• Proceedings of the Optical Society of Korea Conference
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• 2007.02a
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• pp.217-218
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• 2007

• Journal of the Optical Society of Korea
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• v.20 no.6
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• pp.733-738
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• 2016

We calculate optical properties of guided modes of a hybrid-guiding photonic crystal fiber. The design and modeling of such hybrid-guiding PCF is made by replacing air holes with inserts of high refractive index material layer by layer in order. The optical properties such as mode intensity profile, mode dispersion, optical birefringence, confinement loss, and chromatic dispersion during transition of the guiding mechanism are analyzed and discussed. The guided modes in the hybrid-guiding region are also compared with those of reference index-guiding and bandgap-guiding photonic crystal fibers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.932-938
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• 2007

The structural, optical, and electrical properties of ZnO thin films grown on glass by radio-frequency (rf) magnetron sputtering were investigated. The mixture flow ratio of $O_2$ to Ar, which was operated with sputtering gas, was chosen as a parameter for growing high-qualify ZnO thin films. The structural properties and surface morphologies of the thin films were characterized by the X-ray diffraction and the atomic force microscope, respectively. As for the optical properties of the films, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of ZnO thin films were calculated from the measured data. The crystallinity of the films was improved and the bandgap energy was increased from 3.08 eV to 3.23 eV as the oxygen flow ratio was increased from 0 % to 50 %. Furthermore, The ultraviolet and violet luminescences were observed by using photoluminescence spectroscopy. The hall mobility was decreased with the increase of oxygen flow ratio.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.39.2-39.2
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• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.

• Journal of the Korean Applied Science and Technology
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• v.30 no.3
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• pp.461-471
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• 2013

Use of low bandgap polymers is the most suitable way to harvest a broader spectrum of solar radiations for solar cells. But, still there is lack of most efficient low bandgap polymer. In order to solve this problem, we have synthesised a new low bandgap polymer and investigated its interaction with the ILs to enhance its conductivity. ILs may undergo almost unlimited structural variations; these structural variations have attracted extensive attention in polymer studies. In addition to this, UV-Vis spectroscopy, confocal Raman spectroscopy and FT-IR spectroscopy results have revealed that all studied ILs (tributylmethylammonium methyl sulfate [$N_{1444}$][$MeSO_4$] from ammonium family) and 1-methylimidazolium chloride ([MIM]Cl, and 1-butyl-3-methylimidazolium chloride [Bmim]Cl from imidazolium family) has potential to interact with polymer. Further, protic ILs shows enhanced conductivity than aprotic ILs with low bandgap polymer. This study provides the combined effect of low bandgap polymer and ILs that may generate many theoretical and experimental opportunities.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.58-63
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• 1995

The effects of substrate temperature, RF power, and $NH_{3}/SiH_{4}$ gas flow ratio on the dielectric constant and optical bandgap of amorphous silicon nitride (a-SiNx:H) thin films prepared by PECVD method using RF glow discharge decomposition of $SiH_{4}$ and $NH_{3}$ gas mixtures have been studied. The dielectric constant and optical bandgap of a-SiNx:H thin films were greatly exchanged as by increasing substrate temperature, RF power, and $NH_{3}/SiH_{4}$ gas flow ratio. The dielectric constant of a-SiNx:H films was increased and optical bandgap of a-SiNx:H films was decreased as the substrate temperature was increased. When the substrate temperature, RF power, gas pressure, $NH_{3}/SiH_{4}$ gas flow ratio, and thickness were $250^{\circ}C$, 20 W, 500 mTorr, 10 and $1500\;{\AA}$, respectively, the dielectric constant, breakdown field and optical bandgap of a-SiNx:H film were 4.3, 1 MV/cm, and 2.9 eV, respectively.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.64-68
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• 2012

We have successfully demonstrated a bandgap alteration of transparent zinc oxide (ZnO) thin film with Mg dopant by using sol-gel spin coating technique. By increasing the dopant from 0 to 30 atomic percent (at.%), a decrement value in the cutoff is observed, where the absorption edge shifts continuously to the shorter wavelength side, towards 300 nm. This resulted in a significant bandgap increment from 3.28 to 3.57 eV. However, the transmittance of the thin film at 350-800 nm gradually downgraded, from 93 to 80 % which is most probably due to the grain size that becomes bigger, and it also affected the electrical properties. The decrement from 45 to 0.05 mA at +10 V was observed in the I-V characteristics, concluding the significant relationship; where higher optical bandgap materials will exhibit lower conductivity. These findings may be useful in optoelectronics devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.3
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• pp.145-152
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• 2003

Electrical gate and drain characteristics of double heterostructure InAlAs/InGaAs pseudomorphic HEMTs have been investigated under sub-bandgap photonic excitation ($hv). Drain $(V_{DS})-,{\;}gate($V_{DS})-$, and optical power($P_{opt}$)-dependent variation of the abnormal gate leakage current and associated physical mechanisms in the PHEMTs have been characterized. Peak gate voltage ($V_{GS,P}$) and the onset voltage for the impact ionization ($V_{GS.II}$) have been extracted and empirical model for their dependence on the $V_{DS}$ and $P_{opt} have been proposed. Anomalous gate and drain current, both under dark and under sub-bandgap photonic excitation, have been modeled as a parallel connection of high performance PHEMT with a poor satellite FET as a parasitic channel. Sub-bandgap photonic characterization, as a function of the optical power with $h\nu=0.799eV$, has been comparatively combined with those under dark condition for characterizing the bell-shaped negative humps in the gate current and subthreshold drain leakage under a large drain bias.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.350.2-350.2
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• 2014

We investigated the structural and optical evolution of Ga2O3 thin films on glass substrates deposited using radio frequency magnetron sputtering. Initially, amorphous Ga2O3 thin film is grown, and then, surface humps and nanowire (NW) bundles are gradually formed as the film thickness increases. The surface humps are Ga-rich and provide nucleation sites for NWs through a self-catalytic vapor-liquid-solid mechanism with self-assembled Ga droplets. Both the surface humps and the NWs induce variation of the optical properties such as the optical bandgap and refractive index by absorbing light in the ultraviolet region.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.164-165
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• 2003

A cholesteric liquid crystal (CLC) system exhibits one-dimensional (1-D) Photonic bandgap (PBG) characteristics in the transmission spectrum through a selective Bragg reflection. Related to the nonlinear optical (NLO) processes in a PBG structure of CLC, the inherent periodicity has been exploited to Phase-match the fundamental and the harmonic waves through the umklapp Processes. Near bandgap edges of a CLC, harmonic generations have been shown to be enhanced significantly through the field localization. (omitted)