• 동력기계공학회지
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• 제4권4호
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• pp.41-47
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• 2000

Fatigue crack propagation rate and threshold characteristics of the SA516/70 steel which is used for the low temperature pressure vessels, were studied in the room temperature of $25^{\circ}C$ and low temperature ranges of $-10^{\circ}C,\;-30^{\circ}C,\;-60^{\circ}C\;and\;-80^{\circ}C$ with stress ratio of R=0.1. In the logarithmic relationship between the fatigue crack propagation rate($d{\alpha}/dN$) and stress intensity factor range ${\Delta}K$, the linear relationship was obtained up to $d{\alpha}/dN=4.425{\times}10^4mm/cycle$ in the same of room temperature, but in low temperature case, the relationship was extended to the range of low crack propagation rate. The fractured specimens were examined by SEM. Tested results showed that specimen failed at low temperature exhibit the quasi-cleavage fracture formation however considerable ductility proceed final fracture.

• Journal of the Optical Society of Korea
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• 제6권3호
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• pp.59-71
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• 2002

Photonic band gap structures have a high potential for nearly zero-threshold lasers. This paper describes new-types of low-threshold photonic crystal lasers fabricated in InGaAsP slab waveguides free-standing in air. Two-types of photonic crystal lasers are studied. One is a single-cell nano-cavity laser formed in a square array of air holes. This photonic band gap laser operates in the smallest possible whispering gallery mode with a theoretical Q >30000 and exhibits low threshold pump power of 0.8 mW at room temperature. The nther laser does not have any cavity structure and the lasing operation originates from the enhanced optical density of states near photonic band edges. A very low threshold of 35 $\mu$W (incident pump power) is achieved from this laser at 80 K, one of the lowest values ever reported. This low threshold is benefited from low optical losses as well as enhanced material gain at low temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.864-867
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• 2003

Since the development of semiconductors, various related research has been conducted. During research, silicon diodes have been commonly used because of their simplicity and low cost in the manufacturing process. This research deals with p-n junction threshold voltages from silicon diodes due to transport current at a cryogenic temperature. At a cryogenic temperature(77K) we could get minimum current which junction threshold voltage becomes constant. This is experimented on GPIB communication and it consist of programmable current source, multimeter which gauge the threshold voltage in a very low temperature caused by transport current from 5nA to 1mA and $LN_2$(77K) for coolant. This experiment is programmed all process using Measurement studio(Lab window) tool.

• 한국해양공학회지
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• 제14권3호
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• pp.78-83
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• 2000

In this study, CT specimens were prepared from AST SA516 Gr. 70 which was used for pressure vessel plates for room and low temperature service. And we got the following characteristics from fatigue crack growth test carried out in the environment of room and low temperature at 25$^{\circ}C $, -60$^{\circ}C $, -80$^{\circ}C $ and -100$^{\circ}C $ and in the range of stress ratio of 0.05, 0.3 by means of opening mode displacement. At the constant stress ratio, the threshold stress intensity factor range ${\delta} K_{th}$ in the early stage of fatigue crack growth (Region I) and stress intensity factor range $\delta $K in the stable of fatigue crack growth (Region II) were increased in proportion to descending temperature. It was assumed that the fatigue resistance characteristics and fracture strength at low temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region. The straight line slope relation of logarithm da/dN -$\delta $K in Region II, that is, the fatigue crack growth exponent m increased with descending temperature at the constant stress ratio. It was assumed that the fatigue crack growth rate da/dN is rapid in proportion to descending temperature in Region II and the cryogenic-brittleness greatly affect a material with decreasing temperature.

• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2001년도 춘계학술대회 논문집
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• pp.326-331
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• 2001

In this study. CT specimens were prepared from ASME SA5l6 which was used for pressure vessel plates for room and low temperature service. And we got the following characteristics from fatigue crack growth test carried out in the environment of room and low temperature at $25^{\circ}C$, -3$0^{\circ}C$, -6$0^{\circ}C$, -8$0^{\circ}C$, -10$0^{\circ}C$ and -12$0^{\circ}C$ in the range of stress ratio of 0.1 by means of opening mode displacement. At the constant stress ratio, the threshold stress intensity factor range ΔKsub/th/ in the early stage of fatigue crack growth ( Region I) and stress intensity factor range ΔK in the stable of fatigue crack growth ( Region II) was increased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region. The straight line slope relation of logarithm da.dN -ΔK in RegionII, that is, the fatigue crack growth exponent m increased with descending temperature at the constant stress ratio. It assumed that the fatigue crack growth rate da/dN is rapid in proportion to descend temperature in Region II and the cryogenic-brittleness greatly affect a material with decreasing temperature.

• 대한전기학회논문지:전력기술부문A
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• 제50권9호
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• pp.399-399
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• 2001

This paper proposes TAR(Threshold Autoregressive) model for short-term load forecasting including temperature variable. In the scatter diagram of daily peak load versus daily high or low temperature, we can find out that the load-temperature relationship has a negative slope in the lower regime and a positive slope in the upper regime due to the heating and cooling load, respectively. TAR model is adequate for analyzing these phenomena since TAR model is a piecewise linear autoregressive model. In this paper, we estimated and forecasted one day-ahead daily peak load by applying TAR model using this load-temperature characteristic in these regimes. The results are compared with those of linear and quadratic regression models.

• 대한전기학회논문지:전력기술부문A
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• 제50권9호
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• pp.309-405
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• 2001

This paper proposes TAR(Threshold Autoregressive) model for short-term load forecasting including temperature variable. In the scatter diagram of daily peak load versus daily high or low temperature, we can find out that the load-temperature relationship has a negative slope in the lower regime and a positive slope in the upper regime due to the heating and cooling load, respectively. TAR model is adequate for analyzing these phenomena since TAR model is a piecewise linear autoregressive model. In this paper, we estimated and forecasted one day-ahead daily peak load by applying TAR model using this load-temperature characteristic in these regimes. The results are compared with those of linear and quadratic regression models.

• 자원ㆍ환경경제연구
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• 제13권3호
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• pp.417-440
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• 2004

미국의 PJM(Pennsylvania-New Jersey-Maryland) 전기도매시장의 전기 가격을 가변 전환확률 국면전환모형(regime switching model with time-varying transition probability model)을 이용해서 추정해보았다. 전기수요뿐만 아니라 기온을 전환확률 방정식의 설명변수로 포함시킴으로써 전기가격이 낮은 국면에서 높은 국면으로 전환할 확률의 문턱점(threshold) 효과가 뚜렷이 향상되었다. 따라서 도매전기가격의 스파이크(spike) 발생을 예측할 수 있게 되는 것이다. 이는 또한 미국의 도매시장 전기가격의 스파이크는 기온에 의해서도 잘 설명되며, 이를 이용하여 날씨관련 파생상품이나 계약을 통해서 도매전기 구입비용의 위험을 해지할 수 있다는 것을 의미한다.

• 전기의세계
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• 제22권2호
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• pp.45-50
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• 1973

Amorphous semiconducting diodes from As Te Ge systm of which resitivity are 10$^{6}$ -10$^{8}$ .ohm.-cm order, are made and they exhibited several conducting states. A high conductivity, low conductivity and memory state are reported. Temperature dependency of the specimens are widerange. According to the procedure and cooling method, specimens are made easily or not. Threshold voltage of switching and memory diodes is in proportional to compositonal quantity of Arsenic. Threshold voltage is changed widely according to ambient temperature. Threshold voltage of #132 is 620V at 25.deg. C, 70V at 100.deg. C.

• 반도체디스플레이기술학회지
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• 제19권4호
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• pp.88-93
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• 2020

Based on the capture-emission energy (CEE) maps of CMOS devices, a physics-informed machine learning model for the bias temperature instability (BTI)-induced threshold voltage shifts and low frequency noise is presented. In order to incorporate physics theories into the machine learning model, the integration of artificial neural network (IANN) is employed for the computation of the threshold voltage shifts and low frequency noise. The model combines the computational efficiency of IANN with the optimal estimation of Gaussian mixture model (GMM) with soft clustering. It enables full lifetime prediction of BTI under various stress and recovery conditions and provides accurate prediction of the dynamic behavior of the original measured data.