• Journal of Powder Materials
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• v.21 no.6
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• pp.460-466
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• 2014

Al-Si-SiC composite powders with intra-granular SiC particles were prepared by a gas atomization process. The composite powders were mixed with Al-Zn-Mg alloy powders as a function of weight percent. Those mixture powders were compacted with the pressure of 700 MPa and then sintered at the temperature of $565-585^{\circ}C$. T6 heat treatment was conducted to increase their mechanical properties by solid-solution precipitates. Each relative density according to the optimized sintering temperature of those powders were determined as 96% at $580^{\circ}C$ for Al-Zn-Mg powders (composition A), 97.9% at $575^{\circ}C$ for Al-Zn-Mg powders with 5 wt.% of Al-Si-SiC powders (composition B), and 98.2% at $570^{\circ}C$ for Al-Zn-Mg powders with 10 wt.% of Al-Si-SiC powders (composition C), respectively. Each hardness, tensile strength, and wear resistance test of those sintered samples was conducted. As the content of Al-Si-SiC powders increased, both hardness and tensile strength were decreased. However, wear resistance was increased by the increase of Al-Si-SiC powders. From these results, it was confirmed that Al-Si-SiC/Al-Zn-Mg composite could be highly densified by the sintering process, and thus the composite could have high wear resistance and tensile strength when the content of Al-Si-SiC composite powders were optimized.

• Progress in Superconductivity
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• v.14 no.1
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• pp.30-33
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• 2012

We have grown $MgB_2$ superconducting thin films on the SiC buffer layers by means of hybrid physical-chemical vapor deposition (HPCVD) technique. Prior to that, SiC was first deposited on $Al_2O_3$ substrates at various temperatures from room temperature to $600^{\circ}C$ by using the pulsed laser deposition (PLD) method in a vacuum atmosphere of ${\sim}10^{-6}$ Torr pressure. All samples showed a high transition temperature of ~40 K. The grain boundaries of $MgB_2$ samples with SiC layer are greater in amount, compare to that of the pure $MgB_2$ samples. $MgB_2$ with SiC buffer layer samples show interesting change in the critical current density ($J_c$) values. Generally, at both 5 K and 20 K measurements, at lower magnetic field, all $MgB_2$ films deposited on SiC buffer layers have low $J_c$ values, but when they reach higher magnetic fields of nearly 3.5 Tesla, $J_c$ values are enhanced. $MgB_2$ film with SiC grown at $600^{\circ}C$ has the highest $J_c$ enhancement at higher magnetic fields, while all SiC buffer layer samples exhibit higher $J_c$ values than that of the pure $MgB_2$ films. A change in the grain boundary morphologies of $MgB_2$ films due to SiC buffer layer seems to be responsible for $J_c$ enhancements at high magnetic fields.

• Journal of the Korean Ceramic Society
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• v.35 no.2
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• pp.129-136
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• 1998

The effects of MgO on the resistance to corrosion and oxidation of Al2O3-SiC-C refractory have been in-vestigated. The resistance to oxidation was improved as the amount of MgO increased. The resistance to corrosion was enhanced until 2 wt% MgO content but degraded over that content. From the dependence of temperatuer on the oxidation resistance oxidation was suppressed by the microstructural densification caused by spinel formation over 1200~130$0^{\circ}C$and the formation MgO-Al2O3-SiO2 liguid-phase over 130$0^{\circ}C$ The weight loss of specimens containing MgO with various purity at range of 95 to 99% and par-ticle size of -0.045 mm to -0.074 mm was examined. The oxidation resistance was not changed signficantly with the particle size and purity of MgO powders.

• Journal of Korea Foundry Society
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• v.10 no.1
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• pp.43-49
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• 1990

The influences of Cu and Mg addition on wear properties of SiC particulate reinforced Al-Si metal(alloy) matrix composites were investigated. Metal matrix composites were prepared by combination of compocasting and hot pressing techniques. The main results obtained are as follows : 1) The composite with Mg addition exhibits letter wear resistance than that with Cu addition. It is considered that Mg addition improved wettability of matal matrix composite by the strong segregation to the SiC / Al matrix interface. 2) After homogenization treatment, it was found that the interfacial segregation of Mg was predominant, while that of Cu was not detected. 3) The SiC / Al-11Si eutectic composite exhibits better wear resistance than the SiC / Al-6Si hypoeutectic composite does. 4) It seems that the increase in the amount of Mg addition affects on the uniform dispersion of SiC particulates, on the refinement of microstructure and on age hardening and these effects cause wear resistance improvement of composites.

• Journal of Korea Foundry Society
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• v.15 no.6
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• pp.588-595
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• 1995

SiC particles reinforced Mg-Zr, Mg-Zn and Mg-Zn-Zr composites were manufactured by Rheocompocasting method. Effects of Zn, Zr addition on microstructures and hardness were investigated by using the micro Vickers hardness tester, the optical and scanning electron microscopy. By the Zr addition to the pureMg/SiCp composites, SiC particles become more homogeneously dispersed and grain refined so that the micro hardness of the composite increased. In case of Zn addition, although grain refinement and homogeneous dispersion effects of SiC particles were not obtained, hardness was more increased than the only Zr added composite by the formation of many Mg-Zn intermetallic compounds at grain boundary. In the Mg-Zn-Zr/SiCp composite, the highest value of hardness was obtained by triple effects such as grain refining, dispersion hardening of SiC particles and Mg-Zn compounds.

• Journal of the Korean Ceramic Society
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• v.43 no.7 s.290
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• pp.427-432
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• 2006

The preparation of SiC powder by SHS in the system of $SiO_2-Mg-C$ was investigated in this study. The effects of various processing parameters such as the initial pressure of inert gas in reactor, the content of Mg and C in mixture and the size of $SiO_2$ particles on the synthesis of SiC by SHS methode were investigated. The minimum initial pressure of inert gas in reactor for SHS reaction in this system was 5 atm, and as the pressure increased, and the concentration of unreacted Mg decreased. At 50 atm of the initial inert gas pressure in reactor, the optimum composition for the preparation of pure SiC was $SiO_2+2.5Mg+1.2C$. SiC powder synthesized in this condition had a mixture of ${\alpha}-SiC\;and\;{\beta}-SiC$ with an irregular shape and the particle size of $0.5{\sim}0.8{\mu}m$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.233-239
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• 1998

SiC thin films were deposited by chemical vapor deposition method using tetramethylsilane (TMS) and hexamethyldisilane (HMDS). The chamber pressure during the deposition was kept at about 1 torr. Precursor was transported to the reaction chamber by $H_2$gas and SiC deposition was carried out at the reaction temperature of $1200^{\circ}C$. Si-wafer masked with tantalum and MgO single crystal covered with platinum and molybdenum were used as substrates. The selectivity of SiC deposition was observed by comparing the microstructure between metal (Ta, Pt, and Mo) surfaces and substrate surfaces (Si and MgO). The deposited films were identified as the $\beta-SiC$ phase by X-ray diffraction pattern. Also, the deposition -behavior of SiC on each surface was investigated by the scanning electron microscope analysis.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.90-95
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• 2000

The substrate for pyroelectric IR sensor which has orientation similar to MgO single crystal was fabricated by depositing the MgO thin film on $Si_3N_4/SiO_2/Si_3N_4$/Si. The MgO thin film was deposited by RF magnetron sputtering. The c-axis orientation of PLT thin film deposited on Pt/MgO(100)/$Si_3N_4/SiO_2/Si_3N_4$/Si substrate was investigated. The MgO thin film deposited at $500^{\circ}C$ at a gas pressure of 30 mTorr with RF power of 160 W exhibited a good a-axis orientation. The PLT thin films deposited on these substrates also exhibited c-axis orientation similar to the PLT thin films deposited on MgO single crystal substrate.

• Applied Microscopy
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• v.29 no.3
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• pp.281-289
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• 1999

The stirred and thixoformed $SiC_p/AZ91HP$ Mg composites are studied on the basis of microstructural analysis using transmission electron microscopy (TEM). The products of interfacial reaction are identified as $Mg_2Si$, MgO and $Mg_{17}Al_{12}$ phases and the crystallized phases are found to be orthorhmbic $Al_6Mn$ and decagonal T phases. It is shown that $Mg_2Si$ and $Mg_{17}Al_{12}$ phases are found at the surface of $SiC_p$ and $Al_6Mn$ is found near interface and crystallized on the matrix. Phase identification is carried out by crystallographic work based on primitive cell volume, zero order Laue zone (ZOLZ) patterns and single convergent beam electron diffraction (CBED) patterns containing higher order Laue zone ring from a nanosized region.

• Journal of Power System Engineering
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• v.5 no.4
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• pp.74-81
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• 2001

The infiltration behavior of molten Al-alloy, microstructures, hardness, and the interfacial reactions of $SiC_p/Al$ composites fabricated by the pressureless infiltration technique were investigated. It was made clear that both the weight fraction of SiC reinforcement and additive Mg content considerably influenced on the infiltration behavior of the molten Al-alloy matrix. Complete infiltration of molten Al-alloy achieved under the conditions that weight fraction of SiC content is more than 30wt%, and additive Mg content is more than 9wt%. Interfacial region of Al-alloy matrix and SiC reinforcement phase, $Mg_2Si$ was formed by the reaction between Mg and SiC. Another reaction product AlN was also formed by the reaction between Al-alloy matrix and gas atmosphere nitrogen.