• Journal of Advanced Navigation Technology
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• v.19 no.3
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• pp.224-229
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• 2015

In this paper, we derived the design equation and implemented the unequal Gysel power divider that is one external resistors using the ABCD parameters analysis. Conventional unequal Gysel divider is difficult to obtain the characteristics of isolation and return loss at between output ports because it can't select a theoretical value of external resistor. To solve those problems, we design the new unequal Gysel power divider with transmission lines and one external resistor that has the characteristics of conventional unequal Gysel divider. To validate this design method, we simulated and measured an 4: 1 unequal Gysel power divider at the center frequency 1 GHz. The measured performances agreed well with the simulation results.

• Composites Research
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• v.12 no.2
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• pp.1-9
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• 1999

The piezoelectric material connected to external electric networks possesses frequency dependent stiffness and loss factor which are also affected by the shunting circuit. The external electric networks are generally specialized for two shunting circuits: one is the case of a resistor alone and the other is the combination of a resistor and an inductor. For resistive shunting, the material properties exhibit frequency dependency similar to viscoelastic materials, but are much stiffer and more independent of temperature. Shunting with a resistor and inductor introduces an electrical resonance, which can change the characteristics of structural resonance optimally in a manner analogous to a PMD (proof mass damper). Passive damping enhancement of composite beam using piezoelectric material connected to external electrical networks is achieved and presented in this paper.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.12
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• pp.80-87
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• 2013

A novel instrumentation amplifier(IA) using positive polarity current-conveyor(CCII+) for electronic measurement systems with low cost, wideband, and gain control with wide range is designed. The IA consists of two CCII+, three resistor, and an operational amplifier(op-amp). The principal of the operating is that the difference of two input voltages applied into two CCII+ used voltage and current follower converts into same currents, and then these current drive resistor of (+) terminal and feedback resistor of op-amp to obtain output voltage. To verify operating principal of the IA, we designed the CCII+ and used commercial op-amp LF356. Simulation results show that voltage follower used CCII+ has offset voltage of 0.21mV at linear range of ${\pm}$4V. The IA had wide gain range from -20dB to 60dB by variation of only one resistor and -3dB frequency for the gain of 60dB was 400kHz. The IA also has merits without matching of external resistor and controllable offset voltage using the other resistor. The power dissipation of the IA is 130mW at supply voltage of ${\pm}$5V.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.1
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• pp.59-67
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• 2016

A novel instrumentation amplifier (IA) using fully-differential linear operational transconductance amplifier (FLOTA) for electronic measurement systems with low cost, wideband, and gain control with wide range is designed. The IA consists of a FLOTA, two resistor, and an operational amplifier(op-amp). The principal of the operating is that the difference of two input voltages applied into FLOTA converts into two same difference currents, and then these current drive resistor of (+) terminal and feedback resistor of op-amp to obtain output voltage. To verify operating principal of the IA, we designed the FLOTA and realized the IA used commercial op-amp LF356. Simulation results show that the FLOTA has linearity error of 0.1% and offset current of 2.1uA at input dynamic range ${\pm}3.0V$. The IA had wide gain range from -20dB to 60dB by variation of only one resistor and -3dB frequency for the 60dB was 10MHz. The proposed IA also has merits without matching of external resistor and controllable offset voltage using the other resistor. The power dissipation of the IA is 105mW at supply voltage of ${\pm}5V$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.332-335
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• 2000

We fabricated organic electroluminescent (EL) devices with single layer of poly(3-dodeoylthiophene) (P3DoDT) hlended with different amounts of poly(N-vinylcarbazole) (PVK) as a emitting layer. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer, between polymer emitting layer and Al electrode. All of the devices emit orange-red light and it's can be explained that the energy transfer occurs from PVK to P3DoDT. In the voltage-current and voltage-brightness characteristics of devices applied LiF layer, current and brightness increased with increasing applied voltage. The brightness of the device have a molar ratio 1:1 with LiF layer was about 10 times larger than that of the device without PVK at 6V. Electrical impedance properties of ITO/emitting layer/LiF/Al devices were investigated. In the Cole-Cole plots of impedance data, one semicircle was observed. Therefore, the equivalent circuit for the devices can be designed as a single parallel resistor and capacitor network with series resistor.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.557-560
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• 2004

In this study, we design the one-chip PWM IC for SMPS (Switching Mode Power Supply) application. We determine the IC spec. and simulated each block of PWM IC (Reference, Error amp., Comparator, Oscillator) with Smart Spice (SILVACO Circuit Simulation Tool). Reference circuits generate constant voltage(5V) in the various of power supply and temperature condition. Error amp. is designed with large DC gain (${\simeq}65dB$), unity frequency (${\simeq}190kHz$) and large PM($75^{\circ}$).Saw tooth generators operate with 20K oscillation frequency (external resistor, capacitor).

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1451-1453
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• 1994

A monolithic current limiting power MOSFET, which may be easily fabricated by the conventional DMOS process, is proposed. The proposed current limiting MOSFET consists of main power cells, sensing cells, and NPN lateral bipolar transistor so that users can adjust the current limiting levels with only one external resistor. The behaviors of the proposed device are numerically simulated and analyzed by 2-D device simulator MEDICI and mixed-mode simulator CA-AAM(Circuit Analysis Advanced Application Module).

• Carbon letters
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• v.28
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• pp.31-37
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• 2018

This paper examines a simple one-step and catalyst-free method for synthesizing carbon nanoparticles from aliphatic alcohols and n-hexane with linear molecule formations by using a stable solution plasma process with a bipolar pulse and an external resistor. When the external resistor is adopted, it is observed that the current spikes are dramatically decreased, which induced production of a more stable discharge. Six aliphatic linear alcohols (methanol-hexanol) containing carbon with oxygen sources are studied as possible precursors for the massive production of carbon nanoparticles. Additional study is also carried out with the use of n-hexane containing many carbons without an oxygen source in order to enhance the formation of carbon nanoparticles and to eliminate unwanted oxygen effects. The obtained carbon nanoparticles are characterized with field emission-scanning electron microscopy, energy dispersive X-ray spectroscopy, and Raman spectroscopy. The results show that with increasing carbon ratios in alcohol content, the synthesis rate of carbon nanoparticles is increased, whereas the size of the carbon nanoparticles is decreased. Moreover, the degree of graphitization of the carbon nanoparticles synthesized from 1-hexanol and n-hexane with a high carbon (C)/oxygen (O) ratio and low or no oxygen is observed to be greater than that of the carbon nanoparticles synthesized from the corresponding materials with a low C/O ratio.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.54-61
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• 1999

We suggested a macro medel for MOS transistors, which incorporates the distributed substrate resistance by using a method which utilizes external diodes on SPICE MOS model. By fitting the simulated s-parameters to the measures ones, we obtained a model set for the W=200TEX>$\mu\textrm{m}$ and L=0.8TEX>$\mu\textrm{m}$ NMOS transistor, and also analyzed the effects of distributed substrate resistance in the RF range. By comparing the physical parameters calculated from simulated s-parameters such as ac resistances and capacitances with the measured ones, we confirmed the validity of the simulation results. For the frequencies below 10GHz, it seems appropriated to use a simple macro model which utilizes the existing SPICE MOS model with junction diodes, after including one lumped resistor each for gate and substrate nodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.174-174
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• 2014

Memristor devices are one of the most promising candidate approaches to next-generation memory technologies. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. Among these possible choices of signal controlling factors of memristor, photon is particularly attractive because photonic signals are not only easier to reach directly over long distances than electrical signal, but they also efficiently manage the interactions between logic devices without any signal interference. Furthermore, due to the inherent wave characteristics of photons, the facile manipulation of the light ray enables incident light angle controlled memristive switching. So that, in the tautological sense, device orienting position with regard to a photon source determines the occurrence of memristive switching as well. To demonstrate this position controlled memory device functionality, we have fabricated a metal-semiconductor-metal memristive switching nanodevice using ZnO nanorods. Superhydrophobicity employed in this memristor gives rise to illumination direction selectivity as an extra controlling parameter which is important feature in emerging. When light irradiates from a point source in water to the surface treated device, refraction of light ray takes place at the water/air interface because of the optical density differences in two media (water/air). When incident light travels through a higher refractive index medium (water; n=1.33) to lower one (air; n=1), a total reflection occurs for incidence angles over the critical value. Thus, when we watch the submerged NW arrays at the view angles over the critical angle, a mirror-like surface is observed due to the presence of air pocket layer. From this processes, the reversible switching characteristics were verified by modulating the light incident angle between the resistor and memristor.