• Journal of the Korean institute of surface engineering
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• v.23 no.2
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• pp.1-10
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• 1990

Metal-Organic Vapor Phase Epitaxy (MOVPE) is an epitaxial process utilizaing ane or more of organometallice as reactnte to grow compound semicond semiconductror layers. MOVPE is basically a cold wall process in which reactants are delivered without reacting with each other to the heated substrate where reactants are thermally decomposed to from compound semiconductors through chemical reaction. Since reactants are delivered as gas phase and the formation of the single crystal compunds depends on the thermal decomposition of the reactants, details of MOVPE relies on the hydrodynamics and pyroltsis and chemical reation of reactants inside on reaction chamber. It has been demonstrated that MOVPE is capable of growing virtually all of the III-V, II-VI and IV-VI compound semiconductrs, fabricating ultrathin epilayers, for ming abrupt hetrointerfaces with monolayer transition width, and is suitable for multi-wafer operation yilding a high throghtput. Overiew of reactror componts and layer, characteristics, and status of MOVPE are discussed.

• Journal of the Korean institute of surface engineering
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• v.24 no.1
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• pp.1-17
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• 1991

Understanding of the detailed reaction mechanisms during MOVPE and ALE is essential to further improve the properties of the grown crystals and the controllability of the growth parameters. The unified models for the detailed reaction paths are not available at this stage. The study, however, has been advanced to the extent that consensus on some of the reaction paths can be drawn from the scattered data. Metalakyls such as TMGa and TMIn seem to nearly fully decompose in the gas phase through homogeneous reaction at the typical MOVPE growth temperature. Hydrides such as AsH3 and PH3, on the contrary. seem to decompose heterogeneously onthe substrate surfaces as well as homogeneously in the gas phase. However, at lower temperatures, where ALE crystals are typically grown, the growth process is strongly dependent on the surface reactions. It seems that steric hindrance effects which the radicals reaching the substrate exhibit on the surface the growth rate a function of the metalalkyle supply durations. In addition, dydrogens released from hydrides seem to play an essential role in removing carbons leberated from the metalalkyls. High growth temperatures also seem to be effective in desorbing carbons from surface. The understanding of the reaction mechanisms was possible though diverse appraaches utilizing many ex-situ and in-situ diagnostic techniques and genuine experimental designs. It is the purpose of this paper to review and discuss many of these efforts and to draw some possible conclusions from them.

• Journal of the Korean institute of surface engineering
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• v.24 no.1
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• pp.1.1-1.1
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• 1991

Understanding of the detailed reaction mechanisms during MOVPE and ALE is essential to further improve the properties of the grown crystals and the controllability of the growth parameters. The unified models for the detailed reaction paths are not available at this stage. The study, however, has been advanced to the extent that consensus on some of the reaction paths can be drawn from the scattered data. Metalakyls such as TMGa and TMIn seem to nearly fully decompose in the gas phase through homogeneous reaction at the typical MOVPE growth temperature. Hydrides such as AsH3 and PH3, on the contrary. seem to decompose heterogeneously onthe substrate surfaces as well as homogeneously in the gas phase. However, at lower temperatures, where ALE crystals are typically grown, the growth process is strongly dependent on the surface reactions. It seems that steric hindrance effects which the radicals reaching the substrate exhibit on the surface the growth rate a function of the metalalkyle supply durations. In addition, dydrogens released from hydrides seem to play an essential role in removing carbons leberated from the metalalkyls. High growth temperatures also seem to be effective in desorbing carbons from surface. The understanding of the reaction mechanisms was possible though diverse appraaches utilizing many ex-situ and in-situ diagnostic techniques and genuine experimental designs. It is the purpose of this paper to review and discuss many of these efforts and to draw some possible conclusions from them.

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.112-116
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.72-73
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• 1996

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.282-288
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• 2003

We report the growth of HgCdTe by metal organic vapor phase epitaxy (MOVPE), using (211)B CdTe/Si substrates grown by molecular beam epitaxy (MBE). The surface morphology of these films is very smooth with hillock free. The etch pit densities (EPD) and full widths at half maximum (FWHM) of x-ray rocking curves exhibited that the crystalline quality of HgCdTe epilayer on MBE grown CdTe/Si was improved compare to HgCdTe on GaAs substrate. The Hall parameters of undoped HgCdTe layers on CdTe/Si showed n-type behavior with carrier concentration of $8{\times}10^{14}/cm^3$ at 77K. But HgCdTe on GaAs showed p-type conductivity due to in corporation of p-type impurities during GaAs substrate preparation. It is thought that these results are applicable for large area HgCdTe forcal plane arrays of $1024{\times}1024$ format and beyound.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.95-96
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• 1993

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.96-97
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• 1994

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.775-778
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• 2011

TBP (tertiarybutylphosphine), a relatively new material for phosphorus, has been studied with EDMIn (ethyldimethylindium) as an indium source for the growth of InP by MOVPE (metalorganic vapor phase epitaxy). Mirror smooth and good crystalline InP layers were obtained at $500-600^{\circ}C$ with the TBP/EDMIn molar ratio as low as 21. The deposited InP layers are all n-type with the electron concentration in the range of (5-10)${\times}10^{16}\;cm^{-3}$, which is a lot higher than those from $PH_3$. This high concentration is due presumably to the high concentration of donor impurities in TBP. And it has been found that the formation of adduct occurs between EDMIn and TBP at room temperature when the partial pressure of EDMIn in the reactant mixture is above $1{\times}10^{-2}$ Torr. The high concentration of impurities in TBP and the adduct formation between EDMIn and TBP are major obstacles in replacing $PH_3$ and TMIn for the growth of device quality InP layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.207-210
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• 2001

Metal-organic VPE (MOVPE) epitaxial growth procedure and related device fabrication technique are reported for GaInP-based epitaxial materials and devices. For GaInP/GaInAs two-dimensional electron-gas field-effect transistor (TEGFET), a promising epitaxial stacking structure resulting in enhanced electron mobility is given. In conjunction with this, a new device fabrication technique to improve luminous intensity of GaInP-based LED is also shown.