• 한국세라믹학회지
• /
• 제11권1호
• /
• pp.3-9
• /
• 1974

The role of added metal oxide in the adherence mechanism of low melting glass to several metal plates such as oxygen free high conducting copper, low carbon steel, chrominum galvanized on copper, and stainless steel was investigated. The metal oxide which added to glass were cupric oxide, ferric oxide, chromic oxide, and stainless steel oxide. The glass to that various metla oxide were added, sealed with several metal plates in the electric furnace at $650^{\circ}C$ for 5 minutes. The results as follows; 1) The interfacial reaction was promoted and strong chemical bonding with glass and metals by which the surface energy was decreased showed excellent sealing by addition of metal oxide. 2) When the interfacial reaction of glass and metals was promoted by addition of metal oxide found out that various adhernece mechanism were related to the sealing. 3) When the amount of metal oxide addition was 3-5% the excellent sealing was achieved.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.65-65
• /
• 2011

We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.

• 공업화학
• /
• 제20권3호
• /
• pp.307-312
• /
• 2009

폴리실록산/금속 복합체 내에서의 금속입자의 분산성에 영향을 파악하기 위하여 금속산화물을 배위결합으로 가지고 있는 불록공중합체 형태의 변성 폴리실록산을 합성하였다. 합성된 폴리실록산과 금속입자와의 복합체 제조를 통하여 금속입자의 고분자상 분산상태를 확인하였으며 그 결과 금속산화물의 도입이 복합체 내 금속입자의 분산성에 영향을 미침을 확인하였다. 입자의 분산성과 변성폴리실록산에 도입된 금속산화물의 양적 관계 해석을 위하여 다양한 몰분율을 가지는 변성폴리실록산을 합성하였으며 복합체를 제조하였으며, 몰분율 변화에 따른 복합체에서의 분산성 향상을 파악하기 위하여 복합체의 전기전도성을 측정하여 그 결과를 percolation threshold 이론에 따라 해석하였다. 그 결과 금속산화물의 도입된 양이 많을수록 전도성의 임계농도가 낮아짐을 확인할 수 있으며 이를 통해 변성실록산 내 금속산화물의 몰분율의 증가가 입자의 분산성에 미치는 영향을 해석하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.270-271
• /
• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
• /
• pp.225-228
• /
• 2002

The adhesion effect between the oxide layer and the metal layer has been studied by RTP anneal. Two types of oxides, BPSG and P-TEOS, were used as a bottom layer under multi-layered metal film. We observe the interface between oxide and metal layer using SEM (scanning electron microscopy), TEM (transmission electron microscopy), AES (auger electron spectroscopy). Adhesion failure was occurred by interfacial reaction between the BPSG oxide and the multi-layered metal film at 650"C RTP anneal. The phosphorus rich layer was observed at interface between BPSG oxide and metal layer by AES and TEM measurements. On the other hand adhesion was a)ways good in the sample used P-TEOS oxide as a bottom layer. We have known that adhesion between BPSG and multi-layered metal film was improved when the sample was annealed below $650^{\circ}C$.TEX>.

• 한국진공학회지
• /
• 제6권1호
• /
• pp.1-8
• /
• 1997

SUS 316 합금의 노출 조건에 따른 오염 과정과 구조를 x-ray photoelectron spectroscopy실험을 통해 보았다. SUS표면에 부착된 오염 물질은 주로 metal-oxide, metal-H-oxide, CO, COH, 그리고 CxHy임을 보았다. 오염 물질의 층별 형성 구조는 $C_xH_y$/CO(COH)/metal-H-oxide/metal-oxide가 SUS합금 위에 있는 형태이다. 오염 과정은 주로 금속 구성물의 산화와 $C_xH_y$의 흡착과정 두 가지에 의해서 이루어지는 것을 볼 수 있 었다. 초고진공 환경에서는, 오염은 주로 산화층 형성에 의한 것으로 노출 시간이 증가함에 따라 산화층의 두께가 계속 증가하였다. 고진공 또는 높은 압력 환경에서는 노출 초기에 대 부분의 산화층이 형성되고, 노출 시간의 증가에 대해서는 주로 $C_xH_y$에 의한 오염이 계속 증 가하였다. 스테인레스 표면 안에 깊이 분포하고 있는 metal-oxide의 농도는 지수형으로 감 소하는 형태의 분포를 가지며 그 두께는 대기 노출된 시료의 경우 광전자의 평균자유행로 규모로 형성되는 것을 보았고, 특히 Fe-oside가 Cr-oxide를 덮고 있는 표면 편석 현상이 보 였다.

• 한국산학기술학회논문지
• /
• 제13권1호
• /
• pp.456-461
• /
• 2012

본 연구에서는 글리세롤과 우레아를 이용하여 글리세롤카보네이트를 합성하는 반응을 진행하였다. ZnO와 Zn-Al 이원계 금속 산화물 촉매를 제조하고, 제조되어진 촉매를 사용하여 글리세롤의 전환율과 글리세롤카보네이트의 수율을 확인하였고, Al의 첨가에 따른 촉매 특성의 분석과 글리세롤카보네이트 합성반응에서의 역할에 대해 확인하였다. 글리세롤카보네이트 합성 반응에서 ZnO를 단독으로 촉매를 사용한 경우보다 Zn-Al 혼합 산화물을 촉매로 사용하여 반응하였을 때, 부반응이 억제되어 전환율 및 수율이 증가함을 확인하였다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2001년도 The 6th International Symposium of East Asian Resources Recycling Technology
• /
• pp.353-356
• /
• 2001

The relation between the flocculation and dispersion of metal oxide powders and the properties of solvents, such as dielectric constant and solubility parameter, was investigated for TiO$_2$, $Al_2$O$_3$and Fe$_2$O$_3$particles. The particle size and median diameter of these metal oxides were measured in many organic solvents, from which the effect of solvents on the flocculation and dispersion of metal oxide powders was considered. The metal oxide powders of TiO$_2$, $Al_2$O$_3$and Fe$_2$O$_3$tend to disperse in a solvent of higher polarity, whereas they are apt to flocculate in a solvent of low dielectric constant, because the Hamaker constant between the particles becomes larger in such a solvent. There we, however, some solvents that do not obey these tendencies. It is possible to evaluate the flocculation and dispersion of these metal oxide powders in many solvents by using numeral balances of Hansen’s three-dimensional solubility parameter (f$_{d}$, f$_{p}$ and f$_{h}$). There exists a solvent giving the optimal dispersion for each metal oxide, and the optimal dispersion point of f$_{d}$, f$_{p}$ and f$_{h}$ is determined by the combination of various metal oxide powders and solvents.nts.nts.nts.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.87-88
• /
• 2012

Metal oxide nanostructures have been applied to various fields such as energy, catalysts and electronics. We have freely designed one and two-dimensional (1 and 2-D) metal (transition metals and lanthanides) oxide nanostructures, characterized them using various techniques including scanning electron microscopy, transmission electron microscopy, X-ray diffraction crystallography, thermogravimetric analysis, FT-IR, UV-visible-NIR absorption, Raman, photoluminescence, X-ray photoelectron spectroscopy, and temperature-programmed thermal desorption (reaction) mass spectrometry. In addition, Ag- and Au-doped metal oxides will be discussed in this talk.

• Transactions on Electrical and Electronic Materials
• /
• 제12권1호
• /
• pp.7-10
• /
• 2011

High voltage (HV) integrated circuits are viable alternatives to discrete circuits in a wide variety of applications. A HV device generally used in these circuits is a lateral double diffused metal oxide semiconductor (LDMOS) transistor. Attempts to model LDMOS devices are complicated by the existence of the lightly doped drain and by the extension of the poly-silicon and the gate oxide. Several physically based investigations of the bias-dependent drift resistance of HV devices have been conducted, but a complete physical model has not been reported. We propose a new technique to model HV devices using both the BSIM3 SPICE model and a bias dependent resistor model (sub-circuit macro model).