• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.2
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• pp.90-96
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• 1985

The properties of plasma-enhanced CVD phosphorous silicate glass (PECVD PSG) for passivation layer are studied . Phosphorous contentration was analyzed with X-ray fluores-cence. As a result, PECVD PSG has a limiting phosphors concentration of about 8 mole%. Curves relating to etcll rate, infrared absorption ratio, and sheet resistivity were adapted to monitor phosphorous concentration indirectly Dielectric properties, step coverage, crack resistance, and gettering effect are discussed in both of atmospheric pressure CVD (APCVO) and PECVD oxide. PECVD SiO2 film have density of about 2.4 g/㎤ at deposition rate of 450$\AA$/min, refractive index of about 1.53, and breakdown at fields of II-13 MV/cm. Crack resistance of PECVD oxide is greater than APCVD oxide. PECVD PSG films contained with 2 mole % phosphorous show good step coverage and gettering ability. The obtained results show more advantages in PECVD PSG than in APCVD PSG for device passivation.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.46-46
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• 1994

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.601-608
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• 1994

Aluminum oxide thin films were deposited on p-type(100) silicon substrates by electron cyclotron resonance plasma enhanced CVD(ECR-PECVD) using TMA[Al(CH3)3] and oxygen as reactant gases at 16$0^{\circ}C$ or lower temperatures. The aluminum oxide films deposited by ECR-PECVD have the amorphous structure with the refractive index of 1.62~1.64 and the O/Al ratio of 1.6~1.7. Oxygen flow rate necessary for the stable deposition of the aluminum oxide films increases as the deposition temperature increases. It was found from the OES analysis that the ECR plasma had les cooling effect by introducing the TMA reactant gas in comparison with the RF plasma. The properties of aluminum oxide films prepared by ECR-PECVD were compared with those prepared by RF-PECVD. The ECR-PECVD aluminum oxide films have the higher refractive indices, the lower contents of impurities (H and C) and the stronger wet etch resistance than those deposited by RF-PECVD.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.9-17
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• 1996

Plasma enhanced chemical vapor deposition (PECVD) allows low temperature processing and so it is widely used, but it causes instability of devices due to serious amount of impurities within the film. In this paper, electrical and chemical characteristics of the PECVD oxynitride film formed by different N$_{2}$O to N$_{2}$O+NH$_{3}$ gas ratio is studied. It has been found that hydrogen concentration of PECVD oxynitride film was decreased from 4.25*10$^{22}$ [cm$^{-2}$ ] to 1.18*10$^{21}$ [cm$^{-2}$ ] according to the increase of N$_{2}$O gas. It was also found that PECVD oxynitride films have low trap density in the oxide and interface in comparison with PECVD nitroxide films, and has higher refractive index and capacitance than oxide films. In particular, oxynitride film formed in gas ratio of N$_{2}$O/(N$_{2}$O+NH$_{3}$)= 0.88 shows increased capacitance and decreased leakage current due to small portion of hydrogen in oxide and the accumulation of nitrogen about 4[atm.%] at the interface.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.63-70
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• 1992

Deposition properties and film characteristics of Remote PECVD silicon dioxide were investigated. Using $N_{2}O/SiH_{4}$, the effects of changing the process conditions` the pressure, the substrate temperature, and the gas mixing ration, on the film quality were observed. A comparison of film qualites of the Remote PECVD SiO$_2$ with that of a Direct PECVD SiO$_2$ was made. The experimental results show that the Remote PECVD SiO$_2$ has better electrical, physical, and annealing properties than the Direct PECVD oxide.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.21-25
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• 2014

The silicon nitride ($SiN_x$) film for surface passivation and anti-reflection coating of crystalline silicon solar cell is very important and it is generally deposited by plasma enhanced chemical vapor deposition (PECVD). PECVD can be divided into low and high frequency method. In this paper, the $SiN_x$ film deposited by low and high frequency PECVD method was studied. First, to optimize the $SiN_x$ film deposited by low frequency PECVD method, the refractive index was measured by varying the process conditions like $SiH_4$, $NH_3$, $N_2$ gas rate, and RF power. When $SiH_4$ gas rate was increased and $NH_3$ gas rate was decreased, the refractive index was increased. The refractive index was also increased with RF power decline. Second, to compare the characteristics of the low and high frequency PECVD $SiN_x$ film, the refractive index was measured by varying $NH_3/SiH_4$ gas ratio and RF power and the minority carrier lifetime of before and after high temperature treatment process was also measured. The refractive index of both low and high frequency PECVD $SiN_x$ film was decreased with increase in $NH_3/SiH_4$ gas ratio and RF power. After high temperature treatment process, the minority carrier lifetime of both low and high frequency PECVD $SiN_x$ film was increased and increased degree was similar. The minority carrier lifetime of low frequency PECVD $SiN_x$ was increased from $11.03{\mu}m$ to $28.24{\mu}m$ and that of high frequency PECVD $SiN_x$ was increased from $11.60{\mu}m$ to $27.10{\mu}m$.

• 전기의세계
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• v.32 no.10
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• pp.616-625
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• 1983

본고에서는 PECVD의 기본원리와 장치를 간단히 설명한 후, 현재까지 PECVD법에 의해 형성된 박막중 반도체소자에의 적용을 위해 광범위하게 연구개발이 진행되고 있는 plasma silicon nitride (이하 PD SiN)와 plasma silicon dioxide (or oxide) (이하 PD SiO$_{2}$)막의 특성에 대해 현재까지의 연구결과를 중심으로 PECVD막의 성질을 고찰하고, 반도체 소자에의 응용을 검토한다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.172-177
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• 1996

We have characterized XeCl excimer-laser-induced crystallization of thin amorphous silicon films deposited by PECVD (${\alpha}$-Si:H) and LPCVD (${\alpha}$-Si). The electrical properties, surface roughness and crystallinity of crystallized thin films have been measured. The dc conductivities, crystallinity andsurface roughness of the films increased as the laser energy density and shot density were increased. The properties of laser annealed films deposited by LPCVD were better than those of thin films deposite by PECVD. We have also found that the multiple shots with relative low energy density were more benifical to the improsvement of surface roughness than the single shot with high energy density preserving the crystallinity.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.194-200
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• 2000

Sb-doped tin oxide films were deposited on Corning glass 1737 substrate by plasma enhanced chemical vapor deposition(PECVD) technique using a gas mixture of SnCl4/SbCl5/O2/Ar. The deposition behaviors of tin oxide films by PECVD were compared with those by thermal CVD, and effects of deposition temperature, r.f. power and Sb doping on the electrical properties of tin oxide films were investigated. PECVD technique largely increased the deposition rate and smoothed the surface of tin oxide films compared with thermal CVD. Electrical resistivity decreased with doping of Sb due to the increase of carrier concentration. However, large doping of Sb diminished carrier concentration and mobility due to the decrease of crystallinity, which resulted in the increase of electrical resistivity. As the deposition temperature and r.f. power increased, Cl content in the film decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.412-415
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• 2003

[ $Si_3N_4$ ] thin film is the good material to fabricate the capacitors at MMIC processes. Normally, $Si_3N_4$ thin films is used to dielectric in the MIM capacitor and film thickness is $2000\;{\AA}$. Insulator(or dielectric) was deposited by PECVD at our MIM structure with air bridge which connect between top metal and contact pad. We optimized PECVD process to fabricate the good capacitors which can be applied at the true MMIC. The thickness of our $Si_3N_4$ thin films was $1000\;{\AA}$ shallower than $2000\;{\AA}$, and their breakdown voltages were above 70V.