• ETRI Journal
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• v.24 no.4
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• pp.259-269
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• 2002

Polymers are emerging as new alternative materials for optical communication devices. We developed two types of polymer-based devices for optical communications. One type is for ultra high-speed signal processing that uses nonlinear optical (NLO) polymers in such devices as electro-optic (EO) Mach-Z${\ddot{e}} $ hnder (MZ) modulators and EO 2${\times}$2 switches. The other is for WDM optical communications that use low-loss optical polymers in such devices as 1${\times}$2, 2${\times}$2, 4-arrayed 2${\times}$2 digital optical switches (DOSs) and 16${\times}$16 arrayed waveguide grating (AWG) routers. For these devices, we synthesized a polyetherimide-disperse red 1 (PEI-DR1) side chain NLO polymer and a low-loss optical polymer known as fluorinated polyaryleneethers (FPAE). This paper presents the details of our development of these polymeric photonic devices considering all aspects from materials to packaging.

• ETRI Journal
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• v.25 no.2
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• pp.81-88
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• 2003

We designed a multimode interference (MMI) coupler to use in vertical coupling of double layered polymeric waveguides and analyzed the coupling characteristics by comparing our experimental and simulation results. We found that our proposed new structure, a stepped MMI coupler, is effective in vertical coupling between waveguide layers with a short length of MMI and has a high tolerance for the variation in the structure of an MMI coupler that can be induced as errors in the fabrication process.

• Polymer Science and Technology
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• v.18 no.2
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• pp.153-158
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• 2007

• Electronics and Telecommunications Trends
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• v.32 no.6
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• pp.8-16
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• 2017

In this paper, we review studies attempting to triumph over the limitation of Si-based semiconductor technologies through a heterogeneous integration of high mobility compound semiconductors on a Si substrate, and the co-integration of electronic and/or optical devices. Many studies have been conducted on the heterogeneous integration of various materials to overcome the Si semiconductor performance and obtain multi-purpose functional devices. On the other hand, many research groups have invented device fusion technologies of electrical and optical devices on a Si substrate. They have co-integrated Si-based CMOS and InGaAs-based optical devices, and Ge-based electrical and optical devices. In addition, chip and wafer bonding techniques through TSV and TOV have been introduced for the co-integration of electrical and optical devices. Such intensive studies will continue to overcome the device-scaling limitation and short-channel effects of a MOS transistor that Si devices have faced using a heterogeneous integration of Si and a high mobility compound semiconductor on the same chip and/or wafer.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1845-1848
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• 2018

We introduce a process for optically reconstructing full-color holographic images recorded by optical scanning holography. A complex RGB-color hologram was recorded and converted into a binary hologram using a direct binary search (DBS) algorithm. The generated binary hologram was then optically reconstructed using a spatial light modulator. The discrepancies between the reconstructed object sizes and colors due to chromatic aberration were corrected by adjusting the reconstruction parameters in the DBS algorithm. To the best of our knowledge, this represents the first optical reconstruction of a full-color hologram recorded by optical scanning holography.

• Current Optics and Photonics
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• v.3 no.5
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• pp.401-407
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• 2019

Polymeric optical waveguide devices with Bragg gratings have been investigated, for implementing tunable lasers and wavelength filters used in wavelength-division-multiplexed optical communication systems. Owing to the excellent thermo-optic effect of these polymers, wavelength tuning is possible over a wide range, which is difficult to achieve using other optical materials. In this study the phase-mask technology, which has advantages over the conventional interferometeric method, was introduced to facilitate the fabrication of Bragg gratings in polymeric optical waveguide devices. An optical setup capable of fabricating multiple Bragg gratings simultaneously on a 4-inch silicon wafer was constructed, using a 442-nm laser and phase mask. During fabrication, some of the diffracted light in the phase mask was totally reflected inside the mask, which affected the quality of the Bragg grating adversely, so experiments were conducted to solve this issue. To verify grating uniformity, two types of wavelength-filtering devices were fabricated using the phase-mask lithography, and their reflection and transmission spectra were measured. From the results, we confirmed that the phase-mask method provides good uniformity, and may be applied for mass production of polymer Bragg-grating waveguide devices.

• Journal of the Optical Society of Korea
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• v.7 no.1
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• pp.28-33
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• 2003

We describe the optimal design and the fabrication of a 2$\times$2 port optical device based on the thin film filter (TFF), and also propose a 4-channel OADM module using these devices. The optical performance of the proposed OADM module is evaluated theoretically and experimentally, and is compared to that of typical OADM modules using 1$\times$2 port optical devices for 4, 8, 16 and 32 drop channels in optical transmission systems. Since the 2$\times$2 port optical device accomplishes the function of wavelength multiplexing and demultiplexing simultaneously in the proposed OADM module, the insertion loss of through channels can be improved by 1.2 dB compare to that of typical OADM modules using 1$\times$2 port optical devices. In addition, both the size and the price of the module can be reduced to 40~50%.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.486-486
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• 2013

Silicon nanowire devices fabricated by bottom-up methods are attracted due to their electrical, mechanical, and optical properties. Especially, to functionalize the surface of silicon nanowires by molecules has received interests. The changes in the characteristics of the molecules is delivered directly to the surface of the silicon nanowires so that the silicon nanowire can be utilized as an efficient read-out device by using the electronic state change of molecules. The surface treatment of the silicon nanowire with light-sensitive molecules can change its optical characteristics greatly. In this paper, we present the optical response of a SiNW field-effect-transistor (FET) conjugated with porphyrin molecules. We fabricated a SiNW FET and performed porphyrin conjugation on its surface. The characteristic and the optical response of the device shows a large difference after conjugation while there is not much change of the surface in the SEM observation. It attributed to the existence of few layer porphyrin molecules on the SiNW surface and efficient variation of the surface potential of the SiNW due to light irradiation.

• Current Optics and Photonics
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• v.6 no.4
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• pp.392-399
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• 2022

Light-measuring devices (LMDs) are frequently used to measure luminance and color coordinates of displays. However, it is very difficult to use a conventional LMD for measuring the optical properties of virtual-reality (VR) devices with a wide field of view (FOV), because of their confined spaces where the entrance pupil of a LMD is located. In this paper, a new LMD that can measure the optical properties of wide-FOV VR devices, without physical conflict with the goggles of the VR device, is proposed. The LMD is designed to fully satisfy the requirements of IEC 63145-20-10, and a pivot-point correction method for the LMD is applied to improve its accuracy. To show the feasibility of the developed LMD and the correction method, seven VR devices with wide FOV are measured with it. From the results, all of them are successfully measured without any physical conflict, and a comparison to their nominal values shows that the FOVs have been properly measured.

• Korean Journal of Optics and Photonics
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• v.17 no.1
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• pp.68-74
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• 2006

We have extracted an optical clock signal from a return-to-zero(RZ) pseudorandom bit sequence(PRBS) and non-return-to-zero(NRZ) PRBS data in a pulsation multi-section laser diode with DFB reflector. The ms timing jitter achieved less than 1 ps for the input 11.727 Gbit/s RZ PRBS and NRZ PRBS data. The PRE data wasconverted from the NRZ data using an NRZ to pseudo-return to zero(PRZ) converter module. The optical clock was extracted from the PRZ data which contains the clock components. Although the input PRZ data gives a timing jitter of 2 ps, the extracted clock has timing jitter of ${\~}$1 ps.