• Title/Summary/Keyword: Medici

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Analysis of Electrical Characteristics of Silicon Solar cell according to the ARC thickness using Medici Program (메디치 프로그램을 이용한 실리콘 솔라셀의 ARC 두께에 따른 전기적 특성 해석)

  • Kim, Jae-Gyu;Kim, Ji-Man;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.10
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    • pp.3853-3858
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    • 2010
  • This paper shows electrical analysis of the silicon solar cell according to the various ARC thickness using Medici program. we built a mesh structure of the solar cell that use ARC consisting of ITO(Indium-Tin-Oxide) transparent electrode, for the Medici modeling. About various oxide layer thickness of the ARC for 30 nm, 60 nm, 90 nm, changes of the I-V curve, Isc, Voc, transmittance and external collection efficiency performed according to wavelength of Incident ray. Simulation results show maximum power 22 mW/$cm^2$, fill factor 0.83 in condition of 60 nm ITO thickness.

Photo Diode and Pixel Modeling for CMOS Image Sensor SPICE Circuit Analysis (CMOS 이미지센서 SPICE 회로 해석을 위한 포토다이오드 및 픽셀 모델링)

  • Kim, Ji-Man;Jung, Jin-Woo;Kwon, Bo-Min;Park, Ju-Hong;Park, Yong-Su;Lee, Je-Won;Song, Han-Jung
    • 전자공학회논문지 IE
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    • v.46 no.4
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    • pp.8-15
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    • 2009
  • In this paper, we are indicated CMOS Image sensor circuit SPICE analysis for the Photo Diode and pixel Modeling. We get a characteristic of the photoelectric current using a device simulator Medici and develop the Photodiode model for applying a SPICE simulation. For verifying the result, We compared the result of SPICE simulation with the result of mixed mode simulation about the testing circuit structure consisted photodiode and NMOS.

A discretization method of the three dimensional heat flow equation with excellent convergence characteristics (우수한 수렴특성을 갖는 3차원 열흐름 방정식의 이산화 방법)

  • Lee, Eun-Gu;Yun, Hyun-Min;Kim, Cheol-Seong
    • Journal of IKEEE
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    • v.6 no.2 s.11
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    • pp.136-145
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    • 2002
  • The simulator for the analysis of the lattice temperature under the steady-state condition is developed. The heat flow equation using the Slotboom variables is discretized and the integration method of the thermal conductivity without using the numerical analysis method is presented. The simulations are executed on the $N^+P$ junction diode and BJT to verify the proposed method. The average relative error of the lattice temperature of $N^+P$ diode compared with DAVINCI is 2% when 1.4[V] forward bias is applied and the average relative error of the lattice temperature of BJT compared with MEDICI is 3% when 5.0[V] is applied to the collector contact and 0.5[V] is applied to the base contact. BANDIS using the proposed method of integration of thermal conductivity needs 3.45 times of matrix solution to solve one bias step and DAVINCI needs 5.1 times of matrix solution MEDICI needs 4.3 times of matrix solution.

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A Numerical Analysis of the Heat Flow Equation using the Finite Element Method (유한요소법을 이용한 열흐름 방정식의 수치해석)

  • 이은구;김태한;김철성;강성수;이동렬
    • Proceedings of the IEEK Conference
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    • 2001.06b
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    • pp.161-164
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    • 2001
  • 정상상태에서 소자 내부의 격자온도 분포를 해석할 수 있는 시뮬레이터를 제작하였다. Slotboom 변수를 사용하여 열흐름 방정식을 이산화하였다. 또한 격자온도 분포를 고려한 초기 해의 설정 방법을 제안하였다. 제안된 방법의 타당성을 검증하기 위하여 N/sup + P 정합 다이오드에 대해 모의실험을 수행하여 MEDICI의 결과와 비교하였다 순방향 전압-전류 특성은 MEDICI의 결과와 비교하여 7% 이내의 최대 상대오차를 보였고 전위 분포와 온도 분포는 각각 2%, 2% 이내의 최대 상대오차를 보였다. BANDIS에서는 수렴을 위해 평균 3.7회 이하의 행렬 연산이 필요하였으며, MEDICI에서는 평균 5.1회 이하의 행렬 연산이 필요하였다.

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A Study on the Florence Renaissance and the Medici's Libraries (피렌체 르네상스와 메디치가 도서관 연구)

  • Yoon, Hee-Yoon
    • Journal of Korean Library and Information Science Society
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    • v.53 no.3
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    • pp.73-94
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    • 2022
  • Florence is the cradle of the Italian Renaissance. It is the result of a combination of medieval humanists' exploration of ancient Greek and Roman knowledge and culture, the leadership of great monarchs and priests, patronage of the Medici family, etc., free-thinking and creativity of artists, and critical consciousness and cultural needs of citizens. However, the Florentine Renaissance could not have blossomed unless the Medici family had collected ancient manuscripts and translations, and built libraries to preserve and provide literature. Based on this logical basis, this study outlined the Florentine renaissance and historic libraries, analyzed the collection and composition of favorite books of the Medici family, and traced the architectural characteristics and metaphors of the Medici libraries, The San Marco Library (Michelozzo Library), Library of Badia Fiesolana, and the San Lorenzo Library (Laurentian Library) were the priming and birthplace of the Florentine Renaissance despite of many difficulties, including earthquake, fire, restoration, transfer, seizure, and closure. In particular, the San Marco Library, which was opened in 1444 based on the financial support of Cosimo de' Medici, Michelozzo's design, and Niccoli's private collections was the first common library in the Renaissance period. And the architectural highlight of the Laurentian Library, which opened in 1571 under the leadership of Giulio (Papa Clemente VII), is Michelangelo's staircase, which symbolizes 'from ignorance to wisdom', and the real value of the content is the ancient manuscripts and early printed books, which were collected by the humanist Niccoli and the Medici family. In short, when discussing the Florentine Renaissance, Medici's collection and historic libraries are very important points. The reason is that the ancient collections were not stuffed products, but syntactic semiotics, and the libraries are telescopes that view the history of human knowledge and culture and microscopes that create knowledge and wisdom. If records dominate memories, libraries accumulate records. Therefore, long breathing and time capsule strategies are also required for the development and preservation of retroactive books in domestic libraries with a relatively long history.

A study on the small signal analysis using the S$^{3}$A method of N-MOSFET (S$^{3}$A 방법에 의한 N-MOSFET의 소신호 해석에 대한 연구)

  • 임웅진;이은구;김철성
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.355-358
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    • 1998
  • 소신호 해석을 위해 사용되는 여러가지 방법을 비교하고 sinusoidal steady state analysis (S/sup 3/A) 방법을 이용해 반도체 소자를 소신호 해석한다. 소신호 행렬의 풀이방법으로 메모리 소비량이 적고 고주파수에서 행렬 연산으로 인한 잡음성분이 저은 전진해법을 사용한다. MEDICI에 의한 모의실험 결과와 비교하여 10GHz 이하의 주파수 영역에서는 비슷하였으나 10GHz~100GHz의 주파수영역에서 MEDICI에 비하여 정확한 결과를 보였다.

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The Study of Implementation of the Hewlett-Packard Mobility Model (Hewlett-Packard 이동도 모델의 구현에 관한 연구)

  • 김중태;이은구;강성수;이동렬;김철성
    • Proceedings of the IEEK Conference
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    • 2001.06b
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    • pp.165-168
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    • 2001
  • 고 전계하에서 수직 및 수평 전계의 영향을 고려할 수 있는 Hewlett-Packard 이동도 모델을 구현하였다. HP 이동도 모델은 BANDIS에 구현되었다. 구현된 HP이동도 모델을 검증하기 위해 N-MOSFET과 P-MOSFET에 대해 모의실험을 수행하여 MEDICI와 비교한 결과, 드레인 전압-드레인 전류는 5% 이내의 최대 상대 오차를 보였고 전위 분포는 5% 이내의 최대 상대오차를 보였다. MEDICI에서는 1회 수렴을 하기위해 평균 4.6회 이하의 행렬 연산이 필요한 반면 BANDIS에서는 평균 4.3회 이하의 행렬 연산이 필요하다.

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A Study on the Reduction of Current Kink Effect in NMOSFET SOI Device (NMOSFET SOI 소자의 Current Kink Effect 감소에 관한 연구)

  • Han, Myoung-Seok;Lee, Chung-Keun;Hong, Shin-Nam
    • Journal of the Korean Institute of Telematics and Electronics T
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    • v.35T no.2
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    • pp.6-12
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    • 1998
  • Thin film SOI(Silicon-on-insulator) device offer unique advantages such as reduction in short channel effects, improvement of subthreshold slope, higher mobility, latch-up free nature, and so on. But these devices exhibit floating-body effet such as current kink which inhibits the proper device operation. In this paper, the SOI NMOSFET with a T-type gate structure is proposed to solve the above problem. To simulate the proposed device with TSUPREM-4, the part of gate oxide was considered to be 30nm thicker than the normal gate oxide. The I-V characteristics were simulated with 2D MEDICI. Since part of gate oxide has different oxide thickness, the gate electric field strength is not same throughout the gate and hence the impact ionization current is reduced. The current kink effect will be reduced as the impact ionization current drop. The reduction of current kink effect for the proposed device structure were shown using MEDICI by the simulation of impact ionization current, I-V characteristics, and hole current distribution.

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A Study on Refresh Time Improvement of DRAM using the MEDICI Simulator (MEDICI 시뮬레이터를 이용한 DRAM의 Refresh 시간 개선에 관한 연구)

  • 이용희;이천희
    • Journal of the Korea Society for Simulation
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    • v.9 no.4
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    • pp.51-58
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    • 2000
  • The control of the data retention time is a main issue for realizing future high density dynamic random access memory. The novel junction process scheme in sub-micron DRAM cell with STI(Shallow Trench Isolation) has been investigated to improve the tail component in the retention time distribution which is of great importance in DRAM characteristics. In this' paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced ${\Delta}Rp$ (projected standard deviation) increase using buffered N-implantation with tilt and 4X(4 times)-rotation that is designed on the basis of the local-field-enhancement model of the tail component. We report an excellent tail improvement of the retention time distribution attributed to the reduction of electric field across the cell junction due to the redistribution of N-concentration which is Intentionally caused by ion Beam Shadowing and Buffering Effect using tilt implantation with 4X-rotation. And also, we suggest the least requirements for adoption of this new implantation scheme and the method to optimize the key parameters such as tilt angle, rotation number, Rp compensation and Nd/Na ratio. We used MEDICI Simulator to confirm the junction device characteristics. And measured the refresh time using the ADVAN Probe tester.

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