• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.2
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• pp.325-328
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• 2020

This paper demonstrated a voltage-controlled oscillator (VCO) using cost-effective (1-poly 6-metal) mixed signal standard CMOS process. To have the high-quality factor inductor in LC resonator with thin metal thickness, patterned-ground shields (PGS) was adopted under the spiral to effectively reduce the ac current of low resistive Si substrate. And, because of thin top-metal compared with that of RF option (2 ㎛), we make electrically connect between the top metal (M6) and the next metal (M5) by great number of via array along the metal traces. The circuit operated from 2.48 GHz to 2.62 GHz tuned by accumulation-mode varactor device. And the measured phase noise of LC VCO has -123.7 dBc/Hz at 1MHz offset at 2.62 GHz and the dc-power consumption shows 2.07 mW with 1.8V supply voltage, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.395-404
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• 2016

A 6-bit 3.4 GS/s flash ADC in a 65 nm CMOS process is reported along with the proposed 4x time-domain interpolation technique which allows the reduction of the number of comparators from the conventional $2^N-1$ to $2^{N-2}$ in a N-bit flash ADC. The proposed scheme effectively achieves a 4x interpolation factor with simple SR-latches without extra clocking and calibration hardware overhead in the interpolated stage where only offset between the $2^{N-2}$ comparators needs to be calibrated. The offset in SR-latches is within ${\pm}0.5$ LSB in the reported ADC under a wide range of process, voltage supply, and temperature (PVT). The design considerations of the proposed technique are detailed in this paper. The prototype achieves 3.4 GS/s with 5.4-bit ENOB at Nyquist and consumes 12.6 mW power at 1 V supply, yielding a Walden FoM of 89 fJ/conversion-step.

• Journal of information and communication convergence engineering
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• v.3 no.1
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• pp.28-32
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• 2005

In this paper, we propose a novel test method to effectively detect hard and soft faults in CMOS 2-stage op-amps. The proposed method uses a very high frequency sinusoidal signal that exceeds unit gain bandwidth to maximize the fault effects. Since the proposed test method doesn't require any complex algorithms to generate the test pattern and uses only a single test pattern to detect all target faults, therefore test costs can be much reduced. The area overhead is also very small because the CUT is converted to a unit gain amplifier. Using HSPICE simulation, the results indicated a high degree of fault coverage for hard and soft faults in CMOS 2-stage op-amps. To verify this proposed method, we fabricated a CMOS op-amp that contained various short and open faults through the Hyundai 0.65-um 2-poly 2-metal CMOS process. Experimental results for the fabricated chip have shown that the proposed test method can effectively detect hard and soft faults in CMOS op-amps.

• Journal of the Institute of Convergence Signal Processing
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• v.9 no.2
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• pp.146-153
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• 2008

Integrated humidity sensor system with two stages operational amplifier has been designed and fabricated by $0.8{\mu}m$ analog mixed CMOS technology. The system (28 pin and $2mm{\times}4mm$) consisted of Wheatstone-bridge type humidity sensor, resistive type humidity sensor, temperature sensors and operational amplifier for signal amplification and process in one chip. The poly-nitride etch stop process has been tried to form the sensing area as well as trench in a standard CMOS process. This modified technique did not affect the CMOS devices in their essential characteristics and gave an allowance to fabricate the system on same chip by standard process. The operational amplifier showed the stable operation so that unity gain bandwidth was more than 5.46 MHz and slew rate was more than 10 V/uS, respectively. The drain current of n-channel humidity sensitive field effect transistor (HUSFET) increased from 0.54 mA to 0.68 mA as the relative humidity increased from 10 to 70 %RH.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.503-504
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• 2006

This paper presents the design and fabrication of a LC voltage-controlled oscillator (VCO) using 1-poly 6-metal mixed signal CMOS process. To obtain the high-quality factor inductor in LC resonator, patterned-ground shields (PGS) is placed under the symmetric inductor to reduce the effect from image current of resistive Si substrate. Moreover, due to the incapability of using thick top metal layer of which the thickness is over $2{\mu}m$, as used in many RF CMOS process, the structure of dual-metal layer in which we make electrically short circuit between the top metal and the next metal below it by a great number of via materials along the metal traces is adopted. The circuit operated from 2.63 GHz to 3.09 GHz tuned by accumulation-mode MOS varactor. The corresponding tuning range was 460 MHz. The measured phase noise was -115 dBc/Hz @ 1MHz offset at 2.63 GHz carrier frequency and the current consumption and the corresponding power consumption were about 2.6 mA and 4.68 mW respectively.

• The Magazine of the IEIE
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• v.42 no.7
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• pp.45-53
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• 2015

Power 소자 기술은 digital & mixed signal device와 on-chip 구현을 위해서 CMOS 공정에 대한 기본 이해가 필요하다. CMOS 공정 기반 위에 power device 공정을 추가하면서 다양한 operation voltage의 power 소자를 구현하고, passive device 들을 동일 공정에서 구현하여 다양한 components 들로 power IC 제품을 design 할 수 있도록 modular process를 제공하는 것이 중요하다. 또한 power device로 주로 사용되는 LDMOS 소자에 대한 performance 개선을 위해 simulation을 통해 key device parameter들의 특성을 예측하고, 구조를 설계하는 것이 Si process 전에 중요한 일 중의 하나이다. 아울러 power management가 potable power, consumer electronics 및 green energy에서 가장 빠르게 성장하는 분야이므로, 차별화된 power 소자 기술을 확보하여 급변하는 시장 환경에 대응하는 것이 필요하다.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1185-1188
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• 2003

This paper describes a design for a 2.5Gb/s serial data link CMOS transceiver based on the InfiniBand$^{TM}$ specification. The transceiver chip integrates data serializer, line driver, Tx PLL, deserializer, clock recovery, and lock detector. The designed transceiver is fabricated in a 0.25 ${\mu}{\textrm}{m}$ CMOS mixed-signal, 1-poly, 5-metal process. The first version chip occupies a 3.0mm x 3.3mm area and consumes 450mW with 2.5V supply. In 2.5 Gbps, the output jitter of transmitter measured at the point over a 1.2m, 50Ω coaxial cable is 8.811ps(rms), 68ps(p-p). In the receiver, VCO jitter is 18.5ps(rms), 130ps(p-p), the recovered data are found equivalent to the transmitted data as expected. In the design for second version chip, the proposed clock and data recovery circuit using linear phase detector can reduce jitter in the VCO of PLL.L.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.1
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• pp.7-13
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• 2011

A mixed-mode QPSK demodulator for 60-GHz wireless personal area network application is demonstrated. In this work, mixed-mode QPKS demodulation scheme achieving low power consumption and small area is employed. The prototype chip realized by 60-nm CMOS Logic process can demodulate up to 4.8-Gb/s QPSK signals at 4.8-GHz carrier frequency. At this carrier frequency, the demodulator core consumes 54 mW from 1.2-V power supply while the chip area is $150{\times}150{\mu}m^2$. Using the fabricated chip, transmission and demodulation of 1.7-GSymbol/s QPSK signal in 60-GHz link is demonstrated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.375-379
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• 2016

A current subtraction technique with parallel operation system is proposed to remove excessive current in touch screen application. The proposed current subtraction remove the current which go into the input node of charge amplifier. The value of subtraction current is same with current when touch screen is not touched. As a result, charge amplifier output is only proportional to variation of mutual capacitor, which make dynamic rage is increased. Also, Transmitter (Tx) driving signal and subtraction driving signal are out of phase each other. Thus, noise generated in Tx is cancelled. The proposed IC is implemented in a mixed-mode 0.18-um CMOS process. Overall system is designed for touch screen panel (TSP) with 16 driving lines and 8 sensing lines. 5-V supply voltages are used in the proposed circuits. For multiple Tx driving signal, Walsh codes are used and signal frequency is 300 khz. By using proposed technique, dynamic rage is improved 36 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.11
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• pp.1627-1634
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• 2021

This paper introduces a low-power compact ADC circuit for analog Convolutional filter for low-power neural network accelerator SOC. While convolutional neural network accelerators can speed up the learning and inference process, they have drawback of consuming excessive power and occupying large chip area due to large number of multiply-and-accumulate operators when implemented in complex digital circuits. To overcome these drawbacks, we implemented an analog convolutional filter that consists of an analog multiply-and-accumulate arithmetic circuit along with an ADC. This paper is focused on the design optimization of a low-power 8bit SAR ADC for the analog convolutional filter accelerator We demonstrate how to minimize the capacitor-array DAC, an important component of SAR ADC, which is three times smaller than the conventional circuit. The proposed ADC has been fabricated in CMOS 65nm process. It achieves an overall size of 1355.7㎛², power consumption of 2.6㎼ at a frequency of 100MHz, SNDR of 44.19 dB, and ENOB of 7.04bit.