• ETRI Journal
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• v.31 no.6
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• pp.778-783
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• 2009

To fabricate uniform and reliable thin gold stripes that provide low-loss optical waveguides, we developed a novel liftoff process placing an additional $SiN_x$ layer under conventional photoresists. By patterning a photoresist and over-etching the $SiN_x$, the photoresist patterns become free-standing structures on a lower-cladding. This leads to uniform metal stripes with good reproducibility and effectively removes parasitic structures on the edge of the metal stripe in the image reversal photolithography process. By applying the newly developed process to polymer-based gold stripe waveguide fabrication, we improved the propagation losses about two times compared with that incurred by the conventional image-reversal process.

• Korean Journal of Optics and Photonics
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• v.17 no.4
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• pp.371-380
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• 2006

We design and fabricate a novel tunable wavelength filter, which utilizes long-range surface plasmon-polaritons excited along nm-thick-metal strips. A gold metal strip, with $\sim$ cm length, 20 nm thickness, and $\sim$ 5$\mu$m width, is embedded in thick thermo-optic Polymer films supported by a silicon wafer. A dielectric Bragg grating structure is Placed on the metal strip, so that transmission signals at telecom wavelength are selected by thermal effect of the thermo-optic polymer. High extinction ratio of 25 dB and total insertion loss of $\sim$25 dB/cm can be measured by single-mode coupling of optical fibers. We also verify that wavelength tuning of the long-range surface plasmon-polariton filters can be achieved by electric current directly applied to the metal-strip waveguides.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.469-474
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• 2004

We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.