• Progress in Superconductivity and Cryogenics
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• v.17 no.3
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• pp.9-12
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• 2015

NbN thin films were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. Total sputtering gas pressure was fixed while varying $N_2$ flow rate from 1.4 sccm to 2.9 sccm. X-ray diffraction pattern analysis revealed dominant NbN(200) orientation in the low $N_2$ flow rate but emerging of (111) orientation with diminishing (200) orientation at higher flow rate. The dependences of the superconducting properties on the $N_2$ gas flow rate were investigated. All the NbN thin films showed a small negative temperature coefficient of resistance with resistivity ratio between 300 K and 20 K in the range from 0.98 to 0.89 as the $N_2$ flow rate is increased. Transition temperature showed non-monotonic dependence on $N_2$ flow rate reaching as high as 11.12 K determined by the mid-point temperature of the transition with transition width of 0.3 K. On the other hand, the upper critical field showed roughly linear increase with $N_2$ flow rate up to 2.7 sccm. The highest upper critical field extrapolated to 0 K was 17.4 T with corresponding coherence length of 4.3 nm. Our results are discussed with the granular nature of NbN thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.66-69
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• 2001

Effect of $N_2$ flow rate on properties of GaN thin films grown by plasma-enhanced molecular beam epitaxy(PEMBE) was discussed to optimize the quality of thin films. It was found that at low $N_2$ flow rate indicating high III/V flux ratio, the growth rate of GaN thin films was controlled by $N_2$ flux, and at high $N_2$ flow rate the growth rate was not controlled by $N_2$ flux any longer. It was also found that III/V flux ratio affected film quality. The film grown at higher $N_2$ flow rate showed low background carrier concentration, higher carrier mobility, and narrow FWHM in band-edge emission of low temperature PL. It is thought that the film in more Ga flux region was grown by 2-dimensional layer-by-layer growth mode, and the film in more nitrogen region was grown by 3-D island growth mode. All samples exhibited a good crystallinity.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.123-124
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• 2011

플라즈마 화학적 기상 증착(plasma enhanced chemical vapor deposition)공정 중 NH3 gas flow rate, RF power, SiH4 gas flow rate을 고정시키고 N2O gas flow rate을 0 sccm부터 250 sccm까지 변화시키는 조건 하에 SiON박막을 증착한 후 그 투과율, 굴절률을 측정하고 분석하였다. N2O gas flow rate조건별 시편들은 증착율을 계산하여 350 nm 두께로 동일하게 SiON을 증착하였고, borofloat위에 SiON을 증착한 샘플은 투과율을, 실리콘기판 위에 SiON을 증착한 샘플로는 굴절률을 측정하였다. 투과율의 경우는 UV/Vis spectrometer를 이용해 633 nm, 1550 nm 두 가지 파장 대 모두에서 N2O gas flow rate이 가장 큰 250 sccm일 때 가장 높은 것을 알 수 있었고 N2O gas flow rate이 낮아질수록 투과율 또한 작아지는 경향을 보였다. 굴절률은 ellipsometer를 이용해 측정하였으며 633 nm 파장에서 N2O gas flow rate가 가장 낮은 0 sccm일 때 굴절률이 가장 큰 값을 가지고 N2O gas flow rate이 커질수록 굴절률은 지수함수적으로 감소되었다(n=1.837~1.494). 이는 N2O gas flow rate이 낮을수록 SiN계열에 커질수록 SiO2계열에 가까워지는 현상으로 이해된다. 이러한 실험분석 결과는 향후 실리카 도파로의 설계 및 최적화를 위해 사용될 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• Journal of the military operations research society of Korea
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• v.10 no.2
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• pp.75-83
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• 1984

Consider an m machine flow shop with blocking. The processing time of job j,j=1,..., n on each one of the m machines is equal to the same random variable $X_j$ and is distributed according to $F_i$. We assume that the processing times are stochastically ordered, i.e., $F_{1_{-st}}{<}F_{2_{st}}{<}cdots_{-st}{<}F_n$. We show that the sequence 1,3,5,...,n-1,n,n-2,...,6,4,2 when n is even and sequence 1,3,5,...,n-2,n,n-1 ... 6,4,2 when n is odd minimizes the expected makespan and that the sequence 1,...,n minimizes the expected flow time.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.298-304
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• 2007

We have studied the effect of $N_2$ flow rate on the structural and optical properties of GaN nanorods grown on (111) Si substrates by radio-frequency plasma-assisted molecular-beam epitaxy. The hexagonal shape nanorods with lateral diameters from 80 to 190 nm with increasing $N_2$ flow rate from 1.1 to 2.0 sccm are obtained. However, the ratio of length (thickness) and compact region increases with increasing $N_2$ flow rate up to 1.7 sccm and then saturate. From the photoluminescence, free exciton transition is clearly observed for GaN nanorods with low $N_2$ flow rate. And the PL peak energies are blue-shifted with decreasing diameter of the GaN nanorods due to size effect. Temperature-dependent photoluminescence spectra for the nanorods with $N_2$ flow rate of 1.7 sccm show an abnormal behavior like "S-shape" with increasing temperature.

• The Korean Journal of Ecology
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• v.6 no.2
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• pp.81-89
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• 1983

The change of environmental factors with flow rates were studied quantitatively for two rivers, the Nakdong River and the Sin stream, which have different basins in ecosystem structures, during short period after a heavy rain. In the Nakdong River, transparency, DO, alkalinity and hardness were negatively correlated with the flow rate by logarithmic function, but the concentration of SiO2 was relatively constant regardless of the flow chage. In the Sin stream, transparency, alkalinity, hardness and the concentration of NH3-N, NO2-N and SO4= showed negative correlation with the flow rate by logarithmic function. The ratios of maximum to minimum values for aquatic environmental factors during the samller than that for flow rate in the respective rivers (28 in the Nakdong R.; 50 in the Sin S.). Immediately after the heavy rain, the concentrations of NO2-N, NH3-N and PO4-P in the Sin stream were 8, 6 and 1 times as high as those in the Nakdong River, respectively, but in the stable flow state, those became 94, 25 and more than 10 times, respectively. The load for most of the dissolved environmental constituents changed similarly to the flow rate in both rivers. It is notable that, at the stable flow state, the loads for NH3-N (59g/sec) and NO2-N (3.3g/sec) in the Sin stream were 4.3 and 1.3 times as high as those in the Nakdong River.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.287-292
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• 2010

We have investigated the effects of oxygen flow ratios on the structural, morphological, and optical properties of AlN thin films grown by using radio-frequency reactive magnetron sputtering. The AlN thin films were deposited at $300^{\circ}C$ of substrate temperature, and the reactive gas were supplied with both nitrogen and oxygen. The oxygen flow ratio was varied by controlling the amount of oxygen with respect to the total mixed gases, 0%, 10%, 15%, 20%, 25%, and 30%. The structural, morphological, and optical properties of the deposited AlN thin films were examined by using X-ray diffractometer, scanning electron microscopy, and ultraviolet-visible spectrophotometer. The AlN thin film grown at 10% of oxygen flow ratio indicated an average transmittance of 91.3% in the wavelength range of 350~1,100 nm and an optical band gap of 4.30 eV. The experimental results suggest that AlN thin films can be deposited optionally by varying the oxygen flow ratio.

• Membrane Journal
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• v.4 no.4
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• pp.221-231
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• 1994

The GR51PP(MWCO 50,000) and GR40PP(MWCO 100,000) membranes manufactured by DDS were used in ultrafiltration of dextran(Mw. : 500,000) solution in flat plate ultrafiltration cell filled with various types of turbulence promoters. The flux improvement by using turbulence promoter was higher in laminar flow region than in turbulent flow region. The maximum improvements of permeate flux were foud as 112% and 50% I laminar flow region and turbulent flow region, respectively. Also, the solute rejection of the ultrafiltration membrane was improved by turbulence promoters and its effect was significant in the high transmembrane pressure and laminar flow region. The smaller the spacer mesh size was used, the higher the flux improved, but the pressure drop in ultrafiltration cell also increased. In laminar flow region, pressure drop by the spacer was negligible, but in turbulent flow region it changed significantly depending upon the mesh size of the spacer and therefore, its mesh size must be baken into account in the design of the process. The predicted results of the modified mass transfer correlation had better agreement with experimental results than those of unmodified one, The modified mass transfer correlations for laminar and turbulent flow region are shown as follow. $N_{sh}=0.151(N_{Re})^{0.199}(N_{Sc})^{0.22}(N_{Scm})^{0.197}\;(625 $N_{sh}=0.0165(N_{Re})^{0.428}(N_{Sc})^{0.33}(N_{Scm})^{0.223}\;(5015

• Journal of Sensor Science and Technology
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• v.12 no.3
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• pp.103-111
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• 2003

A chromel-alumel thermoelectric flow sensor using $Si_3N_4/SiO_2/Si_3N_4$ thermal isolation membrane was fabricated. Temperature coefficient of resistance of thin film Pt-heater was about $0.00397/^{\circ}C$, and Seebeck coefficient of chromel-alumel thermocouple was about $36\;{\mu}V/K$. The sensor showed that thermoelectric voltage decreased as thermal conductivity of gas increased, and $N_2$-flow sensitivity increased as heater voltage increased or the distance between heater and thermocouple decreased. When heater voltage was about 2.5 V, $N_2$-flow sensitivity and thermal response time of the sensor were about $1.5\;mV/sccm^{1/2}$ and 0.18 sec., respectively. Linear range in flow sensitivity of the flow sensor was wider than that of Bi-Sb flow sensor.