• Title/Summary/Keyword: MFMISFET

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Rapid Grain Growth of $SrBi_2Nb_2O_9$ Thin Films for Improving Programming Characteristics of Ferroelectric Gate Field Effect Transistor (강유전체게이트 전계효과 트랜지스터의 정보저장특성 향상을 위한 $SrBi_2Nb_2O_9$ 박막의 급속 결정성장방법)

  • Lee, Chang-Woo
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.4 s.37
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    • pp.339-343
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    • 2005

  • Pt-$SrBi_2Nb_2O_9(SBN)-Pt-Y_2O_3-Si$ gate field effect transistors (MFMISFETs) have been fabricated and the SBN thin films are rapid thermal annealed in oxygen plasma. The grain size of the SBN becomes 4 times much larger than that of furnace annealed SBN films even at the same annealing temperature of $700^{\circ}C$, remnant polarization value of Pt-SBN-Pt is improved by 2 times. Using the rapid grain growth of SBN for the MFM-ISFET, memory window and programming characteristics of on/off states are fairly well improved.

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