• Journal of Power System Engineering
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• v.4 no.4
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• pp.41-47
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• 2000

Fatigue crack propagation rate and threshold characteristics of the SA516/70 steel which is used for the low temperature pressure vessels, were studied in the room temperature of $25^{\circ}C$ and low temperature ranges of $-10^{\circ}C,\;-30^{\circ}C,\;-60^{\circ}C\;and\;-80^{\circ}C$ with stress ratio of R=0.1. In the logarithmic relationship between the fatigue crack propagation rate($d{\alpha}/dN$) and stress intensity factor range ${\Delta}K$, the linear relationship was obtained up to $d{\alpha}/dN=4.425{\times}10^4mm/cycle$ in the same of room temperature, but in low temperature case, the relationship was extended to the range of low crack propagation rate. The fractured specimens were examined by SEM. Tested results showed that specimen failed at low temperature exhibit the quasi-cleavage fracture formation however considerable ductility proceed final fracture.

• Journal of the Optical Society of Korea
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• v.6 no.3
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• pp.59-71
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• 2002

Photonic band gap structures have a high potential for nearly zero-threshold lasers. This paper describes new-types of low-threshold photonic crystal lasers fabricated in InGaAsP slab waveguides free-standing in air. Two-types of photonic crystal lasers are studied. One is a single-cell nano-cavity laser formed in a square array of air holes. This photonic band gap laser operates in the smallest possible whispering gallery mode with a theoretical Q >30000 and exhibits low threshold pump power of 0.8 mW at room temperature. The nther laser does not have any cavity structure and the lasing operation originates from the enhanced optical density of states near photonic band edges. A very low threshold of 35 $\mu$W (incident pump power) is achieved from this laser at 80 K, one of the lowest values ever reported. This low threshold is benefited from low optical losses as well as enhanced material gain at low temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.864-867
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• 2003

Since the development of semiconductors, various related research has been conducted. During research, silicon diodes have been commonly used because of their simplicity and low cost in the manufacturing process. This research deals with p-n junction threshold voltages from silicon diodes due to transport current at a cryogenic temperature. At a cryogenic temperature(77K) we could get minimum current which junction threshold voltage becomes constant. This is experimented on GPIB communication and it consist of programmable current source, multimeter which gauge the threshold voltage in a very low temperature caused by transport current from 5nA to 1mA and $LN_2$(77K) for coolant. This experiment is programmed all process using Measurement studio(Lab window) tool.

• Journal of Ocean Engineering and Technology
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• v.14 no.3
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• pp.78-83
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• 2000

In this study, CT specimens were prepared from AST SA516 Gr. 70 which was used for pressure vessel plates for room and low temperature service. And we got the following characteristics from fatigue crack growth test carried out in the environment of room and low temperature at 25$^{\circ}C $, -60$^{\circ}C $, -80$^{\circ}C $ and -100$^{\circ}C $ and in the range of stress ratio of 0.05, 0.3 by means of opening mode displacement. At the constant stress ratio, the threshold stress intensity factor range ${\delta} K_{th}$ in the early stage of fatigue crack growth (Region I) and stress intensity factor range $\delta $K in the stable of fatigue crack growth (Region II) were increased in proportion to descending temperature. It was assumed that the fatigue resistance characteristics and fracture strength at low temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region. The straight line slope relation of logarithm da/dN -$\delta $K in Region II, that is, the fatigue crack growth exponent m increased with descending temperature at the constant stress ratio. It was assumed that the fatigue crack growth rate da/dN is rapid in proportion to descending temperature in Region II and the cryogenic-brittleness greatly affect a material with decreasing temperature.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2001.05a
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• pp.326-331
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• 2001

In this study. CT specimens were prepared from ASME SA5l6 which was used for pressure vessel plates for room and low temperature service. And we got the following characteristics from fatigue crack growth test carried out in the environment of room and low temperature at $25^{\circ}C$, -3$0^{\circ}C$, -6$0^{\circ}C$, -8$0^{\circ}C$, -10$0^{\circ}C$ and -12$0^{\circ}C$ in the range of stress ratio of 0.1 by means of opening mode displacement. At the constant stress ratio, the threshold stress intensity factor range ΔKsub/th/ in the early stage of fatigue crack growth ( Region I) and stress intensity factor range ΔK in the stable of fatigue crack growth ( Region II) was increased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region. The straight line slope relation of logarithm da.dN -ΔK in RegionII, that is, the fatigue crack growth exponent m increased with descending temperature at the constant stress ratio. It assumed that the fatigue crack growth rate da/dN is rapid in proportion to descend temperature in Region II and the cryogenic-brittleness greatly affect a material with decreasing temperature.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.50 no.9
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• pp.399-399
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• 2001

This paper proposes TAR(Threshold Autoregressive) model for short-term load forecasting including temperature variable. In the scatter diagram of daily peak load versus daily high or low temperature, we can find out that the load-temperature relationship has a negative slope in the lower regime and a positive slope in the upper regime due to the heating and cooling load, respectively. TAR model is adequate for analyzing these phenomena since TAR model is a piecewise linear autoregressive model. In this paper, we estimated and forecasted one day-ahead daily peak load by applying TAR model using this load-temperature characteristic in these regimes. The results are compared with those of linear and quadratic regression models.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.50 no.9
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• pp.309-405
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• 2001

This paper proposes TAR(Threshold Autoregressive) model for short-term load forecasting including temperature variable. In the scatter diagram of daily peak load versus daily high or low temperature, we can find out that the load-temperature relationship has a negative slope in the lower regime and a positive slope in the upper regime due to the heating and cooling load, respectively. TAR model is adequate for analyzing these phenomena since TAR model is a piecewise linear autoregressive model. In this paper, we estimated and forecasted one day-ahead daily peak load by applying TAR model using this load-temperature characteristic in these regimes. The results are compared with those of linear and quadratic regression models.

• Environmental and Resource Economics Review
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• v.13 no.3
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• pp.417-440
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• 2004

For the behavior of the wholesale spot price, a regime switching model with time-varying transition probabilities was estimated using the data from the PJM (Pennsylvania-New Jersey-Maryland) market. By including the temperature as an explanatory variable in the transition probability equations, the threshold effect of changing regime is clearly enhanced. And hence the predictability of the price spikes was improved. This means that the model showed a very clear threshold effect, with a low probability of switching for low loads and low temperatures and a high probability for high loads and high temperatures. And temperature showed a clearer threshold effect than load does. This implies that weather-related contracts may help to hedge against the risk in the cost of buying electricity during a summer.

• 전기의세계
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• v.22 no.2
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• pp.45-50
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• 1973

Amorphous semiconducting diodes from As Te Ge systm of which resitivity are 10$^{6}$ -10$^{8}$ .ohm.-cm order, are made and they exhibited several conducting states. A high conductivity, low conductivity and memory state are reported. Temperature dependency of the specimens are widerange. According to the procedure and cooling method, specimens are made easily or not. Threshold voltage of switching and memory diodes is in proportional to compositonal quantity of Arsenic. Threshold voltage is changed widely according to ambient temperature. Threshold voltage of #132 is 620V at 25.deg. C, 70V at 100.deg. C.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.88-93
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• 2020

Based on the capture-emission energy (CEE) maps of CMOS devices, a physics-informed machine learning model for the bias temperature instability (BTI)-induced threshold voltage shifts and low frequency noise is presented. In order to incorporate physics theories into the machine learning model, the integration of artificial neural network (IANN) is employed for the computation of the threshold voltage shifts and low frequency noise. The model combines the computational efficiency of IANN with the optimal estimation of Gaussian mixture model (GMM) with soft clustering. It enables full lifetime prediction of BTI under various stress and recovery conditions and provides accurate prediction of the dynamic behavior of the original measured data.