• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.2
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• pp.43-48
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• 2001

GaN micro-crystals were synthesized through the direct reaction of $NH_3$with a Ga-melt. The bubbling technique in the atmospheric $NH_3$ ambient was employed and dark-gray-colored GaN micro-crystals with various sizes ranging from 0.5~30$\mu \textrm{m}$ were obtained. It was confirmed that product yield increased with increasing reaction temperature. The synthesized GaN micro-crystals were characterized by using a particle size analyzer, SEM, XRD and PL. The variation of reaction temperature from $850^{\circ}C$ to $1150^{\circ}C$ result in morphological change and in optical characteristics of GaN micro-crystals. Especially; GaN micro-crystals synthesized at 10sec showed the highest crystallinity and low yellow band luminescence.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.93-95
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• 2012

We report on the growth and characterization of the nano- and micro scale GaN structures selectively grown on the vertex of GaN stripes using the metal organic vapor phase epitaxy method and conventional photolithography technique. The triangular shaped nano- and micro GaN structures which have semi-polar {11-22} facets were formed only on the vertex of the lower GaN stripes. Crystalline defects reduction was observed by transmission electron microscopy for upper GaN stripes. We also have grown the InGaN/GaN multi-quantum well structures on the semi-polar facets of the upper GaN stripes. Cathodoluminescence images were taken at 366, 412 and 555 nm related to GaN band edge, InGaN/GaN layer and defects, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.297.2-297.2
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• 2014

Strong exciton-photon coupling in microcavities have generated an intense research effort since quasiparticles called exciton polaritons are produced and shows interesting phenomena. Most of studies have been done with GaAs based microcavities at cryogenic temperature. Recently, GaN material which has large exciton binding energy and oscillator strength has much attention because strong coupling between photon and exciton could be realized at room temperature. However, fabrication of high quality microcavity using GaN is challengeable due to the large mismatch between the lattice and the thermal expansion coefficient in GaN based distributed Bragg mirror. Here, we observed strong coupling regime of exciton-photon in GaN micro-rods which were grown by metalorganic vapour phase epitaxy (MOCVD) on Si substrate. Owing to the hexagonal cross-section of micro-rod, whispering gallery modes of photon are naturally formed and could be coupled with exciton in GaN. Using angle-resolved micro-photoluminescence measurement, exciton polariton dispersion curves were directly observed from GaN micro-rod. We expect room temperature exciton polariton condensation could be realized in high quality GaN micro-rod.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.167-171
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• 2021

The core-shell InGaN/GaN Multi Quantum Well-Nanowires (MQW-NWs) that were selectively grown on oxide templates with perfectly circular hole patterns were highly crystalline and were shaped as high-aspect-ratio pyramids with semi-polar facets, indicating hexagonal symmetry. The formation of the InGaN active layer was characterized at its various locations for two types of the substrates, one containing defect-free MQW-NWs with GQDs and the other containing MQW-NWs with defects by using HRTEM. The TEM of the defect-free NW showed a typical diode behavior, much larger than that of the NW with defects, resulting in stronger EL from the former device, which holds promise for the realization of high-performance nonpolar core-shell InGaN/GaN MQW-NW substrates. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.114-118
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• 2011

We report on the growth and characterization of nano and micro scale GaN structures selectively grown on the vertex of hexagonal GaN pyramids. $SiO_2$ near the vertex of hexagonal GaN pyramids was removed by optimized photolithgraphy process and followed by a selective growth of nano and micro scale GaN structures by metal organic vapor phase epitaxy (MOVPE). The pyramidal GaN nano and micro structures which have crystal facets of semi-polar {1-101} facets were formed only on the vertex of GaN pyramids and the size of the selectively grown nano and micro GaN structures was easily controlled by growth time. As a result of TEM measurement, Reduction of threading dislocation density was conformed by transmission electron microscopy (TEM) in the selectively grown nano and micro GaN structures. However, stacking faults were newly developed near the edge of $SiO_2$ film because of the roughness and nonuniformity in thickness of the $SiO_2$ film.

• IE interfaces
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• v.20 no.4
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• pp.504-514
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• 2007

The multicast routing problem lies in the composition of a multicast routing tree including a source node and multiple destinations. There is a trade-off relationship between cost and delay, and the multicast routing problem of optimizing these two conditions at the same time is a difficult problem to solve and it belongs to a multi-objective optimization problem (MOOP). A multi-objective genetic algorithm (MOGA) is efficient to solve MOOP. A micro-genetic algorithm(${\mu}GA$) is a genetic algorithm with a very small population and a reinitialization process, and it is faster than a simple genetic algorithm (SGA). We propose a multi-objective micro-genetic algorithm (MO${\mu}GA$) that combines a MOGA and a ${\mu}GA$ to find optimal solutions (Pareto optimal solutions) of multicast routing problems. Computational results of a MO${\mu}GA$ show fast convergence and give better solutions for the same amount of computation than a MOGA.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.12 no.3
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• pp.82-88
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• 2003

SGA(Single Genetic Algorithm) is a heuristic global optimization method based on the natural characteristics and uses many populations and stochastic rules. Therefore SGA needs many function evaluations and takes much time for convergence. In order to solve the demerits of SGA, ${\mu}GA$(Micro-Genetic Algorithm) has recently been developed. In this study, ${\mu}GA$ which have small populations and fast convergence rate, was applied to structural optimization with discrete or integer variables such as 3, 10 and 25 bar trusses. The optimized results of ${\mu}GA$ were compared with those of SGA. Solutions of ${\mu}GA$ for structural optimization were very similar or superior to those of SGA, and faster convergence rate was obtained. From the results of examples, it is found that ${\mu}GA$ is a suitable and very efficient optimization algorithm for structural design.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2003.04a
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• pp.9-14
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• 2003

SGA (Single Genetic Algorithm) is a heuristic global optimization method based on the natural characteristics and uses many populations and stochastic rules. Therefore SGA needs many function evaluations and takes much time for convergence. In order to solve the demerits of SGA, $\mu$GA(Micro-Genetic Algorithm) has recently been developed. In this study, $\mu$GA which have small populations and fast convergence rate, was applied to structural optimization with discrete or integer variables such as 3, 10 and 25 bar trusses. The optimized results of $\mu$GA were compared with those of SGA. Solutions of $\mu$GA for structural optimization were very similar or superior to those of SGA, and faster convergence rate was obtained. From the results of examples, it is found that $\mu$GA is a suitable and very efficient optimization algorithm for structural design.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.554-557
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• 2001

In this work, we had synthesis the GaN powder by direct reaction between Ga and NH$_3$at the temperature range of 1000∼1150$^{\circ}C$, and investigated the reaction condition dependence of the GaN yield and some properties of GaN powder. The synthesized powder had Platelet and prismatic shape and showed hexagonal crystalline structure with the lattice constants of a= 3.1895 ${\AA}$, c= 5.18394 ${\AA}$, and the ratio of c/a = 1.6253. The GaN powder synthesis processes were examined based on the oxidation process of mater, and found as combined with mass transport process for the initial stage and diffusion-limited reaction for the extended reaction.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.121-121
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• 1999

Gallium nitride (GaN) semiconductor is intensively under investigation for commercialization of short wavelength light emitting devices and laser diodes. One of serious obstacles to overcome is to reduce the defect density in GaN film grown by various techniques such as MOCVD, HVPE, etc. Many research groups including SAIT are trying to improve the defect density to 106-107/cm2 from the level of 108-1010/cm2. We have investigated epitaxial growth behaviour of GaN thin and thick films under hidride vapour phase epitaxy (HVPE) condition. In this report, we present the microstructural and crystallographical characteristics of the GaN films grown on sapphire (0001) substrate which were studied by both conventional and high-resolution transmission electron microscopy (TEM). Also we present some microscopic analysis results obtained from GaN films grown by ELO(dpitzsial lateral overgrowth)-HVPE and from GaN quantum well structures grown by MOCVD. Another serious problem in growing GaN thick film by HVPE is internal micro-cracks. We also comment the origin of the micro-crack.