• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.694-704
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• 2011

In this paper, we present a design of a 5th order Chebyshev interdigital band-pass filter using inverter and susceptance slope parameter values obtained from EM simulated multi-port Y-parameters. The shifted length of the resonator is determined when the frequency of the transmission zero is separated far away from the center frequency. For the initial dimensions of the interdigital filter, the filter is decomposed into the individual resonators, and the dimensions are obtained using EM Simulation of the decomposed resonators. However, the interdigital filter with the dimensions determined from the EM simulation of the decomposed resonators shows slightly distorted response from the desired frequency response due to the coupling between non-adjacent resonators. To obtain a EM simulation dataset, EM simulation for this filter is carried out by parameter sweep with constant ratio for the initial values. In this dataset, it is determined the final values for the filter by optimization. The fabricated filter by PCB shows an upper-shift of center frequency of about 70 MHz, which was caused by permittivity changed and tolerance of fabrication.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.4
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• pp.290-298
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• 2018

Herein, an S-band internally-matched power amplifier that shows a power capability of 300 W in a Long Term Evolution(LTE) band 7 is designed and fabricated using a CGHV40320D GaN HEMT from Wolfspeed. Based on the nonlinear model, the optimum source and load impedance are extracted from the source-pull and load-pull simulations at the fundamental and harmonic frequencies, and the harmonic impedance tuning circuits are implemented inside a ceramic package. The internally matched power amplifier, which is fabricated using a thin-film substrate with a high relative permittivity of 40 and an RF35TC PCB substrate, is measured at the pulsed condition with a pulse period of 1 ms and a duty cycle of 10%. The measured results show a maximum output power of 257~323 W, a drain efficiency of 64~71%, and a power gain of 11.5~14.0 dB at 2.62~2.69 GHz. The LTE-based measurement shows a drain efficiency of 42~49% and an ACLR of less than -30 dBc(excluding 2.62 GHz) at an average power of 79 W.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.493-493
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• 2014

The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.3 s.118
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• pp.273-281
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• 2007

This paper presented design for a dipole antenna operated at 900 MHz band RFID tag, and antenna performance varied by the sticked material was experimentally evaluated. When dipole antenna was sticked by the material having a difffrent electric characteristic such as dielectric material, fero-magnetic material and conductor, variations of antenna return loss and radiation pattern according to the sticked material kinds, size, and height between antenna and the sticked plate were experimentally observed and evaluated. When antenna was sticked by dielectric surface, the measured return loss and radiation pattern by affection of different dielectric permittivity ratio showed resonant frequency shift of about 40 MHz and relative attenuation of 1 dB to 3 dB. Even though frequency shift by size variation of the sticked plate was observed, the measured radiation pattern of dipole antenna located on the sticked plate was similar with one without backside plate. In the case of conductor or fero-magnetic material as the sticked ground plate, because of frequency shift and phase difference by distance between dipole antenna and the sticked ground plate, amplitude decrease of radiation pattern at 910 MHz was observed about 5 dB above.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.39-42
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• 2017

E-glass (electrical glass) fiber is the widely used as a reinforced composite material of PCBs (printed circuit boards). However, E-glass fiber is not stable because it has a dielectric constant of 6~7. On the other hand, D-glass (dielectric glass) fiber has a low dielectric constant of 3~4.5. Thus, it is adaptable for use as a reinforcing material of PCBs. In this study, we fabricated D-glass compositions with low dielectric constant, and measured the electrical and optical properties. In the glass composition, the boron content was changed from 9 to 31 wt%. To confirm the dependence of the dielectric constant on melting properties, D-glass with 22 wt% boron was melted at $1550^{\circ}C$ and $1650^{\circ}C$ for 2hrs. The glass melted at $1650^{\circ}C$ had a lower dielectric constant than the glass melted at $1550^{\circ}C$. Therefore, the D-glass with boron of 9~31 wt% was fabricated by melting at $1650^{\circ}C$ for 2hrs, and transparent clear glass was obtained. We identified the non-crystalline nature of the glass using an XRD (x-ray diffractometer) graph. The visible light transmittance values depending on the boron contents were measured and found to be 88.6 % ~ 82.5 %. Finally, the dielectric constant of the D-glass with 31 wt% boron was found to have decreased from 4.18 to 3.93.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.7
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• pp.1505-1510
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• 2014

High-Pass (ETC ; Electronic Toll Collection) system is one of the basic elements, which adopts a wireless communication method using 5.8 GHz and can realize a part of ITS (Intelligent Traffic System). On the other hand, communication errors occur frequently in Hi-Pass system due to signal erros, multi-path reflection, and/or system-to-system interferences. To solve these problems, an EM (Electro-Magnetic) wave absorber can be used. To solve these Problems, we fabricated some samples in the different composition ratios of Carbon, Sendust, and CPE, and it was confirmed that the optimum composition ratio of Carbon : Sendust : CPE is 10 : 40 : 50 wt.%. The complex relative permittivity and complex relative permeability were derived by using the measured data. In addition, the optimum design parameters for the absorber were determined by simulation. Then the absorption abilities were calculated by changing the thickness of the EM wave absorbers. As a result, the optimum thickness of the developed EM wave absorber was 2.85 mm with absorption ability over 22.4 dB at 5.8 GHz. Futhermore, the EM wave absorber was fabricated based on the simulated and designed values. The measured values agreed well with the simulated ones. Therefore, it was clearly shown that the developed EM wave absorber in this paper is to be applied in actual situations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.5
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• pp.944-949
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• 2015

This study proposed a patch antenna with a MIMO structure which is applicable for wireless communication equipment by combining a single patch antenna with a multi port. The proposed MIMO patch antenna was designed through the TRF-45 substrate with a relative permittivity of 4.5, loss tangent equal to 0.0035 and dielectric high of 1.6 mm, and the center frequency of the antenna was 2.45 GHz in the ISM (Industrial Scientific and Medical) band. The proposed MIMO patch antenna had a 500 MHz bandwidth from 2.16 ~ 2.66 GHz and 24.1% fractional bandwidth. The return loss and VSWR were -62.05 dB, 1.01 at the ISM bandwidth of 2.45 GHz. The Wibro band of 2.3 GHz was -17.43 dB, 1.33, the WiFi band of 2.4 GHz was -31.89 dB, 1.05, and the WiMax band of 2.5 GHz was -36.47 dB, 1.03. The radiation patterns included in the bandwidth were directional, and the WiBro band of 2.3 GHzhad a gain of 4.22 dBi, the WiFi band of 2.4 GHz had a gain of 4.12 dBi, the ISM band of 2.45 GHz had a gain of 4.06dBi, and the WiMax band of 2.5 GHz had a gain of 3.9 6dBi.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.5
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• pp.938-943
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• 2015

The proposed circular patch antenna was designed to include relative bandwidth of above 25% as designed by the FCC in the FCC in the 3.1 ~ 10.6 GHz band. The antenna was induced to have a wide band characteristic through two structures of the usual microstrip line and a microstrip line with a linear change in impedance. The proposed finally antenna was designed using an FR4_epoxy substrate with 4.7% permittivity, 0.02 of loss tangent, and 1.6 mm of thickness, and was simulated with the use of HFSS made by Ansys. Return loss at frequency, VSWR, radiation pattern and the gain of the antenna were analysed. As a result, if satisfied a return loss of -10 dB and $VSWR{\leq}2$ from 2.28 ~ 13.35 GHz, showing about the bandwidth of 11.89 GHz, and the radiation pattern was unidirectional in all bands. The antenna gain gradually increased from 2 ~ 8 GHz and had the highest gain of 7.92 dBi at 8 GHz. and the gain gradually decreased in the 9 ~ 12 GHz band.

• Journal of the Korean Magnetics Society
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• v.14 no.4
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• pp.131-137
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• 2004

For the aim of thin electromagnetic wave absorbers used in mobile telecommunication frequency band (0.8-2.0㎓), we investigate high-frequency magnetic, dielectric and microwave absorbing properties of iron particles dispersed in rubber matrix in this study. The major experimental variables are particle shape (sphere and flake) and initial particle size (in the range 5-70 $\mu\textrm{m}$) of iron powders. High value of magnetic permeability and dielectric permittivity can be obtained in the composites containing thin plate-shape (flake) iron particles (of which thickness is less than skin depth in ㎓frequency), which can be produced by mechanical forging of spherical iron powders using an attrition mill. This result is attributed to the reduction of eddy current loss (increase of permeability) and the increase of space charge polarization (increase of permeability). The optimum initial particle size is found to be about 10 $\mu\textrm{m}$ for the attainment of the material parameters (particularly, real part of complex permeability) satisfying the wave impedance matching. With the iron powders controlled in size and shape as absorbent fillers in rubber matrix, the thickness can be reduced to about 0.7mm with respect to -5㏈ reflection loss (70% power absorption) in mobile telecommunication frequency band.