• Journal of Institute of Control, Robotics and Systems
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• v.21 no.2
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• pp.162-167
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• 2015

In this paper, we propose a F-MBE algorithm for Dual mode seeker (CCD and IIR). The MBE algorithm show improved performance at the IIR target size estimation. but the MBE can't use at Dual Mode seeker. To overcome this problem,, we apply template matching method for CCD target size information. The performance of proposed F-MBE method is tested at target intercept scenario of dual mode seeker equipped missile. The experiment results show that the proposed algorithm has the relatively improved performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Proceedings of the Acoustical Society of Korea Conference
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• 1992.06a
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• pp.43-48
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• 1992

In the area of speech vocoder systems, the MBE vocoder allows the high quality and low bit rate. In the MBE parameters detection, the dicision methods of V/UV region proposed until now are dependent highly to the other parameters, fundamental frequency and formant information. In this paper, thus, we propose a new V/UV detection method that uses a zero-crossing rate of flatten harmonices spectrum. This method can reduce the influences of the other parameters for the V/UV regions detection.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.38 no.5
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• pp.576-582
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• 2001

The Multi-Band Excitation(MBE) speech coder uses a different approach for the representation of the excitation signal. It replaces the frame-based single voiced/unvoiced classification of a classical speech coder with a set of such decision over harmonic intervals in the frequency domain. This enables each speech segment to be a mixture of voiced and unvoiced, and improves the synthetic speech quality by reducing decision errors that might occur on the frame-based single voiced and unvoiced decision process when input speech is degraded with noise. The IMBE-LP, improved version of MBE with linear prediction, represents the spectral information of MBE model with linear prediction coefficients to obtain low bit rate of 2.4 kbps. In this Paper, we proposed a variable rate IMBE-LP vocoder that has lower bit rate than IMBE-LP without degrading the synthetic speech quality. To determine the LP order, it uses the spectral band information of the MBE model that has something to do with he input speech's characteristics. Experimental results are riven with our findings and discussions.

• Journal of the Korean Society of Food Science and Nutrition
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• v.43 no.4
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• pp.498-506
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• 2014

The objective of this study was to investigate the beneficial effects of mulberry extract (MBE) on blood flow improvement. The $SC_{50}$ value for the DPPH radical scavenging activity of MBE was $89.36{\pm}5.46{\mu}g/mL$. Analysis of the cellular toxicity of MBE on RAW 264.7 and HepG2 cells showed no toxicity under a concentration of 2,500 ${\mu}g/mL$. We found that MBE inhibited the enzyme activity of cyclooxygenase (COX)-2 as well as oxidation of human LDL. Western blotting analysis showed that MBE inhibited protein expression of COX-2 and 5-lipoxygenase in RAW 264.7 cells. In addition, MBE inhibited protein expression of intercellular adhesion molecule-1 and vascular cell adhesion molecule-1 in human umbilical vein endothelial cells. Furthermore, MBE reduced the serum levels of total cholesterol and C-reactive protein in a concentration-dependent manner. These results both in vitro and in vivo suggest that MBE can be employed for the improvement of blood flow.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.1
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• pp.46-50
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• 1990

Heteroface AlGaAs/GaAs drift solar cells with an active area conversion efficiency of 15.9% under one sun and AM 1.5 condition have been grown by molecular beam epitaxy(MBE). These drift solar cells have graded doping profiles in the base and emitter regions. The cells have a short circuit current density (Jsc) of 19.00 mA/cm\ulcorner an open circuit voltage(Voc) of 0.93 V, and f fill factor(FF) of 0.78, respectively. Conventional solar cells with fixed doping profiles were also grown by MBE for comparison with the drift solar cells. Even though the fabrication cost of MBE grown solar cell is higher, the expected highest conversion efficiency of the single or multiple cells could compensate for the increased cost, particularly in case of space applications.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.204-206
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• 1990

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.82-82
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• 1997

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.159-159
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• 2000

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.441-442
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• 2000