• Title/Summary/Keyword: Offset

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NOx Production Characteristics of Offset-Opposed Impinging Jet Flame (Offset-대향 분출혐의 NOx 생성특징)

  • Seo, Jong-Won;Lee, Chang-Jin
    • 한국연소학회:학술대회논문집
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    • 1999.10a
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    • pp.1-9
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    • 1999
  • The NOx production and combustion characteristics are experimentally compared with an offset with counter-orifice configuration. The offset-opposed impinging flame creates stronger vortex around the stagnation point than the opposed flame. The thermal and mass mixtures be improved and the delay of turbulence dissipation be occurred by the strong vortex. In result, the turbulent flame structure transferred from the wrinkled flame and the corrugated flame to the distributed reaction flame. It was found that the offset-opposed impinging flame decreased more NOx and improved the combustion efficiency than the opposed flame. The principal objective of this study is to develop the low NOx combustor by distributed reaction flame.

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Negative Bias Stress Effect with Offset Structure in Poly-Si TFT's (Offset 구조 Poly-Si TFT의 Negative Bias Stress 효과)

  • 이제혁;변문기;임동규;조봉희;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.141-144
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    • 1998
  • The electrical characteristics of poly-Si TFT's with offset structure by negative bias stress are systematically investigated as a function of offset length. The changes of electrical characteristics, V$\_$th/, off-current, on/off ratio, in the offset structured poly-Si TFT's are smaller than that of the conventional structured poly-Si TFT's under the stress condition (V$\_$ds/=20V, V$\_$gs/=-20V). It is found that the hot carrier effect by negative bias stress is suppressed by the offset structured poly-Si TFT's because the local electric field near the drain region is decreased by offset region.

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A Frequency Synchronization Technique of OFDM (OFDM 수신기를 위한 주파수 동기화 기법)

  • 오지성;정영모;이상욱
    • Proceedings of the Korean Society of Broadcast Engineers Conference
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    • 1995.06a
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    • pp.63-67
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    • 1995
  • This paper proposes a new frequency offset correction technique for OFDM receivers on a frequency-selective fading channel. The frequency offset in the OFDM signals is known to introduce an interchannel interference among the multiple subcarriers, which degrades the receiver performance severely. In order to reduce the frequency offset, this paper describes an algorithm with two stages: acquisition and tracking. At both stages the algorithm oversamples the received OFDM signals. At the acquisition stage the frequency offset is reduced to half or less than the intercarrier spacing by matching the sign patterns of even and odd samples. Next, at tracking stage the frequency offset is compensated by a frequency detector which is controlled by the correlation of the even and odd sample sets. From the results, it is found that the proposed algorithm can correct the frequency offset even if the initial offset exceeds one half of th eintercairrers spacing.

Contouring Tool Path Generation for Dieless CNC Forming using STL Offset (STL offset을 이용한 다이레스 CNC 포밍용 등고선 공구경로 생성)

  • Kang Jae-Gwan;Choi Dong-Woo
    • Journal of the Korean Society for Precision Engineering
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    • v.23 no.2 s.179
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    • pp.191-198
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    • 2006
  • Dieless CNC forming is an innovative technology which can form various materials with complex shape by numerically controlled incremental forming process. In this paper, a method of NC tool path generation based on an STL file for dieless CNC forming is proposed. Tool trajectory adopts the principle of layered manufacturing in rapid prototyping technology, but it is necessary to consider STL offset because of the ball shaped tool with a radius. Vertex offset method which enables to compute offset STL directly is engaged for STL offset. The offseted STL is sliced by cutting planes to generate contouring tool path. Algorithm is implemented on a computer and experimented on a dieless CNC forming machine to show its validity.

Analysis of crosstalk of dual-offset stripline in a FR-4 high multilayer PCB (박판화된 다층기판에서 dual-offset stripline 구조의 누화 해석)

  • 이명호;전용일;전병윤;박권철;강석열
    • Journal of the Korean Institute of Telematics and Electronics S
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    • v.35S no.4
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    • pp.20-29
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    • 1998
  • In this paper, we find the values of near-end crosstalk coefficients in dual-offset stripline of a FR-4 multilayer PCB by an analytic method and a HSPICE simulation method, define calculation errors inananlytic method and the application range, simulate near-end crosstalk coefficients of the FCT(Fast CMOS TTL) in complicated dual-offset stripline by HSPICE and analyze near-end crosstalk and far-end crosstalk coefficients in dual-offset stripline. So, we analyze coupling structure of the near-end crosstalk and far-end crosstalk in the complicated dual-offset striplines that are 1[pF] capacitors termainated, and define a coupling formula of near-end crosstalk and far-end crosstalk coefficients dual-offset striplines.

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Performance Analysis of Synchronous Downlink MC-CDMA with Precoding and Frequency Offset

  • Jang, Won-Mee;Lee, Moon-Woo
    • Journal of Communications and Networks
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    • v.9 no.2
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    • pp.192-197
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    • 2007
  • We analyze the performance of code division multiple access (CDMA) system with multicarrier (MC) that employs precoding in synchronous downlink channels. Even though considerable efforts are undergoing for frequency offset estimation and correction, it is inevitable for the system to bear the remaining frequency offset. Therefore it is important to predict accurately the system performance in the presence of the residual frequency offset. We obtain the bit error rate (BER) performance in terms of the number of users, the spreading factor, the number of sub-carriers, and frequency offset. We assume that the spreading factor is equal to the number of sub-carriers, although we can generalize the case. The simulation results show that the BER of MC-CDMA with precoding shows a performance that varies with frequency offset as well as system loading.

A frequency offset correction technique for coherent OFDM receiver on the frequency-selective fading channel (주파수 선택성 페이딩 채널에서 동기식 OFDM 수신기를 위한 주파수 옵셋 보정 기법)

  • 오지성;정영모;이상욱
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.21 no.4
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    • pp.972-983
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    • 1996
  • This paper proposes a new technique for frequency offset correction for OFDM systems on a frequency selective fading channel. Frequency offset in OFDM introduces interchannel interference among the multiple subcarriers of OFDM signal. To compensate the interference, this paper describes an algorithm with two stages:acquisition and tracking. At both stages, the proposed algorithm oversamples the received OFDM signal to obtain a couple of demodulated symbol sets. At acquisition stage the frequency offset is reduced to half or less of the intercarrier spacings by matching the sign pattern of each element of the sets. Next, at tracking stage the frequency offset is corrected with a frequency detector which is controlled by the correlation of the two sets. It is shown that the proposed algorithm can correct the frequency offset in the event of uncertainty in the initial offset that exceeds one half of the intercarrier spacing. In addition, the proposed algorithm is robust to transmitted symbols and channel characteristics by using oversampled symbol sets.

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The Analysis of Characteristics on n-channel Offset-gated poly-Si TFT's with Electical Stress (전기적 스트레스에 따른 Offset 구조를 갖는 n-채널 다결정 실리콘 박막 트랜지스터의 특성 분석)

  • 변문기;이제혁;임동규;백희원;김영호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.2
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    • pp.101-105
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    • 2000
  • The effects of electrical on n-channel offset gated poly-Si TFT's have been investigated. It is observed that the electrical field near the drain region in offset devices is smaller than that of conventional device by simulation results. The variation rate of threshold voltage and subthreshold slope decrease with increasing the offset length because of lowering the electric field near the drain region. The offset gated poly-Si TFT's have been probed effective in reducing the degradation rate of device performance under electrical stressing.

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Electrical Characteristics of Poly-Si TFT`s with Improved Degradation (열화가 억제된 다결정 실리콘 박막 트랜지스터의 전기적 특성)

  • 변문기;이제혁;백희원;김동진;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.457-460
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    • 1999
  • The effects of electrical positive stress on n-channel LDD and offset structured poly-Si TFT\`s have been systematically investigated in order to analyze the transfer curve\`s shift mechanism. It has been found that the LDD and offset regions behave as a series resistance that reduce the electric field near drain. Hot carrier effects are reduced because of these results. After electrical stress transfer curve’s shift and variation of the off-current are dependent upon the offset length rather than offset region’s doping concentration. Variation of the subthreshold slope is dependent upon offset region’s doping concentration as well as offset length.

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Numerical Analysis Study on Structural Safety and Flow Coefficient of Quadruple Offset Butterfly Valve (사중편심 버터플라이 밸브의 구조 안전성 및 유량계수에 관한 수치해석적 연구)

  • Kim, Geon-Ho;Cha, Jong-Kook;Kim, Gyu-Cheol;Jeong, Dae-Yeong;Lee, Bong-Hee
    • Journal of the Korean Society of Industry Convergence
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    • v.25 no.2_2
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    • pp.279-287
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    • 2022
  • Butterfly valves installed on ships use valves with up to triple offset to improve tightness. However, the triple offset valve has structural problems such as disc deformation and seat separation. Accordingly, interest in quadruple offset butterfly valves with added offset is increasing. In this study, the structural safety of the quadruple offset butterfly valve was examined through numerical analysis. In addition, we intend to evaluate the performance of the valve through flow coefficient analysis.