• Title, Summary, Keyword: Permittivity

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S-Band 300-W GaN HEMT Harmonic-Tuned Internally-Matched Power Amplifier (S-대역 300 W급 GaN HEMT 고조파 튜닝 내부 정합 전력증폭기)

  • Kang, Hyun-Seok;Lee, Ik-Joon;Bae, Kyung-Tae;Kim, Seil;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.4
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    • pp.290-298
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    • 2018
  • Herein, an S-band internally-matched power amplifier that shows a power capability of 300 W in a Long Term Evolution(LTE) band 7 is designed and fabricated using a CGHV40320D GaN HEMT from Wolfspeed. Based on the nonlinear model, the optimum source and load impedance are extracted from the source-pull and load-pull simulations at the fundamental and harmonic frequencies, and the harmonic impedance tuning circuits are implemented inside a ceramic package. The internally matched power amplifier, which is fabricated using a thin-film substrate with a high relative permittivity of 40 and an RF35TC PCB substrate, is measured at the pulsed condition with a pulse period of 1 ms and a duty cycle of 10%. The measured results show a maximum output power of 257~323 W, a drain efficiency of 64~71%, and a power gain of 11.5~14.0 dB at 2.62~2.69 GHz. The LTE-based measurement shows a drain efficiency of 42~49% and an ACLR of less than -30 dBc(excluding 2.62 GHz) at an average power of 79 W.

Development of the EM wave Absorber for Improving the Performance of Hi-Pass System in ITS (ITS에 있어서 Hi-Pass 시스템의 성능 개선을 위한 전파흡수체의 개발)

  • Kim, Dong Il;Kim, Jeong Chang;Joo, Yang Ick
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.7
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    • pp.1505-1510
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    • 2014
  • High-Pass (ETC ; Electronic Toll Collection) system is one of the basic elements, which adopts a wireless communication method using 5.8 GHz and can realize a part of ITS (Intelligent Traffic System). On the other hand, communication errors occur frequently in Hi-Pass system due to signal erros, multi-path reflection, and/or system-to-system interferences. To solve these problems, an EM (Electro-Magnetic) wave absorber can be used. To solve these Problems, we fabricated some samples in the different composition ratios of Carbon, Sendust, and CPE, and it was confirmed that the optimum composition ratio of Carbon : Sendust : CPE is 10 : 40 : 50 wt.%. The complex relative permittivity and complex relative permeability were derived by using the measured data. In addition, the optimum design parameters for the absorber were determined by simulation. Then the absorption abilities were calculated by changing the thickness of the EM wave absorbers. As a result, the optimum thickness of the developed EM wave absorber was 2.85 mm with absorption ability over 22.4 dB at 5.8 GHz. Futhermore, the EM wave absorber was fabricated based on the simulated and designed values. The measured values agreed well with the simulated ones. Therefore, it was clearly shown that the developed EM wave absorber in this paper is to be applied in actual situations.

Study on the Physical Properties of the Gamma Beam-Irradiated Teflon-FEP and PET Film (Teflon-FEP 와 PET Film 의 감마선 조사에 따른 물리적 특성에 관한 연구)

  • 김성훈;김영진;이명자;전하정;이병용
    • Progress in Medical Physics
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    • v.9 no.1
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    • pp.11-21
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    • 1998
  • Circular metal electrodes were vacuum-deposited with chromium on the both sides of Teflon-FEP and PET film characteristic of electret and the physical properties of the two polymers were observed during an irradiation by gamma-ray from $\^$60/Co. With the onset of irradiation of output 25.0 cGy/min the induced current increased rapidly for 2 sec, reached a maximum, and subsequently decreased. A steady-state induced current was reached about in 60 second. The dielectric constant and conductivity of Teflon-FEP were changed from 2.15 to 18.0 and from l${\times}$l0$\^$-17/ to 1.57${\times}$10$\^$-13/ $\Omega$-$\^$-1/cm$\^$-1/, respectively. For PET the dielectric constant was changed from 3 to 18.3 and the conductivity from 10$\^$-17/ to 1.65${\times}$10$\^$-13/ $\Omega$-$\^$-1/cm$\^$-1/. The increase of the radiation-induced steady state current I$\^$c/, permittivity $\varepsilon$ and conductivity $\sigma$ with output(4.0 cGy/min, 8.5 cGy/min, 15.6 cGy/min, 19.3 cGy/min) was observed. A series of independent measurements were also performed to evaluate reproducibility and revealed less than 1% deviation in a day and 3% deviation in a long term. Charge and current showed the dependence on the interval between measurements, the smaller the interval was, the bigger the difference between initial reading and next reading was. At least in 20 minutes of next reading reached an initial value. It may indicate that the polymers were exhibiting an electret state for a while. These results can be explained by the internal polarization associated with the production of electron-hole pairs by secondary electrons, the change of conductivity and the equilibrium due to recombination etc. Heating to the sample made the reading value increase in a short time, it may be interpreted that the internal polarization was released due to heating and it contributed the number of charge carriers to increase when the samples was again irradiated. The linearity and reproducibility of the samples with the applied voltage and absorbed dose and a large amount of charge measured per unit volume compared with the other chambers give the feasibility of a radiation detector and make it possible to reduce the volume of a detector.

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Implementation of Capacitor and Inductor Applied LCP Substrate for 35-GHz frequency band (35 GHz 대역을 위한 LCP 기판 적용된 커패시터 및 인덕터 구현)

  • Lee, Jiyeon;Ryu, Jongin;Choi, Sehwan;Lee, Jaeyoung
    • Journal of the Microelectronics and Packaging Society
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    • v.27 no.4
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    • pp.67-75
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    • 2020
  • In this paper, by applying LCP substrate, the capacitor and inductor are implemented with a variety of value that can be used in 35 GHz circuits. Depending on how to apply it to the circuit, it is required high value by designing the basic structures such as electrode capacitor and spiral inductor. However they are not available in high-frequency domain, because their SRF(Self-Resonant Frequency) is lower than the frequency of 35-GHz. By finding the limit, this paper devised classifying passive devices for the DC and the high-frequency domain. The basic structure is suitable for DC and microstrip λ/8 length stub structure can be used for high-frequency. The open and short stub structure operate as a capacitor and inductor respectively in the frequency of 35 GHz. If their impedance is known, it is possible to extract the value through the impedance-related equation. By producing with the permittivity 2.9 LCP substrate, the basic structure which are available in the DC constituted a library of capacitance of 1.12 to 13.9 pF and inductance of 0.96 to 4.69 nH, measured respectively. The stub structure available in the high-frequency domain were built libraries of capacitance of 0.07 to 2.88 pF and inductance of 0.34 to 1.27 nH, calculated respectively. The measurements have proven how to diversify value, so libraries can be built more variously. It is possible to integrate with the operation circuit of TRM(Transmit-Receive Module) for the frequency 35-GHz, it will be an alternative to the passive devices that can be properly utilized in the circuit.