• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.267-270
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• 2011

In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.

• Journal of Magnetics
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• v.10 no.2
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• pp.44-47
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• 2005

The oscillatory interlayer exchange coupling (IEC) has been shown in pinned $[CoFe/Pt(t_{pt})/CoFe]/IrMn$ multi-layers with perpendicular anisotropy. The period of oscillation corresponds to about 2 monolayers of Pt. The oscillatory behavior of IEC depending on the nonmagnetic metallic Pt thickness is thought to be related the antiferromagnetic ordering induced by IrMn layer. Oscillatory IEC as function of insulating NiO thickness has been observed in $[Pt/CoFe]_4/NiO(t_{NiO})/[CoFe/Pt]_4$ multilayers. The effect of N (number of bilayer repeats) upon the magnetic property of [Pt/CoFe]N/IrMn is also studied.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1142-1143
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• 2006

Kinik Company pioneered diamond pad conditioners protected by DLC barrier ($DiaShield^{(R)}$ Coating) back in 1999 (Sung & Lin, US Patent 6,368,198). Kink also evaluated Cermet Composite Coating (CCC or $C^3$, patent pending) with a composition that grades from a metallic (e.g. stainless steel) interlayer to a ceramic (e.g. $Al_2O_3$ or SiC) exterior. The metallic interlayer can form metallurgical bond with metallic matrix on the diamond pad conditioner. The ceramic exterior is both wear and corrosion resistant. The gradational design of $C^3$ coating will assure its strong adherence to the substrate because there is no weak boundary between coating and substrate.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.260-260
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• 1999

We compared c-axis tunneling characteristics of small stacked intrinsic Josephson junctions prepared on the surface of pristine, I-, and HgI$_2$-intercalated Bi$_2Sr_2CaCu_2O_{8+x}$ (Bi2212) single crystals. The R(T) curves are almost metallic in I-Bi2212 specimens, but semiconducting in HgI$_2$-Bi2212 ones.· The transition temperatures were 82.0 K, 73.0 K, and 76.8 K for pristine Bi2212, I-Bi2212, and HgI2-Bi2212 specimens, respectively, consistent with p-T$_c$ phase diagram. Current-voltage (IV) characteristics of both kinds of specimens show multiple quasiparticle branches with well developed gap features, indicating Josephson coupling is established between neighboring CuO$_2$ planes. The critical current I$_c$ of I-Bi2212 is almost the same as of that of pristine crystals, but I$_c$ is much reduced in Hgl$_2$-Bi2212. In spite of expanded interlayer distances, the interlayer coupling is not significantly affected in I-Bi2212due to holes generated by iodine atoms. The coupling in HgI$_2$-Bi2212 is, however, weakened due to inertness of HgI$_2$ molecules and the expansion of interlayer distance. Relation between the superconducting transition temperature T$_c$ and the critical current I$_c$ seems to contradict Anderson's interlayer-pair-tunneling theory but agree with a modified version of it.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.1-6
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• 2013

The effects of interlayer formation and thermal treatment on the field-emission properties of carbon nanotubes (CNTs) were investigated. The CNTs were prepared on tungsten (W) micro-tip substrates using the electrophoretic deposition (EPD) method. The interlayers, such as aluminum (Al) and hafnium (Hf) were coated on the W-tips prior to CNT deposition and after the deposition of CNTs all the species were thermally treated at $700^{\circ}C$ for 30 min. The field-emission properties of CNTs were significantly improved by thermal treatment. The threshold electric field for igniting the electron emission was decreased and the emission current was increased. The Raman spectroscopy results indicated that this was attributed mainly to the enhancement of CNTs by thermal treatment. Also, the CNTs deposited on the interlayers showed the remarkably improved results in the long-term emission stability, especially when they were thermally treated. The X-ray photoelectron spectroscopy (XPS) measurement confirmed that this was resulted from the formation of the additional cohesive forces between the CNTs and the underlying interlayers.

• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.130-135
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• 2006

We theoretically demonstrate that the interlayer exchange coupling (IEC) energy can be manipulated by means of an external bias voltage in a $F_1/NM/F_2/S$$(F_1:ferromagnetic,\;NM:nonmagnetic\;metallic,\;F_2:ferromagnetic,\;S:semiconductor\;layers)$ four-layer system. It is well known that the IEC energy between two ferromagnetic layers separated by nanometer thick nonmagnetic layer depends on the spin-dependence of reflectivity to the $F_1/NM/F_2/S$ four-layer system, where the reflectivities at the interface in $NM/F_2$ interface also depends on $F_2/S$ interface due to the multiple reflection of an electron-like optics. Finally, the IEC energy depends on the spin-dependent electron reflectivity not only at the interfaces of $F_1/NM/F_2$, but also at the interface of $F_2/S$. Naturally the Schottky barrier is formed at the interface between metallic ferromagnetic layer and semiconductor, the Schottky barrier height and thickness can be tailored by an external bias voltage, which causes the change of the spin-dependent reflectivity at $F_2/S$ interface. We show that the IEC energy between two ferromagnetic layers can be controlled by an external bias voltage due ti the electron-optics nature using a simple free-electron-like one-dimensional model.

• Nuclear Engineering and Technology
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• v.41 no.1
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• pp.21-38
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• 2009

The use of multi scale modeling concepts and simulation techniques to study the destabilization of an ultrathin layer of oxide interface between a metal substrate and the surrounding environment is considered. Of particular interest are chemo-mechanical behavior of this interface in the context of a molecular-level description of stress corrosion cracking. Motivated by our previous molecular dynamics simulations of unit processes in materials strength and toughness, we examine the challenges of dealing with chemical reactivity on an equal footing with mechanical deformation, (a) understanding electron transfer processes using first-principles methods, (b) modeling cation transport and associated charged defect migration kinetics, and (c) simulation of pit nucleation and intergranular deformation to initiate the breakdown of the oxide interlayer. These problems illustrate a level of multi-scale complexity that would be practically impossible to attack by other means; they also point to a perspective framework that could guide future research in the broad computational science community.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.19-24
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• 2016

Along the few nano sizing dimensions of integrated circuit (IC) devices, acceptable interlayer material for design is inevitable. The interlayer which include dielectric, interconnect, barrier etc. needs to achieve not only electrical properties, but also mechanical properties for endure post manufacture process and prolonging life time. For developing intermetallic dielectric (IMD) the mechanical issues with post manufacturing processes were need to be solved. For analyzing specific structural problem and material properties Raman spectroscopy was performed for various researches in Si semiconductor based materials. As improve of the laser and charge-coupled device (CCD) technology the total effectiveness and reliability was enhanced. For thin film as IMD developed material could be analyzed by Raman spectroscopy, and diverse researches of developing method to analyze thin layer were comprehended. Also In-situ analysis of Raman spectroscopy is introduced for material forming research.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.105-105
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• 2016

Recently, high power impulse magnetron sputtering (HIPIMS) has attracted considerable attentions due to its high potential for industrial applications. By pulsing the sputtering target with high power density and short duration pulses, a high plasma density and high ionization of the sputtered species can be obtained. HIPIMS has exhibited several merits such as increased coating density, good adhesion, microparticle-free and smooth surface, which make the HIPIMS technique desirable for synthesizing hard coatings. However, hard coatings present intrinsic defects (columnar structures, pinholes, pores, discontinuities) which can affect the corrosion behavior, especially when substrates are active alloys like steel or in a wear-corrosion process. Atomic layer deposition (ALD), a CVD derived method with a broad spectrum of applications, has shown great potential for corrosion protection of high-precision metallic parts or systems. In ALD deposition, the growth proceeds through cyclic repetition of self-limiting surface reactions, which leads to the thin films possess high quality, low defect density, uniformity, low-temperature processing and exquisite thickness control. These merits make ALD an ideal candidate for the fabrication of excellent oxide barrier layer which can block the pinhole and other defects left in the coating structure to improve the corrosion protection of hard coatings. In this work, CrN/Al2O3/CrN multilayered coatings were synthesized by a hybrid process of HIPIMS and ALD techniques, aiming to improve the CrN hard coating properties. The influence of the Al2O3 interlayer addition, the thickness and intercalation position of the Al2O3 layer in the coatings on the microstructure, surface roughness, mechanical properties and corrosion behaviors were investigated. The results indicated that the dense Al2O3 interlayer addition by ALD lead to a significant decrease of the average grain size and surface roughness and greatly improved the mechanical properties and corrosion resistance of the CrN coatings. The thickness increase of the Al2O3 layer and intercalation position change to near the coating surface resulted in improved mechanical properties and corrosion resistance. The mechanism can be explained by that the dense Al2O3 interlayer acted as an excellent barrier for dislocation motion and diffusion of the corrosive substance.

• Journal of the Korean Magnetics Society
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• v.18 no.6
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• pp.232-236
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• 2008

Dependence of interlayer exchange coupling on antiferromagnetic IrMn thickness, thermal stability, and parallel anisotropy angle in perpendicular anisotropy [CoFe/Pt/CoFe]/IrMn multilayers was investigated. The magnetic property of [CoFe($10{\AA}$)/Pt($8{\AA}$)/CoFe($10{\AA}$)] induced by antiferromagnetic ordering of IrMn layer was maintained a stable perpendicular anisotropy up to $250^{\circ}C$ and from $7{\AA}$ to $160{\AA}$ of IrMn thickness. The value of interlayer exchange coupling of [CoFe/Pt/CoFe]/IrMn multilayers with perpendicular anisotropy increased to 1.5 times at anisotropy angle of $60^{\circ}$ more than of $0^{\circ}$. On the other side, the interlayer exchange coupling at anisotropy angle of $90^{\circ}$ was $\infty$ Oe, it was likely diverted to a parallel shape magnetization.