• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.9 no.4
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• pp.141-146
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• 2010

In this paper, bandgap reference PTAT(Proportional to Absolute Temperature) circuit and flexible gain control of LNA(Low Noise Amplifier) which is usable in Zigbee system of 2.4GHz band are designed by TSMC $0.18{\mu}m$ CMOS library. PTAT bandgap reference circuit is proposed to minimize the instability of CMOS circuit which may be unstable in temperature changes. This circuit is designed such that output voltage remains within 1.3V even when the temperature varies from $-40^{\circ}C$ to $-50^{\circ}C$ when applied to the gate bias voltage of LNA. In addition, the LNA is designed to be operated on 2.4GHz which is applicable to Zigbee system and able to select gains by changing output impedance using 4 NMOS operated switches. The simulation result shows that achieved gain is 14.3~17.6dB and NF (Noise Figure) 1.008~1.032dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.378-384
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• 2013

In this paper, a CMOS temperature sensor is proposed to measure the internal temperature of a chip. The temperature sensor consists of a proportional-to-absolute-temperature (PTAT) circuit for a temperature sensing part and a 4-bit analog-to-digital converter (ADC) for a digital interface. The PTAT circuit with the compact area is designed by using a vertical PNP architecture in the CMOS process. To reduce sensitivity of temperature variation in the digital interface circuit of the proposed temperature sensor, a 4-bit successive approximation (SA) ADC using the minimum analog circuits is used. It uses a capacitor-based digital-to-analog converter and a time-domain comparator to minimize power consumption. The proposed temperature sensor was fabricated by using a $0.25{\mu}m$ 1-poly 6-metal CMOS process with a 2.5V supply, and its operating temperature range is from 50 to $150^{\circ}C$. The area and power consumption of the fabricated temperature sensor are $130{\times}390{\mu}m^2$ and $868{\mu}W$, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.448-451
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• 2011

SoC에서 칩 내부의 온도를 측정하기 위한 proportional-to-absolute-temperature (PTAT) 회로와 sensing 된 아날로그 신호를 디지털로 변환하기 위해 4-bit analog-to-digital converter (ADC)로 구성된 temperature sensor를 제안한다. CMOS 공정에서 vertical PNP 구조를 이용하여 PTAT 회로가 설계되었다. 온도변화에 둔감한 ADC를 구현하기 위해 아날로그 회로를 최소로 사용하는 successive approximation (SA) ADC가 이용되었다. 4-bit SA ADC는 capacitor DAC와 time-domain 비교기를 이용함으로 전력소모를 최소화하였다. 제안된 temperature sensor는 2.5V $0.25{\mu}m$ 1-poly 9-metal CMOS 공정을 이용하여 설계되었고, $50{\sim}150^{\circ}C$ 온도 범위에서 동작한다. Temperature sensor의 면적과 전력 소모는 각각 $130{\times}390\;um^2$과 868 uW이다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.79-85
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• 2009

In this paper, an accurate current reference using temperature and process compensation current mirror (TPC-CM) is proposed. The temperature independent reference current is generated by summing a proportional to absolute temperature (PTAT) current and a complementary to absolute temperature (CTAT) current. However, the temperature coefficient and magnitude of the reference current are influenced by the process variation. To calibrate the process variation, the proposed TPC-CM uses two binary weighted current mirrors which control the temperature coefficient and magnitude of the reference current. After the PTAT and CTAT current is measured, the switch codes of the TPC-CM is fixed in order that the magnitude of reference current is independent to temperature. And, the codes are stored in the non-volatile memory. In the simulation, the effect of the process variation is reduced to 0.52% from 19.7% after the calibration using a TPC-CM in chip-by-chip. A current reference chip is fabricated with a 3.3V 0.35um CMOS process. The measured calibrated reference current has 0.42% variation for $20^{\circ}$C${\sim}$100$^{\circ}$C.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.29-34
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• 2017

A CMOS-based temperature sensor is proposed for low-voltage and low-power on-chip thermal monitoring applications. The proposed temperature sensor converts a proportional to absolute temperature (PTAT) current to a PTAT frequency using an integrator and hysteresis comparator. In addition, it operates in the subthreshold region, allowing reduced power consumption. The proposed temperature sensor was fabricated in a standard 90 nm CMOS technology. Measurement results of the proposed temperature sensor show a temperature error of between -0.81 and $+0.94^{\circ}C$ in the temperature range of 0 to $70^{\circ}C$ after one-point calibration at $30^{\circ}C$, with a temperature coefficient of $218Hz/^{\circ}C$. Moreover, the measured energy of the proposed temperature sensor is 36 pJ per conversion, the lowest compared to prior works.

• Journal of the Korean Society of Physical Medicine
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• v.15 no.4
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• pp.1-9
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• 2020

PURPOSE: The current generation has shortened hamstrings due to a sedentary lifestyle, resulting in reduced flexibility of the hamstring and dysfunction. This study was undertaken to compare effects of three different release exercises on hamstring flexibility, in participants with short hamstrings. METHODS: Totally, 20 subjects having short hamstrings were involved in this study. The inclusion criterion for study participation was active knee extension test (AKET) less than 60°. All participants were subjected to 3 methods: hamstring foam roller release (HFRR), sitting self myofascial release (sitting SMR), and standing self myofascial release (Standing SMR). All participants randomly performed all three methods to avoid bias caused by learning or fatigue. Passive knee extension test (PKET), AKET, finger to floor distance test (FTFT), and pelvic tilting angle test (PTAT) were measured pre- and post-exercises. RESULTS: The PKET, AKET and FTFT were significantly increased after HFRR, sitting SMR, and standing SMR exercise (p < .05). However, PTAT was not significantly increased after the three exercises (p > .05). Furthermore, no significant differences were observed between PKET, AKET, FTFT and PTAT subsequent to HFRR, sitting SMR, and standing SMR (p > .05). CONCLUSION: Our results indicate that HFRR, sitting SMR and standing SMR were immediately effective in improving hamstring flexibility in participants with short hamstrings.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.593-594
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• 2008

In this article, process voltage temperature (PVT) compensated on-chip oscillator is implemented by using proportional to absolute temperature (PTAT) circuit and process compensator. Process compensator circuit based on current subtracter and PTAT circuit are proposed for compensation of oscillation frequency to cope with process variation and temperature variation. All circuit can operate in the range of $3.5{\sim}5\;V$ supply voltage. It can be applied to PVT insensitive low frequency clock reference generator.

• Journal of IKEEE
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• v.20 no.2
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• pp.192-195
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• 2016

In this paper, we present a nanopower CMOS bandgap voltage reference working in sub-threshold region without resisters and bipolar junction transistors (BJT). Complimentary to absolute temperature (CTAT) voltage generator was realized by using two n-MOSFET pair with body bias circuit to make a sufficient amount of CTAT voltage. Proportional to absolute temperature (PTAT) voltage was generated from differential amplifier by using different aspect ratio of input MOSFET pair. The proposed circuits eliminate the use of resisters and BJTs for the operation in a sub-1V low supply voltage and for small die area. The circuits are implemented in 0.18um standard CMOS process. The simulation results show that the proposed sub-BGR generates a reference voltage of 290mV, obtaining temperature coefficient of 92 ppm/$^{\circ}C$ in -20 to $120^{\circ}C$ temperature range. The circuits consume 15.7nW at 0.63V supply.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.838-841
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• 2012

To avoid the damage to circuit and performance degradation by temperature changes, temperature sensing circuit applicable to the IC is proposed in this paper. Temperature sensing is executed by PTAT circuit and power saving mode is activated by internal switch if internal temperature is in high. Also, characteristics of current matching are increased by using current mirror and cascode circuits. From the simulation results, this circuit is operating in action mode if input signal is in low. But it immediately goes into power saving mode if output signal is in high. It shows the output voltage of 1V at $75^{\circ}C$ and 1.75V at $125^{\circ}C$ in action mode and near 0 V(0V~ 7uV) in power saving mode.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.10
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• pp.1-6
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• 2007

Wireless Self-Powered Temperature Sensor for UHF Sensor Tags which are basic device for construction of ubiquitous sensor network is proposed. The key parameters of the target specification are resolution of $0.1\;^{\circ}C$ per output bit, below 1.5 V of operating voltage and below 5 uW of power consumption during sensing operation. Temperature sensor circuit consists of PTAT current generator, band gap reference circuit generating both reference voltage and current, Sigma-Delta Converter, and Digital Counter. Simulated maximum resolution was $0.23\;^{\circ}C/bit$ in 11-bit output. The proposed temperature sensor was fabricated by using a 0.25 m CMOS process. The chip area is $0.32\;{\times}\;0.22\;mm$ and the operating frequency is 2 MHz. Measured resolution from fabricated temperature sensor was $4\;^{\circ}C/bit$ in 8-bit output for the temperature range from $10^{\circ}C$ to $80^{\circ}C$.