• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.7
• /
• pp.10-16
• /
• 2011

We report on the simulation results of electrical/optical characteristics for nonpolar GaN LED having Mg-doped GaN spacer and quantum barrier, in comparison with those of the typical nonpolar GaN LED. In order to reduce the band-gap energy distortion and conduction-band discontinuity in InGaN/GaN multiple quantum wells(MQWs) of nonpolar GaN LED, and thereby to increase their current-voltage, light output power and emission peak intensity, we applied 6 nm-thick p-type($1{\times}10^{18}\;cm^{-3}$) GaN spacer and GaN QB schemes to the typical nonpolar GaN LED epitaxial structure. As a result, we found that the radiative recombination rate was increased by 23% in MQWs at 20 mA current injection. Also, the forward voltage($V_f$) and the light output power($P_{out}$) were improved by 3.7% and 7%, respectively, for the proposed nonpolar LED epitaxial structure, compared with those of the typical nonpolar GaN LED.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.314.1-314.1
• /
• 2014

The properties of Ni/Au Ohmic contacts formed on nonpolar a-plane GaN grown on r-plane sapphire substrate with different tilt angles are investigated using current-voltage (I-V) measurements. To investigate the effects of pattern direction and size on Ohmic contact properties of a-plane GaN, transmission line method (TLM) patterns are formed either along c-axis and m-axis on nonpolar GaN surface with different size. I-V measurement results show that the size of TLM pattern and formation direction of electrode have an effect on the electrical properties of a-plane GaN. The large sized patterns show the relatively lower sheet resistance compared to the small sized patterns. In addition, the sheet resistance of a-plane GaN along m-axis shows lower values than that along the c-axis. Finally, the effects of miscut angle of r-sapphire substrate ($0.2^{\circ}$, 0.4oand $0.6^{\circ}$) on electrical properties of a-plane GaN will be discussed.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.20.2-20.2
• /
• 2011

III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet due to their wide band gap. However, due to the strong polarization properties of conventional c-plane III-nitrides, the built-in polarization-induced electric field limits the performance of optical devices. Therefore, there has been a renewed interest in the growth of nonpolar III-nitride semiconductors for polarization free heterostructure optoelectronic and electronic devices. However, the crystal and the optical quality of nonpolar/semipolar GaN have been poorer than those of conventional c-plane GaN, resulting in the relative poor optical and electrical properties of light emitting diodes (LEDs). In this presentation, I will discuss the growth and characterization of high quality nonpolar a-plane and semipolar (11-22) GaN and InGaN multiple quantum wells (MQWs) grown on r- and m-plane sapphire substrates, respectively, by using metalorganic chemical vapor deposition (MOCVD) without a low temperature GaN buffer layer. Especially, the epitaxial lateral overgrowth (ELO) technique will be also discussed to reduce the dislocation density and enhance the performance of nonpolar and semipolar GaN-based LEDs.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.395-395
• /
• 2013

GaN는 LED, 태양전지, 그리고 전자소자 등에 쓰이는 물질로, 관련 연구가 활발히 진행되고 있으며, 이와 더불어 top-down방식을 활용한 소자제작 방법 또한 발달되고 있다. 하지만, 일반적으로 LED 제작에 사용되는 c-plane GaN의 경우, c축 방향으로 발생하는 분극의 영향을 받게되며, 분극은 LED내 양자우물의 밴드를 기울게 하여 전자와 홀의 재결합률을 감소시켜 낮은 내부양자효율을 야기한다. 이러한 문제를 해결하기 위해 여러 가지 방법들이 제시되었으며, 그 중에서도 a면, 혹은 m면과 같은 nonpolar면을 사용하는 GaN LED가 주목받고 있다. 본 연구에서는, top-down방식을 통해 약 $2{\mu}m$ 크기의 diameter를 갖는 micro-sized column LED를 구현하였으며, 식각 후 드러나는 semipolar면을 wet treatment를 통해 제거하여 nonpolar면을 드러나게 하였으며, 이 면에 Ni/Au를 contact하여, 전기적, 광학적 특성을 논하였다. Fig. 1은 I-V 특성 그래프이며, Fig. 2는 EL측정 결과(광학적 특성)이다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.147-147
• /
• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.18-18
• /
• 2009

최근 다양하게 연구되고 있는 무분극(nonpolar) 갈륨질화물(GaN) 소재는 자발분극(spontaneous polarization) 및 압전분극(piezoelectric polarization) 등이 발생하지 않아 높은 내부양자효율의 확보가 가능하며, 이러한 장점을 바탕으로 고효율 특성을 갖는 발광다이오드(light-emitting diode) 및 고속 전자소자 등으로의 적용을 위한 연구가 활발히 수행 중 이다. 하지만, 무분극 GaN LED의 구현 시, GaN 박막의 비등방성 성장으로 인한 박막의 막질 저하와 함께 표면에 혼재하는 Ga층과 N층에서 기인되는 절연층의 생성으로 인한 오믹전극 형성의 어려움이 대두되고 있다. 따라서, 고효율의 무분극 GaN LED 구현을 위해서는 무분극 GaN층의 질소층 제거를 위한 표면처리 공정과 더불어 금속/무분극 GaN층 간 발생되는 쇼트키 장벽층의 높이(Schottky barrier height)를 제어하는 연구가 선행되어야 한다. 본 논문에서는 무분극 GaN LED 적용을 위한 n-형 전극물질 및 오믹조건 구현을 위한 금속/무분극 GaN층간 SBH의 제어방법에 대한 연구를 수행하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.229-229
• /
• 2010

We report a high crystalline nonpolar a-plane (11-20) GaN on r-plane (1-102) sapphire substrates with $+0.15^{\circ}$, $-0.15^{\circ}$, $+0.2^{\circ}$, $-0.2^{\circ}$ and $+0.4^{\circ}$ misoriented by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 5 periods the nonpolar a-plane InGaN/GaN (a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN layers with double crystal x-ray diffraction. The FWHM values of $+0.4^{\circ}$ misoriented sapphire substrate were decreased down to 426 arc sec for $0^{\circ}$ and 531 arc sec for $-90^{\circ}$, respectively. Also, the samples were characterized by photoluminescence (PL).

• Journal of the Semiconductor & Display Technology
• /
• v.20 no.3
• /
• pp.167-171
• /
• 2021

The core-shell InGaN/GaN Multi Quantum Well-Nanowires (MQW-NWs) that were selectively grown on oxide templates with perfectly circular hole patterns were highly crystalline and were shaped as high-aspect-ratio pyramids with semi-polar facets, indicating hexagonal symmetry. The formation of the InGaN active layer was characterized at its various locations for two types of the substrates, one containing defect-free MQW-NWs with GQDs and the other containing MQW-NWs with defects by using HRTEM. The TEM of the defect-free NW showed a typical diode behavior, much larger than that of the NW with defects, resulting in stronger EL from the former device, which holds promise for the realization of high-performance nonpolar core-shell InGaN/GaN MQW-NW substrates. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.31-31
• /
• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.172-172
• /
• 2010

In the area of optoelectronic devices based on GaN and related ternary compounds, the two-dimensional system like as quantum wells (QWs) has been investigated as an effective structure for improving the light-emitting efficiency. Generally, the quantum well active regions in III-nitride light-emitting diodes grown on conventional c-plane sapphire substrates have critical problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. However, the QWs grown on nonpolar templates are free from the QCSE since the polar-axis lies within the growth plane of the template. Also the unique characteristic of linear polarized light emission from nonpolar QW structures is attracting attentions because it is proper to the application of back-light units of liquid crystal display. In this study, we characterized optical properties of the a-plane InGaN/GaN QW structures by temperature-dependent photoluminescence (TDPL) measurements. From the photoluminescence (PL) spectrum measured at 300 K, green emission centered at 520 nm was observed for the QW region. Since indium incorporation on nonpolar QWs is lower than that on c-plane, this high indium-doping on a-plane InGaN QWs is not common. Therefore, the effect of high indium composition on optical properties in a-plane InGaN QWs will be extensively studied.