• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.3
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• pp.195-203
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• 2020

This paper presents a parasitic inductance reduction design method for the stable driving of GaN HEMT. To reduce the parasitic inductance, we propose a vertical lattice loop structure with multiple loops that is not affected by the GaN HEMT package. The proposed vertical lattice loop structure selects the reference loop and designs the same loop as the reference loop by layering. The design reverses the current direction of adjacent current paths, increasing magnetic flux cancellation to reduce parasitic inductance. In this study, we validate the effectiveness of the parasitic inductance reduction method of the proposed vertical lattice loop structure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.706-713
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• 2010

In this paper, the small loop antenna with a parasitic loop structure for penta-band mobile phone application is proposed. This antenna is composed of a feed monopole, a radiating loop antenna with a parasitic loop structure and an additional radiating element. The antenna is printed on the very thin flexible substrate to mount on the dielectric carrier with a volume of 40 mm$\times$11 mm$\times$3 mm. The bandwidth of the proposed antenna is 402 MHz(773~1,175 MHz) for low band and 583 MHz(1,622~2,205 MHz) for high band. As a result, the proposed antenna covers the five bands of GSM850, GSM900, DCS1800, PCS1,900 and WCDMA for a 3:1 VSWR. Moreover, the radiation pattern, gain and efficiency are appropriate for mobile handset. Therefore, this antenna is suitable for small sized multi-band mobile handset applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.6
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• pp.550-557
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• 2003

In this paper, two dualband internal antennas for GPS/PCS handset are proposed. At first, the monopole antenna with parasitic dipole element is designed to print PCB of handset directly. At second, the antenna with bended loop structure is designed to bend to use internal space of handset maximumly. The proposed dualband internal antennas provide a 2:1 VSWR bandwidth of over 19.1 % which are possible to cover two bands at once. the antennas have a gain between -0.4 and 3.33 ㏈i at all bands and they have almost omni-directional patterns.

• Journal of Power Electronics
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• v.13 no.6
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• pp.964-974
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• 2013

A modified direct torque control (DTC) method based on torque angle is proposed for interior permanent-magnet synchronous motor (IPMSM) drivers used in electric vehicles (EVs). Given the close relationship between torque and torque angle, proper voltage vectors are selected by the proposed DTC method to change the torque angle rapidly and regulate the torque quickly. The amplitude and angle of the voltage vectors are determined by the torque loop and stator flux-linkage loop, respectively, with the help of the position of the stator flux linkage. Furthermore, to satisfy the torque performance request of EVs, the nonlinear dead-time of the invertor caused by parasitic capacitances is considered and compensated to improve steady torque performance. The stable operation region of the IPMSM DTC driver for voltage and current limits is investigated for reliability. The experimental results prove that the proposed DTC has good torque performance with a brief control structure.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.536-540
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• 1999

We have developed a refractory WNx self-aligned gate GaAs metal-semiconductor field-effect transistor(MESFET) using $SiO_2$ side-wall process. The MESFET hasa fully ion-implanted, planar, symmetric self-alignment structure, and it is quite suitable for integration. The uniform trans-conductance of 354nS/mm up to Vgs=+0.6V and the saturation current of 171mA/mm were obtained. As high as 43GHz of cut-off frequency hs been realized without any de-embedding of parasitic effects. The refractory WNx self-aligned gate GaAs MESFET technology is one of the most promising candidates for realizing linear power amplifier ICs and multifunction monolithic ICs for use in the digital mobile communication systems such as hand-held phone(HHP), personal communication system (PCS) and wireless local loop(WLL).

• Journal of Power Electronics
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• v.18 no.2
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• pp.375-382
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• 2018

A novel active controlled primary current cutting-off zero-voltage and zero-current switching (ZVZCS) PWM three-level dc-dc converter (TLC) is proposed in this paper. The proposed converter has some attractive advantages. The OFF voltage on the primary switches is only Vin/2 due to the series connected structure. The leading-leg switches can obtain zero-voltage switching (ZVS), and the lagging-leg switches can achieve zero-current switching (ZCS) in a wide load range. Two MOSFETs, referred to as cutting-off MOSFETs, with an ultra-low on-state resistance are used as active controlled primary current cutting-off components, and the added conduction loss can be neglected. The added MOSFETs are switched ON and OFF with ZCS that is irrelevant to the load current. Thus, the auxiliary switching loss can be significantly minimized. In addition, these MOSFETs are not series connected in the circuit loop of the dc input bus bar and the primary switches, which results in a low parasitic inductance. The operation principle and some relevant analyses are provided, and a 6-kW laboratory prototype is built to verify the proposed converter.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.73.1-73.1
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• 2010

For the successful cold starting of a fuel cell engine, either internal of external heat supply must be made to overcome the formation of ice from water below the freezing point of water. In the present study, switchable vanadium oxide compounds as variable temperature-electrical resistance materials onto the surface of flat metallic bipolar plates have been prepared by a dip-coating technique via an aqueous sol-gel method. Subsequently, the chemical composition and micro-structure of the polycrystalline solid thin films were analyzed by X-ray diffraction, X-ray fluorescence spectroscopy, and field emission scanning electron microscopy. In addition, it was carefully measured electrical resistance hysteresis loop over a temperature range from $-20^{\circ}C$ to $80^{\circ}C$ using the four-point probe method. The experimental results revealed that the thin films was mainly composed of Karelianite $V_2O_3$ which acts as negative temperature coefficient materials. Also, it was found that thermal dissipation rate of the vanadium oxide thin films partially satisfy about 50% saving of the substantial amount of energy required for ice melting at $-20^{\circ}C$. Moreover, electrical resistances of the vanadium-based materials converge on an extremely small value similar to that of pure flat metallic bipolar plates at higher temperature, i.e. $T{\geq}40^{\circ}C$. As a consequence, experimental studies proved that it is possible to apply the variable temperature-electrical resistance material based on vanadium oxides for the cold starting enhancement of a fuel cell vehicle and minimize parasitic power loss and eliminate any necessity for external equipment for heat supply in freezing conditions.