• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.66-67
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• 2002

Magnetic tunnel junction에서는 spin의 tunneling이 가장 기본적인 현상이기 때문에 tunnel junction의 특성은 tunnel barrier의 성질에 크게 의존한다. Tunnel barrier로는 지금까지 $Al_2$O$_3$가 주로 사용되고 있다. 하지만 $Al_2$O$_3$의 경우는 barrier height가 2-3 eV로 높기 때문에 저 저항의 tunnel junction을 형성하기 위해서는 Al의 두께가 1nm 이하로 낮아져야 한다. 따라서 이를 극복하기 위해서 $Al_2$O$_3$ 보다 낮은 barrier height를 갖는 절연막을 tunnel barrier로 사용하고자 하는 연구가 많이 진행되고 있다 (예를 들면 TaOx [1], ZrOx [2], GaOx [3], and HfOx [4]). (중략)

• Journal of Magnetics
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• v.15 no.3
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• pp.116-122
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• 2010

An accurate analytical equation for the total energy in the framework of the single domain model is used to study the thermal stability of nanostructured synthetic ferrimagnets. Elliptical cells are considered that have lateral dimensions of 160 nm (long axis)$\times$80 nm (short axis) and varying values of thickness asymmetry for the two magnetic layers. The direction of the applied magnetic field, which points to the $45^{\circ}$ direction, is in the opposite direction to the thicker layer magnetization. A significant difference is observed in the applied magnetic field dependencies of the equilibrium magnetic configuration and the magnetic energy barrier when using the simplifying assumption that the self-demagnetizing field is identical in magnitude to the dipole field. At a small thickness asymmetry of 0.2 nm, for example, the magnetic energy barrier is reduced from 68 kT (T=300 K) to 6 kT at the remanent state and a progressive switching behavior changes into a critical behavior, as the simplifying assumption is used. The present results clearly demonstrate the need for an accurate analytical equation for the total energy in predicting the thermal stability of nanostructured synthetic ferrimagnets.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.133-136
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• 2005

In the case of contacts between semiconductor and metal in semiconductor devices, they tend to be unstable because of thermal budget. To prevent these problems we deposited W-C-N diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of the barrier is $1,000{\AA}$ and the pressure is 3 mTorr during the deposition. In this work we coated LSMO (CMR material) on W-C-N diffusion barrier and then we studied the interface effects between LSMO layer and W-C-N diffusion barrier. We got results that the magnetic characteristics of LSMO thin film are still maintained after annealing at $800^{\circ}C$ for 3 hr because W-C-N thin diffusion barrier was prevented the diffusion of oxygen between LSMO and Si substrate.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.128-133
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• 2014

We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

• Journal of Magnetics
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• v.10 no.4
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• pp.137-141
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• 2005

We confirmed that the improvement in properties of magnetic tunnel junctions prepared by radical oxidation after thermal treatment was mostly resulted from the redistribution of oxygen at the $AIOx/Co_{90}Fe_{10}$ interface. The as-deposited Al oxide barrier was oxygen-deficient but most of it re-oxidized into $Al_2O_3$, the thermodynamically stable stoichiometric phase, through thermal treatment. As a result, the effective barrier height was increased from 1.52 eV to 2.27 eV. On the other hand, the effective barrier width was decreased from 8.2 ${\AA}$ to 7.5 ${\AA}$. X-ray absorption spectra of Fe and Co clearly showed that the oxygen in the CoFe layer diffused back into the Al barrier and thereby enriched the barrier to close to a stoichiometirc $Al_2O_3$ phase. The oxygen bonded with Co and Fe diffused back by 6.8 ${\AA}$ and 4.5 ${\AA}$ after thermal treatment, respectively. Our results confirm that controlling the chemical structures of the interface is important to improve the properties of magnetic tunnel junctions.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.233-238
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• 2003

Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.

• Journal of Korean Neurosurgical Society
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• v.66 no.2
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• pp.172-182
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• 2023

Objective : The blood-brain barrier (BBB) is an obstacle for molecules to pass through from blood to the brain. Focused ultrasound is a new method which temporarily opens the BBB, which makes pharmaceutical delivery or removal of neurodegenerative proteins possible. This study was demonstrated to review our BBB opening procedure with magnetic resonance guided images and find specific patterns in the BBB opening. Methods : In this study, we reviewed the procedures and results of two clinical studies on BBB opening using focused ultrasound regarding its safety and clinical efficacy. Magnetic resonance images were also reviewed to discover any specific findings. Results : Two clinical trials showed clinical benefits. All clinical trials demonstrated safe BBB opening, with no specific side effects. Magnetic resonance imaging showed temporary T1 contrast enhancement in the sonication area, verifying the BBB opening. Several low-signal intensity spots were observed in the T2 susceptibility-weighted angiography images, which were also reversible and temporary. Although these spots can be considered as microbleeding, evidence suggests these are not ordinary microbleeding but an indicator for adequate BBB opening. Conclusion : Magnetic resonance images proved safe and efficient BBB opening in humans, using focused ultrasound.

• Journal of Magnetics
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• v.18 no.2
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• pp.111-116
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• 2013

This paper presents a characteristic analysis method of a permanent magnet type transverse flux linear motor (TFLM) with spiral cores. The spiral cores are used as the mover cores in order to make 3-dimensional (3-D) magnetic flux paths at the TFLM which have 3-D magnetic flux flows. The 3-D Equivalent Magnetic Circuit Network Method is used to analyse the magnetic characteristics of the machine, and an imaginary part, 'flux barrier,' is introduced to consider the spiral core characteristic. Magnetic parameters such as flux, inductance, and thrust are calculated from the analysis results. The computed thrust forces are compared to measured values to confirm the accuracy of the analysis.

• Proceedings of the Korean Magnestics Society Conference
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• 2014.05a
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• pp.120-121
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• 2014

We investigate the field-dependence of energy barrier for various cell diameters and two type of geometry through the NEB method. We find that the energy barrier can depend strongly on the cell size when the switching is governed by the domain wall motion. Moreover we also examine the cell size dependence of energy barrier for two type of cell geometry. In the presentation, we will discuss the effect of domain wall formation and more various cell size on the energy barrier in detail.

• Journal of Magnetics
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• v.7 no.3
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• pp.63-71
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• 2002

Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.