• Journal of the Korean institute of surface engineering
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• v.43 no.6
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• pp.266-271
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• 2010

Ternary Mo-Cu-N films were deposited on Si wafer substrates with various copper contents by magnetron sputtering method using Mo target and Cu target in $Ar/N_2$ gaseous atmosphere. As increasing $N_2$ pressure, the microstructure of Mo-N films changed from ${\gamma}-Mo_2N$ of (111) having face-centered-cubic (FCC) structure to $\delta$-MoN of (200) having hexagonal structure. Detailed the microstructures of the Mo-Cu-N coatings were studied by X-ray diffraction, scanning electron microscopy and field emission transmission electron microscope. The results indicated that the incorporation of copper into the growing Mo-N coating led to the $Mo_2N$ and MoN crystallites were more well-distributed and refined and the copper existed in grain boundary. Ternary Mo-Cu-N films had a composite microstructure of the nanosized crystal crystalline ${\gamma}-Mo_2N$ and $\delta$-MoN surrounded by amorphous $Cu_3N$ phase.

• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.245-249
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• 2006

In this study, ternary Ti-Mo-N and new quaternary Ti-Mo-Si-N coatings were synthesized on steel substrates(AISI D2) and Si wafers by a hybrid coating system of arc ion plating (AIP) using Ti target and d.c. magnetron sputtering technique using Mo and Si targets in $N_2/Ar$ gaseous mixture. Ternary Ti-Mo-N coatings were substitutional solid-solution of (Ti, Mo)N and showed maximum hardness of approximately 30 GPa at the Mo content of ${\sim}10$. %. The Ti-Mo-Si-N coating with the Si content of 8.8 at. % was a composite consisting of fine (Ti, Mo)N crystallites and amorphous $Si_3N_4$ phase. The hardness of the Ti-Mo-Si(8.8 at. %)-N coatings exhibited largely increased hardness value of ${\sim}48$ GPa due to the microstructural evolution to the fine composite microstructure and the refinement of (Ti, Mo)N crystallites. The average friction coefficient of the Ti-Mo-Si-N coatings largely decreased with increase of Si content. The microstructures of Ti-Mo-Si-N coatings were investigated with instrumental analyses of XRD, XPS, and HRTEM in this work.

• Journal of the Korean Chemical Society
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• v.18 no.4
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• pp.267-271
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• 1974

The tetradentate schiff base, N,N'-bis(salicylaldehyde)-ethylene diimine has been reacted with a series of Mo(IV), Mo(V), Mo(IV), and Mo(III) oxidation states to form new Complexes; $[MoO_2(C_{16}H_{14}O_2N_2)], (MoO(C_{16}H_{14}O_2N_2)]_2O, (Mo(SCN)(C_{16}H_{14}O_2N_2)]_2O, and (Mo(H_2O)(C_{16}H_{14}O_2N_2)]_2O.$ These complexes have hexa coordinated configurations and the mole ratio of these ions to the ligand was 1:1. These complexes have been identified by visible spectra, infrared specra, T.G.A., D.T.A., and elemental analysis.

• Journal of the Korean Magnetics Society
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• v.16 no.5
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• pp.240-244
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• 2006

In this paper, magnetic properties and annealing behavior of spin valve structures using Mo(MoN) layers as underlayers were studied varying the thickness of the underlayers. The spin valve structure was consisted of Si substrate/$SiO_2(2,000{\AA})/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$. Also, MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The resistivity of the MoN film increased as the $N_2$ gas flow rate was increased. After annealing at $600^{\circ}C$, XRD results did not show peaks of silicides. XPS results indicated MoN film deposited with 5 sccm of $N_2$ gas flow rate was more stable than the film deposited with 1 sccm of $N_2$ gas flow rate. The variations of MR ratio and magnetic exchange coupling fold were small for the spin valve structures using Mo(MoN) underlayers up to thickness of45 ${\AA}$. MR ratio of spin valves using MoN underlayers deposited with various $N_2$ gas flow rate was about 7.0% at RT and increased to about 7.5% after annealing at $220^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased to about 3.5%. Variation of $N_2$ gas flow rate up to 5 sccm did not change the MR ratio and $H_{ex}$ appreciably.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.110-114
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• 2006

In this work, comparative studies on microstructure and mechanical properties between $Mo_2N$ and Mo-Si-N coatings were conducted. Ternary Mo-Si-N coatings were deposited on AISI D2 steel substrates by a hybrid method, where AIP technique was combined with a magnetron sputtering technique. Instrumental analyses of XRD, HRTEM, and XPS revealed that the Mo-Si-N coatings must be a composite consisting of fine $Mo_2N$ crystallites and amorphous $Si_3N_4$. The hardness value of Mo-Si-N coatings significantly increased from 22 GPa of $Mo_2N$ coatings to about 37 GPa with Si content of 10 at.% due to the refinement of $Mo_2N$ crystallites and the composite microstructure characteristics. The average friction coefficient of the Mo-Si-N coatings gradually decreased from 0.65 to 0.4 with increasing Si content up to 15 at.%. The effects of Si content on microstructure and mechanical properties of Mo-N coatings were systematically investigated.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.38-38
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• 2018

TiMoN 코팅층은 우수한 내마모 특성과 낮은 마찰계수를 보여 많은 연구가 진행되고 있다. 본 연구에서는 음극아크 증착으로 질소 가스 유량, 아크 전류, 기판 전압 등 공정 변수를 제어하여 TiMoN 코팅층을 스테인리스와 초경 기판 위에 제조하고 색상, 미세구조, 경도 등 물리적 특성을 평가하였다. TiMo 타겟은 Mo가 약 8 at.% 함유되어 있으며 직경은 80 mm이었다. 색차계를 이용하여 TiMoN 코팅층의 색상을 분석한 결과, 질소 유량이 증가할수록 $a^*$와 $b^*$ 값이 증가하는 경향을 확인하였다. 질소 유량 90 sccm으로 제조한 TiMoN 코팅층은 TiN 코팅층과 유사한 색상을 보였다. TiMoN 코팅층의 조성을 에너지분산형 분광기(energy dispersive spectroscopy)로 분석한 결과, 타겟과 유사한 조성을 보였다. TiMoN 코팅층의 단면을 주사전자현미경으로 관찰한 결과, 주상정 형성이 확인되었으며 코팅층 표면에는 음극 아크 공정 시 발생하는 거대입자가 발견되었다. 질소 유량 50 sccm으로 제조한 TiMoN 코팅층은 약 3000 Hv의 경도 값을 보였다. X-선 분광기로 TiMoN 코팅층의 결정성을 분석한 결과, TiN과 유사한 합금상이 형성된 것을 확인할 수 있었다. TiMoN 코팅층은 TiN과 유사한 색상을 보였으며 경도는 TiN보다 높은 값을 보여 절삭공구, 금속 가공용 부품 등 고경도 코팅층으로 활용이 가능할 것으로 판단된다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.205-207
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• 2009

아크이온플래이팅 기술과 스퍼터링 기술이 결합된 하이브리드 코팅 시스템을 이용하여 STS 304와 Si 기판에 4성분계 Cr-Al-Mo-N 코팅을 증착하였다. $N_2$/Ar 혼합가스 분위기하에 아크 타겟은 Cr을 사용하였고 스퍼터링 타겟은 Al과 Mo를 사용하였으며 합성된 Cr-Al-Mo-N 코팅은 주로 치환고용된 (Cr, Al, Mo)N으로 구성되었다. 최고 경도값은 Mo 함량이 24.2 at.%일 때 35 GPa을 나타냈으며 마찰계수는 Mo의 함량이 0에서 33.2 at.%로 증가함에 따라 0.9에서 0.48로 감소하였다. 이는 $MoO_3$가 코팅면과 스틸볼 계면에서 고체 윤활제로 작용한 것으로 사료된다. 그러나 Cr-Al-Mo-N 코팅은 MoN의 낮은 내산화온도로 인하여 Cr-Al-N에 비하여 더 낮은 온도에서 산화되었다.

• Journal of the Korean Chemical Society
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• v.17 no.3
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• pp.169-173
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• 1973

The tridentate schiff base ligand, salicyliden amino-o-hydroxy benzene, has derived from salicylaldehyde and o-amino phenol. This ligand reacts with a series of Mo (VI), Mo (V), Mo (IV), and Mo (III) oxidated states and forms a new complexes; [Mo O$_2(H_2O)\;(C_{13}H_9O_2N)]$, [MoO Cl$(H_2O)\;(C_{13}H_9O_2N)]$, [Mo(SCN)$_2(H_2O)\;(C_{13}H_9O2_N)]$ 및 $[Mo(H_2O)_2\;(C_{13}H_9O_2N)]_2O$. The Mo (VI), Mo(V) and Mo(Ⅳ) ions in these complexes are octahedron, hexa coordinate, and the mole ratio of these ions to the ligand are 1 : 1, but Mo (III) Complex is a Mo-O-Mo oxygen bridge bond and polynuclear, and the mole ratio of Mo (III) to the ligand 1 : 1 above facts are identified from the data of Infrared spectra, visible spectra, and elemental analysis.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.125-127
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• 2007

MoN 코팅막은 Ar과 $N_2$가 섞인 가스 상태 안에서 몰리브덴(Mo) 타겟을 사용해서 아크 이온 플레이팅법을 사용하여 stainless steel 표면 위에 증착을 시켰다. MoN 코팅막의 미세 결정 구조의 특징은 X-선 회절 분석(X-ray Diffractormeter, Phillips co. X'pert)과 XPS를 사용해서 측정하였다. MoN 코팅막은 순수 Mo 코팅막의 13GPa 보다 높은 25 GPa의 미세경도값을 나타냈으며, 또한 Mo 코팅막에 N의 함량이 증가할수록 마찰계수가 낮아지는 것을 알 수 있었다. 이번 연구에서는 MoN 코팅막에서 질소 함량을 변화 시켜 MoN 코팅막의 미세구조와 그 특성에 대하여 연구하였다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.6
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• pp.34-41
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• 1984

MOEN/MO double layer which is to be used It)r the RMOS (refractory metal oxide semiconductor) gate material has been fabricated by means of low temperature reactive sputtering in N2 and Ar mixture. Good Mo2N film was obtained in the volumetric mixture of Ar:N2=95:5. The sheet resistance of the fabricated Mo7N film was about 1.20 - 1.28 ohms/square, which is about an order of magnitude lower than that of polysilicon film, and this would enable to improve the operational speed of devices fabricated with this material. When PSG (phosphorus silicate glass) was used as impurity diffusion source for the source and drain of the RMOSFET in the N2 atmosphere at about 110$0^{\circ}C$, the Mo2N was reduced to Mo resulting in much smaller sheet resistance of about 0.38 ohm/square. The threshold voltage of the RMOSFET fabricated in our experiment was - 1.5 V, and both depletion and enhancement mode RMOSFETs could be obtained.