• Transactions of Materials Processing
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• v.22 no.2
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• pp.74-79
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• 2013

The ultra-precision polishing method using MR fluid has come into the spotlight for polishing metals and optical materials. The MR fluid jet polishing process can be controlled using a change of viscosity by an imposed magnetic field. The MR fluid used for polishing process is a mixture of CI particles, DI water, $Na_2CO_3$ and glycerin. The efficiency of polishing depends on parameters such as polishing time, magnetic field, stand-off distance, pressure, etc. In this paper, the MR fluid jet polishing was used to polish nickel and brass mold materials, which is used to fabricate backlight units for 3-D optical devices in mobile display industries. In MR jet polishing, ferromagnetic materials like nickel can decrease the polishing efficiency by interaction with the cohesiveness of the MR fluid more than non-ferromagnetic materials like copper. A series of tests with different polishing times showed that the surface roughness of brass (Ra=1.84 nm) was lower than that of nickel (Ra=2.31 nm) after polishing for 20 minutes.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.3
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• pp.184-191
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• 2000

Properties of pad are investigated to find the relationship between the chemical mechanical polishing(CMP) results, such as material removal rate and within wafer non-uniformity(WIWNU), and its properties. Polishing pressure is considered as important factors to affect the results, so behavior of ordinary polymer is studied to define the polishing result affecting properties of pad. Experimental setup is devised to identify the behavior of pad and several different pads are used in chemical mechanical polishing experiments to verify the correlations between pad properties and polishing results. The results indicate that the viscoelastic properties of pad had relationships with the polishing results, and shows correlation between suggested properties of pad and polishing result.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.435-437
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• 2002

Polishing of copper, a process called copper chemical mechanical polishing, is a critical, intermediate step in the planarization of silicon wafers. During polishing, the electrodeposited copper films are removed by slurries: and the differential polishing rates between copper and the surrounding silicon dioxide leads to a greater removal of the copper. The differential polishing develops dimples and furrows; and the process is called dishing and erosion. In this work, we present the results of experiments on dishing and erosion of copper-CMP, using patterned silicon wafers. Results are analyzed for the pattern factors and properties of the copper layers. Three types of pads - plain, perforated, and grooved - were used for polishing. The effect of slurry chemistries and pad soaking is also reported.

• International Journal of Precision Engineering and Manufacturing
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• v.3 no.4
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• pp.43-53
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• 2002

Polishing a die that has free-form surfaces is a time-consuming and tedious job, and requires a considerable amount of high-precision skill. In order to reduce the polishing time and cope with the shortage of skilled workers, a user-friendly automatic polishing system was developed. The polishing system is composed of two subsystems, a three-axis machining center and a two-axis polishing robot. The system has five degrees of freedom and is able to keep the polishing tool in a position normal to the die surface during operation. A sliding mode control algorithm with velocity compensation was proposed to reduce tracking errors. Trajectory tracking experiments showed that the tracking error can be reduced prominently by the proposed sliding mode control compared to a PD (proportional derivative) control. To evaluate the polishing performance of the polishing system and to and the optimal polishing conditions, the polishing experiments were conducted.

• Design & Manufacturing
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• v.13 no.1
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• pp.13-18
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• 2019

The size and prospects of the domestic semiconductor equipment market are increasing every year. In the case of various parts used inside semiconductor equipments, high durability such as high strength and abrasion resistance is demanded. Particularly, the gases used in semiconductor production processes are toxic. In order to prevent such toxic gas leakage, a precision processing technique and a surface treatment technique for preventing corrosion are required. Electro-polishing is an electro-chemical method of polishing a metal surface to make it smooth and polished. Electro-polishing is mainly used in the finishing process of metal surface. Unlike mechanical polishing, electro-polishing is used in many fields, such as fine chemical etching equipment, since no damaged layer or burr, fine polishing groove and particles are generated. However, in order to withstand the gas used in the semiconductor equipment, the parts must have high corrosion resistance. However, the surface hardness generally become lowered through electro-polishing. Therefore, in this study, surface hardness were experimentally observed before and after electro-polishing. Then, a method of improving hardness by preparing a nitrided layer by plasma ion nitriding treatment.

• Tribology and Lubricants
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• v.38 no.1
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• pp.1-7
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• 2022

Chemical-mechanical polishing (CMP) process is a semiconductor process that planarizes a wafer surface using mechanical friction between a polishing pad and a substrate surface during a specific chemical reaction. During the CMP process, polishing pad conditioning is applied to prevent the rapid degradation of the polishing quality caused by polishing pad glazing through repeated material removal processes. However, during the conditioning process, uneven wear on the polishing pad is inevitable because the disk on which diamond particles are electrodeposited is used. Therefore, the abrasion of the polishing pad should be considered not only for the variables during the conditioning process but also when designing the CMP conditioning system. In this study, three design variables of the conditioning system were analyzed, and the effect on the pad wear profile during conditioning was investigated. The three design variables considered in this study were the length of the conditioner arm, diameter of the conditioner disk, and distance between centers. The Taguchi method was used for the experimental design. The effect of the three design variables on pad wear and uniformity was assessed, and new variables used in conditioning system design were proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.485-485
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• 2009

Double side polishing process has been used for various industrial applications, such as polishing of semiconductor substrates and flat panel display glasses. In wafer manufacturing, double side polishing process is applied to improve wafer flatness and to minimize particle generation from wafers in device manufacturing processes, which is recognized as one of the most important processes. Whereas the kinematical modeling and analysis results of single side polishing, extensively used for chemical-mechanical polishing (CMP) in device manufacturing, are well investigated, the studies in conjunction with double side polishing are barely carried out, due to the complication of polishing system and the uncertainty of wafer motion in the carrier. This paper suggests the derivation of kinematical model with consideration of carrier and wafer motion in double side polishing, and then presents the effect of kinematical parameters on material removal amount and its non-uniformity. The kinematical analysis results help to understand the double side polishing process and to control the polishing results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.651-652
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• 2005

Chemical mechanical polishing (CMP) has emerged as the planarization technique of choice in integrated circuit manufacturing. Especially, polishing pad is considered as one of the most important consumables because of its properties. Generally, conventional polishing pad has irregular pores and asperities. If conditioning process is except from whole polishing process, smoothing of asperities and pore glazing occur on the surface of the pad, so repeatability of polishing performances cannot be expected. In this paper, CMP pad with microstructure was made using micro-molding technology and repeatability of ILD(interlayer dielectric) CMP performances and was evaluated.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.134-140
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• 2002

Chemical mechanical polishing of aluminum and photoresist using colloidal silica-based slurry was experimented. The effects of slurry pH, silica concentration, and oxidizer ($H_2O_2$) concentration on surface roughness and removal rate were studied. The optimum slurry conditions for reduction of micro-scratch were investigated. The optimum chemical mechanical polishing with the colloidal silica-based slurry was compared with conventional chemical mechanical polishing with alumina-based slurry. Chemical mechanical polishing of the aluminum with the colloidal silica-based slurry showed improved result but chemical mechanical polishing of the photoresist did not. The improved result was comparative with that of chemical mechanical polishing with filtered alumina-based slurry which one of desirable methods to reduce the micro-scratch.

• International Journal of Precision Engineering and Manufacturing
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• v.5 no.3
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• pp.69-76
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• 2004

Polishing a die that has free-form surfaces is a time-consuming and tedious job, and requires a considerable amount of high-precision skill. In order to reduce the polishing time and cope with the shortage of skilled workers, an automatic polishing robot system was developed. The polishing robot system is composed of two subsystems, a three-axis machining center and a two-axis polishing head. The machining center is controlled by a FANUC controller, and the polishing head by DSP controller. The system has five degrees of freedom and is able to keep the polishing tool normal to the die surface during operation. To easily operate the developed polishing robot system, this study developed an integrated operating program in the Windows environment. The program consists of five modules: a polishing data generation module, a code separation module, a polishing module, a graphic simulator module, and a teaching module. Also, the automatic teaching system was developed to easily obtain teaching data and it consists of a three dimensional joystick and a proximity sensor. Also, to evaluate the performance of the integrated operating program and the polishing robot system, polishing experiments of a die of shadow mask were carried out.