• Title/Summary/Keyword: Organic Semiconductor

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Physical effect of annealing conditions on soluble organic semiconductor for organic thin film transistors

  • Kim, Dong-Woo;Kim, Doo-Hyun;Kim, Keon-Soo;Kim, Hyung-Jin;Lee, Dong-Hyuck;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.268-269
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    • 2008
  • We have examined the effect of physical drying and annealing conditions for the soluble derivatives of polythiophene as p-type channel materials of organic thin film transistors (OTFTs) in our special designed drying system; performances of the jetting-processed OTFTs can be improved more than 10 times just by optimizing the physical conditions of drying and annealing.

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Organic Thin-Film Transistor-driven Current Programming Pixel Circuit for Active-Matrix OLEDs (Organic TFT를 이용한 AM-OLED 구동용 Pixel 보상회로 설계에 관한 연구)

  • Shin, A-Ram;Yoon, Bong-No;Seo, Jun-Ho;Bae, Young-Seok;Sung, Man-Young
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.335-336
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    • 2007
  • A new current-programmed pixel circuit for activematrix organic light emitting diodes (AMOLEDs), based on Organic TFTs (OTFTs), is proposed and verified by SPICE simulations. The simulation results show that the proposed pixel circuit, which is a current mirror structure consisting of five Organic TFTs and one capacitor, has reliable linear characteristics between input current and output OLED current. Also, the threshold voltage degradation of Organic TFTs due to long time operation stress is well compensated to reliable values.

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Improvement of Out-coupling Efficiency of Organic Light Emitting Device by Ion-beam Plasma-treated Plastic Substrate (이온빔 플라즈마 처리된 플라스틱 기판에 의한 OLED의 광추출 효율 향상)

  • Kim, Hyeun Woo;Song, Tae Min;Lee, Hyeong Jun;Jeon, Yongmin;Kwon, Jeong Hyun
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.2
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    • pp.7-10
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    • 2022
  • A functional polyethylene terephthalate substrate to increase light extraction efficiency of organic light-emitting diodes is studied. We formed nano-structured PET surfaces by controlling the power, gas, and exposure time of the linear ion-beam. The haze of the polyethylene terephthalate can be controlled from 0.2% to 76.0% by changing the peak-to-valley roughness of nano structure by adjusting the exposure cycle. The treated polyethylene terephthalate shows average haze of 76.0%, average total transmittance of 86.6%. The functional PET increases the current efficiency of organic light-emitting diodes by 47% compared to that of organic light-emitting diode on bare polyethylene terephthalate. In addition to polyethylene terephthalate with light extraction performance, by conducting additional research on the development of functional PET with anti-reflection and barrier performance, it will be possible to develop flexible substrates suitable for organic light-emitting diodes lighting and transparent flexible displays.

Fabrication of Scattering Layer for Light Extraction Efficiency of OLEDs (RIE 공정을 이용한 유기발광다이오드의 광 산란층 제작)

  • Bae, Eun Jeong;Jang, Eun Bi;Choi, Geun Su;Seo, Ga Eun;Jang, Seung Mi;Park, Young Wook
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.1
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    • pp.95-102
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    • 2022
  • Since the organic light-emitting diodes (OLEDs) have been widely investigated as next-generation displays, it has been successfully commercialized as a flexible and rollable display. However, there is still wide room and demand to improve the device characteristics such as power efficiency and lifetime. To solve this issue, there has been a wide research effort, and among them, the internal and the external light extraction techniques have been attracted in this research field by its fascinating characteristic of material independence. In this study, a micro-nano composite structured external light extraction layer was demonstrated. A reactive ion etching (RIE) process was performed on the surfaces of hexagonally packed hemisphere micro-lens array (MLA) and randomly distributed sphere diffusing films to form micro-nano composite structures. Random nanostructures of different sizes were fabricated by controlling the processing time of the O2 / CHF3 plasma. The fabricated device using a micro-nano composite external light extraction layer showed 1.38X improved external quantum efficiency compared to the reference device. The results prove that the external light extraction efficiency is improved by applying the micro-nano composite structure on conventional MLA fabricated through a simple process.

Triple Layer Passivation for Organic Thin-Film Transistors

  • Ryoo, Ki-Hyun;Lee, Cheon-An;Jin, Sung-Hun;Jung, Keum-Dong;Park, Chang-Bum;Lee, Jong-Duk;Shin, Hyung-Cheol;Park, Byung-Gook
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1310-1312
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    • 2005
  • Passivation of organic thin-film transistors (OTFTs) using organic and metal thin-film was presented. Parylene-C and titanium were used as an organic and metal layer, respectively. With the proposed passivation method the degradation of electric parameters of OTFTs was relieved compared with non-passivated devices. Several electric parameters such as on/off current, field-effect mobility, and threshold voltage were shown.

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Improvement of source-drain contact properties of organic thin-film transistors by metal oxide and molybdenum double layer

  • Kim, Keon-Soo;Kim, Dong-Woo;Kim, Doo-Hyun;Kim, Hyung-Jin;Lee, Dong-Hyuck;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.270-271
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    • 2008
  • The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

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Effects of Process Induced Damages on Organic Gate Dielectrics of Organic Thin-Film Transistors

  • Kim, Doo-Hyun;Kim, D.W.;Kim, K.S.;Moon, J.S.;KIM, H.J.;Kim, D.C.;Oh, K.S.;Lee, B.J.;You, S.J.;Choi, S.W.;Park, Y.C.;Kim, B.S.;Shin, J.H.;Kim, Y.M.;Shin, S.S.;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1220-1224
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    • 2007
  • The effects of plasma damages to the organic thin film transistor (OTFT) during the fabrication process are investigated; metal deposition process on the organic gate insulator by plasma sputtering mainly generates the process induced damages of bottom contact structured OTFTs. For this study, various deposition methods (thermal evaporation, plasma sputtering, and neutral beam based sputtering) and metals (gold and Indium-Tin Oxide) have been tested for their damage effects onto the Poly 4-vinylphenol(PVP) layer surface as an organic gate insulator. The surface damages are estimated by measuring surface energies and grain shapes of organic semiconductor on the gate insulator. Unlike thermal evaporation and neutral beam based sputtering, conventional plasma sputtering process induces serious damages onto the organic surface as increasing surface energy, decreasing grain sizes, and degrading TFT performance.

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Study of Plasma Process Induced Damages on Metal Oxides as Buffer Layer for Inverted Top Emission Organic Light Emitting Diodes

  • Kim, Joo-Hyung;Lee, You-Jong;Jang, Jin-Nyoung;Song, Byoung-Chul;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.543-544
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    • 2008
  • In the fabrication of inverted top emission organic light emitting diodes (ITOLEDs), the organic layers are damaged by high-energy plasma sputtering process for transparent top anode. In this study, the plasma process induced damages on metal oxide hole injection layers (HILs) including $WO_3$, $MoO_3$, and $V_2O_5$ as buffer layer are examined. With the result of IV characteristic of hole-only devices, we propose that $MoO_3$ and $V_2O_5$ are stable materials against plasma sputtering process.

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Recent Advance of Flexible Organic Memory Device

  • Kim, Jaeyong;Hung, Tran Quang;Kim, Choongik
    • Journal of Semiconductor Engineering
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    • v.1 no.1
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    • pp.38-45
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    • 2020
  • With the recent emergence of foldable electronic devices, interest in flexible organic memory is significantly growing. There are three types of flexible organic memory that have been researched so far: floating-gate (FG) memory, ferroelectric field-effect-transistor (FeFET) memory, and resistive memory. Herein, performance parameters and operation mechanisms of each type of memory device are introduced, along with a brief summarization of recent research progress in flexible organic memory.

Analysis of Fluid Flow in the Linear Cell Source for Organic Semiconductor Thin Film Deposition (유기반도체 박막증착을 위한 선형증착원의 유체유동해석)

  • Kwak, In-Chul;Yang, Young-Soo;Choi, Bum-Ho;Kim, Young-Mi
    • Journal of the Korean Society for Precision Engineering
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    • v.26 no.10
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    • pp.74-80
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    • 2009
  • This paper presents a study on fluid flow analysis of organic semiconductor thin film deposition process using the computational numerical method. In the production process, the thickness of deposited organic thin film depends on distribution of nozzle size in the linear cell system, so we analyze to decide the optimal nozzle system for uniform thickness of organic thin film. The results of deposited thickness of thin film by numerical analysis are in good agreement with those of the experimental measurements.