymer insulator more increased. In addition, the approaching time to the maximum value of leakage currents presented a nearly constant level regardless of the content of Kaolin. The level of leakage currents significantly decreased according to the passage of time, and the level of leakage currents on the surface maintained a constant level at a specific time regardless of the content of Kaolin.