• 한국표면공학회지
• /
• 제52권2호
• /
• pp.72-77
• /
• 2019

To study the characteristics of AC driven OLED, we fabricated the fluorescent OLEDs and analyzed the electroluminescence characteristics of OLEDs with AC negative voltage. The luminance and the current density of the OLED decreased, and the number and size of the dark spots increased in proportion to the duration time and level of the applied AC negative voltage. The current efficiency of the OLED was improved when high AC negative voltage was applied within a short time. When the AC negative voltage of 10 V was applied for 1 minute, the efficiency was improved by 12.4%. Also, the degradation of luminance and current efficiency due to the duration of light emission was improved in the case of OLED applied for 1 minute with 10 V AC negative voltage. These are expected as a result of the improvement of the leakage current characteristics by eliminating the short-circuit region formed by the defect of the OLED at the AC negative high voltage. As a result, the continuous application of AC negative voltage reduced the luminance and the current density of OLED, but the temporary application of AC negative voltage with the proper time and voltage could improve the efficiency and lifetime of OLED.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2009년도 춘계학술대회 논문집
• /
• pp.130-131
• /
• 2009

AIP(arc ion plating)방법과 마그네슘 스퍼터링(DC reactive magnetron sputtering) 방법을 결합시킨 하이브리드 코팅 시스템으로 Cr-Si-N 코팅막을 합성하였다. 고분해능 TEM 및 SEM 분석들로부터 negative bias voltage에 따른 미세구조의 영향을 나타내었다. negative bias voltage의 증가에 따라 columnar microstructure가 amorphous microstructure로 변화하였다. bias voltage effect에 의해 Cr-Si-N 코팅막내 입자의 크기가 미세해지고 나노 복합체를 잘 형성하였다.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2009년도 추계학술대회 초록집
• /
• pp.159-160
• /
• 2009

AIP(arc ion plating)방법으로 CrN 코팅막을 합성하였다. 고분해능 SEM과 AFM 분석들로부터 negative bias voltage에 따른 미세구조의 영향을 나타내었다. negative bias voltage의 증가에 따라 columnar microstructure가 amorphous microstructure로 변화하였다. bias voltage effect에 의해 CrN 코팅막내 입자의 크기가 미세해지고 나노 복합체를 잘 형성하였다.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
• /
• 제51권4호
• /
• pp.203-209
• /
• 2002

This paper presents a new control scheme for a DVR(Dynamic Voltage Restorer) system consisting of series voltage source PWM converters. To control negative sequence component of source voltage the detection of negative sequence is necessary. Generally, filtering process is used tn do that. Through this filtering process has some problems. This paper suggests a new method of separating positive and negative sequences. This control system is designed using differential controllers and digital filters, and positive sequence and negative sequences are controlled respectively. The performance of the presented controller and scheme are confirmed through simulation and actual experiment by 2.5kVA prototype DVR.

• Journal of Electrical Engineering and Technology
• /
• 제12권2호
• /
• pp.751-760
• /
• 2017

This paper proposes a point of common coupling (PCC) voltage compensation algorithm using a current limitation strategy for use in distributed generation (DG). The proposed strategy maintains the PCC voltage by prioritizing currents when an output current reference is larger than the current capacity of the power condition system (PCS) of the DG. With this strategy, the DG outputs the active current, reactive current, and the negative sequence current. The DG uses the reactive current for maintaining the PCC voltage within a normal range; the negative sequence current is used for reducing the PCC voltage unbalance. The proposed method was verified using PSIM simulation and experimental results.

• 반도체디스플레이기술학회지
• /
• 제18권2호
• /
• pp.29-31
• /
• 2019

The ZTO/p-Si thin film was produced and investigated for tunneling phenomena caused by the interface characteristics of the depletion layer. ZTO thin film was deposited and heat treated to produce barrier potentials by the depletion layer. The negative resistance characteristics were shown in the thin film of ZTO heat treated at $100^{\circ}C$, and the insulation properties were the best. Current decreased in the negative voltage direction by nonlinear show key characteristics, and current decreased in tunneling phenomenon by negative resistance in the positive voltage direction. Heat treated at $100^{\circ}C$, the ZTO thin film has increased barrier potential in the areas of the depletion layer and therefore the current has increased rapidly. The current has decreased again as we go beyond the depletion layer. Therefore, tunneling can be seen to make insulation better. In the ZTO thin film heat treated at $70^{\circ}C$ without tunneling, leakage current occurred as current increased at positive voltage. Therefore, tunneling effects by negative resistance were found to enhance insulation properties electrically.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2013년도 전력전자학술대회 논문집
• /
• pp.244-245
• /
• 2013

This paper proposes a control algorithm for permanent magnet synchronous generator with a back-to-back three-level neutral-point clamped voltage source converter in a medium-voltage offshore wind power system under unbalanced grid conditions. The proposed control algorithm particularly compensates for the unbalanced grid voltage at the point of common coupling in a collector bus of offshore wind power system. This control algorithm has been formulated based on the symmetrical components in positive and negative rotating synchronous reference frames under generalized unbalanced operating conditions. Instantaneous active and reactive power are described in terms of symmetrical components of measured grid input voltages and currents. Negative sequential component of ac input current is injected to the point of common coupling in the proposed control strategy. The amplitude of negative sequential component is calculated to minimize the negative sequential component of grid voltage under the limitation of current capability in a voltage source converter. The proposed control algorithm makes it possible to provide a balanced voltage at the point of common coupling resulting in the generated power of high quality from offshore wind power system under unbalanced network conditions.

• 전기의세계
• /
• 제23권6호
• /
• pp.56-59
• /
• 1974

It is well-known that the anode circuit of SCR has the current controlled negative resistance characteristic. Recently the present auther has shown that the gate circuit of SCR has the voltage controlled negative resistance characteristic for the constant anode voltage. It is shown of the equivalent model to SCR(when conducting) the voltage controlled negative resistance characteristic for gate circuit. And it is possible to make SCR gate oscillators with their desired characteristic for illustration.

• 센서학회지
• /
• 제28권5호
• /
• pp.329-333
• /
• 2019

Solution-processed oxide thin-film transistors (TFTs) have garnered great attention, owing to their many advantages, such as low-cost, large area available for fabrication, mechanical flexibility, and optical transparency. Negative bias stress (NBS)-induced instability of sol-gel IGZO TFTs is one of the biggest concerns arising in practical applications. Thus, understanding the bias stress effect on the electrical properties of sol-gel IGZO TFTs and proposing an effective recovery method for negative bias stressed TFTs is required. In this study, we investigated the variation of transfer characteristics and the corresponding electrical parameters of sol-gel IGZO TFTs caused by NBS and positive bias recovery (PBR). Furthermore, we proposed an effective PBR method for the recovery of negative bias stressed sol-gel IGZO TFTs. The threshold voltage and field-effect mobility were affected by NBS and PBR, while current on/off ratio and sub-threshold swing were not significantly affected. The transfer characteristic of negative bias stressed IGZO TFTs increased in the positive direction after applying PBR with a negative drain voltage, compared to PBR with a positive drain voltage or a drain voltage of 0 V. These results are expected to contribute to the reduction of recovery time of negative bias stressed sol-gel IGZO TFTs.

• 대한전자공학회논문지
• /
• 제13권6호
• /
• pp.7-11
• /
• 1976

연산증폭기를 이용한 전압안정부저항회로를 제안하였으며, 전입력전압범위에 걸쳐서 회로를 해석하였다. 부저항영역에서 이 v-i특성이 2가지 구분된 요인에 의해서 이루어짐을 밝혔고, 이 개념에 의해서 역 v-i특성의 꼭지점을 해석하였다. 제안된 회로를 실험하여 얻은 입력 v-i특성의 직선성은 대단히 양호하였으며, 이들의 부저항치는 전압범위 ±1∼±5V에서 -86∼833Ω였다. 그리고 전입력전압범위에서 v-i특성을 검토했다. A voltage-stable negative resistance circuit with operational amplifier is proposed, and circuit analysis is given all the input voltage range. The behavior of the v-i characteristics in the nogative resistance region is devided into two causes, and top points in the input v-i characteristics of the circuit is analyzed with them. Experimental results of the v-i characteristics of the proposed circuit has a good linearity in the negative region with negative resistance, -86Ω∼-833Ω for the input voltage, ± 1∼± 5 colts. The v-i characteristics of the circuit in all the input voltage range is discussed.