• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.7-10
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• 2011

High voltage (HV) integrated circuits are viable alternatives to discrete circuits in a wide variety of applications. A HV device generally used in these circuits is a lateral double diffused metal oxide semiconductor (LDMOS) transistor. Attempts to model LDMOS devices are complicated by the existence of the lightly doped drain and by the extension of the poly-silicon and the gate oxide. Several physically based investigations of the bias-dependent drift resistance of HV devices have been conducted, but a complete physical model has not been reported. We propose a new technique to model HV devices using both the BSIM3 SPICE model and a bias dependent resistor model (sub-circuit macro model).

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1105-1106
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• 2008

Staggered type self-aligned transparent-oxide-semiconductor transistors with indium-zinc-oxide as a semiconductor have studied. In this device fabrication, successive sputtering of oxide semiconductor and insulator without breaking of vacuum and without exposing in air, humidity and oxygen can be realized because oxide semiconductor is transparent. As a result of fabrication, transistor characteristics with mobility of $30cm^2/Vs$ and on-off ratio of $10^5$ could be obtained for the newly developed self-alignment device structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.270-271
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• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.534-536
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• 2009

We have fabricated solution-processed zinc-tin oxide thin film transistors (TFTs) and simple circuits on glass substrates. We report a solutionprocessed zinc-tin oxide TFTs on silicon wafer with mobility greater than 9 $cm^2/V{\cdot}s$ (W/L = 100/5 ${\mu}m$) and threshold voltage variation of less than 1 V after bias-stressing. Also, we fabricated solution-processed zinc-tin oxide circuits including inverters and 7-stage ring oscillators fabricated on glass substrates using the developed zinc-tin oxide TFTs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.45-51
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• 2004

We have proposed a new shallow trench isolation (STI) process using flowable oxide (F-oxide) chemical vapor deposition (CVD) for DRAM application and it was successfully developed. The combination of F-oxide CVD and HDP CVD is thought to be the superior STI gap-filling process for next generation DRAM fabrication because F-oxide not only improves STI gap-filling capability, but also the reduced local stress by F-oxide in narrow trenches leads to decrease in junction leakage and gate induced drain leakage (GIDL) current. Finally, this process increased data retention time of DRAM compared to HDP STI. However, a serious failure occurred by symphonizing its structural dependency of deposited thickness with poor resistance against HF chemicals. It could be suppressed by reducing the flow time during F-oxide deposition. It was investigated collectively in terms of device yield. In conclusion, the combination of F-oxide and HDP oxide is the very promising technology for STI gap filling process of sub-100nm DRAM technology.

• Ceramist
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• v.21 no.1
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• pp.44-54
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• 2018

Oxide semiconductor has been spotlighted as a channel material of TFTs in AMLCD as an alternative to Si, due to high mobility ( > $5cm^2/Vs$). It is also one of the strong candidates for TFTs in AMOLED because of high bias stability at amorphous phase. Beyond the advantages mentioned above, oxide semiconductor has many strengths such as transparency, low fabrication temperature and relatively low fabrication cost. For those reasons, the application of oxide semiconductor is not limited to display but can be extended to new types of electronics, for example, transient electronics for human implantable devices. From this context, oxide materials that have been used as semiconductor and insulator at transient electronics are investigated respectively, and conductor and substrate candidates are also explained, since transient electronics require systematic consideration beyond individual oxide films.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1047-1050
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• 2009

The two approaches to improve the stability of oxide TFTs are described. First approach is the optimization of device architecture including MIS structure and passivation layer using conventional InGaZnO semiconductor channel layer. Second approach is to develop the new kinds of oxide semiconductor materials, which is very robust and stable against the gate bias stress and thermal stress.

• Journal of Electrical Engineering and Technology
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• v.2 no.3
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• pp.408-412
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• 2007

It is almost impossible to secure the reproductibility and stability of a commercial Thick-Film Metal Oxide Semiconductor Gas Sensor since it is very difficult to keep the consistency of the manufacturing environment. Thus it is widely known that the general Semiconductor-Oxide Gas Sensors are not appropriate for precise measurement systems. In this paper, the output characteristic analyzer of the various Thick-Film Metal Oxide Semiconductor Gas Sensors that are used to recognize the air quality within an automobile are proposed and examined. The analyzed output characters in a normal air chamber are grouped by sensor ranks and used to fill out the characteristic table of the Thick-Film Metal Oxide Semiconductor Gas Sensors. The characteristic table is used to determine the rank of the sensor that is equipped in the current air cleaner system of an automobile. The proposed air control system can also adapt the on-demand operation that recognizes the history of the passenger's manual-control.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.16-19
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• 2011

The oxide-nitride-oxide (ONO) deposition process was added to the beginning of a 0.25 ${\mu}m$ embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic well implantation processes in order to maintain the characteristics of basic CMOS(complementary metal-oxide semiconductor) logic technology. The system subsequently suffered severe ONO rupture failure. The damage was caused by the ONO implantation and was responsible for the ONO rupture failure in the embedded SONOS process. Furthermore, based on the experimental results as well as an implanted ion's energy loss model, processes primarily producing permanent displacement damages responsible for the ONO rupture failure were investigated for the embedded SONOS process.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.254-259
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• 2015

This paper reports the optimized mixed-signal performance of a high-voltage (HV) laterally double-diffused metaloxide-semiconductor (LDMOS) field-effect transistor (FET) with a dual gate oxide (DGOX). The fabricated device is based on the split-gate FET concept. In addition, the gate oxide on the source-side channel is thicker than that on the drain-side channel. The experiment results showed that the electrical characteristics are strongly dependent on the source-side channel length with a thick gate oxide. The digital and analog performances according to the source-side channel length of the DGOX LDMOS device were examined for circuit applications. The HV DGOX device with various source-side channel lengths showed reduced by maximum 37% on-resistance (R_ON) and 50% drain conductance (g_ds). Therefore, the optimized mixed-signal performance of the HV DGOX device can be obtained when the source-side channel length with a thick gate oxide is shorter than half of the channel length.