• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.123-124
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• 2006

본 연구에서는 KOH 용액을 사용한 Si 습식 이방성 식각실험 진행 후, 나타나는 표면의 거친 현상을 완화하는 데에 중점을 두고 연구를 진행하였다. 이를 위해 $SiO_2$ 웨이퍼 위에 Photo-lithography 공정으로 형성시킨 PMER 패턴을 Mask로 사용하여 HF 용액으로 $SiO_2$를 식각시켰으며, 형성된 $SiO_2$를 Mask로 사용하여 KOH 용액으로 Si을 식각시켰다. 이 때, KOH와 혼합하는 용액으로 IPA와 Ethan이을 각각 사용하여 실험을 진행하였으며, ESEM을 이용하여 표면을 비교하였다.

• Journal of the Semiconductor & Display Technology
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• v.3 no.1
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• pp.27-30
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• 2004

In this work, the variation of the sidewall profile of a thick photoresist on the wavelength and proximity gap was investigated. PMER P-LA900PM, DNQ (DiazoNaphthoQuinone) novolac type photoresist, is used for experiments. The calculated results agreed well with the experimental results.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.2 s.39
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• pp.9-13
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• 2006

The copper lines in COF are usually fabricated by subtractive method. As the width of lines are smaller, the subtractive method has a lateral etching problems. In semi-additive method, copper lines are fabricated by lithographic technique followed by electroplating method. Fine line patterns of $10-40{\mu}m$ were used for this study. Two different types of thick photoresist, AZ4620 and PMER900, were employed for PR mold. Copper lines were fabricated by electroplating method. The crack were found in fine copper lines due to high residual stress when normal copper electroplating bath were used. The via filling copper electroplating bath were replaced the normal electroplating bath and then cracks were not found in the fine copper lines. During substrate etching, the lateral etching of copper lines were not occurred.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1050-1053
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• 2002

This paper presents metal structure that is fabricated using UV-LIGA process with PMER N-CA3000. In order to fabricate metal structure with high aspect ratio, the systematic optimization method was adopted and then the structure of $36{\mu}m$ thick mold with aspect ratio 7:1 (trench) and $32{\mu}m$ thick nickel structure was obtained. This structure is applied to the fabrication of optical switch.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1914-1917
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• 2001

3D Feed Horn Shape MEMS Antenna Array는 적외선 이미지 소자 또는 Tera hertz band 등에서 많은 응용을 할 수 있는 장점을 가진 MEMS 구조체 이다. 하지만 일반적인 MEMS 공정을 이용해서 3D Feed Horn Shape MEMS antenna array를 구현하기는 적합하지 않았다. 본 논문에서는 마스크와 웨이퍼가 일체 된 형태의 경사된 척이 초 저속으로 회전하면서 노광을 할 수 있는 새로운 방식과 미러 반사구조를 이용해서 평행광을 얻을수 있는 노광장치 (MRPBI : Mirror Reflected Parallel Beam Illuminator) System제작방법을 제안하였다. 3D Feed Horn Shape MEMS Antenna의 구조적인 high apect ratio의 특성에 의해서 SU-8과 PMER Negative Photo resist를 이용한 기본적인 실험을 통해 3D 구조체의 구현 가능성을 증명하였다. 또한 Microbolometer의 성능향상을 위한 이론적인 3D MEMS Antenna Model들을 HFSS(High Frequency Structure Simulator)을 이용해서 그 최적구조를 제안하고 3D MEMS Antenna Gain 값을 비교 분석하였다.

• Laser Solutions
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• v.3 no.2
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• pp.35-43
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• 2000

Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• International Journal of Precision Engineering and Manufacturing
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• v.3 no.1
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• pp.26-32
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• 2002

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on the gravure printing roll. The selective laser hardening of the photoresist by Ar-ion laser(wavelength: 333.6∼363.8 nm) was controlled by the A/O modulator. The coating thickness in the range of 5∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines farmed under the laser power of 200∼260mW and irradiation time of 4.4∼6.6 $\mu$ sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line width of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.11
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• pp.191-198
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• 2000

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength: 333.6~363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5~11$\mu m$ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under the laser power of 200~260㎽ and irradiation time of 4.4~6.6 $\mu$sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10$\mu m$ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6$\mu m$ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.