• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.259-262
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• 2012

This paper describes a delay-locked loop (DLL) that generates a 64-phase clock with the operating frequency of 125MHz. The proposed DLL use a $4{\times}8$ matrix-based delay line to improve the linearity of a delay line. The output clock with 64-phase is generated by using a CMOS multiplex and a inverted-based interpolator from 32-phase clock which is the output clock of the $4{\times}8$ matrix-based delay line. The circuit for an initial phase lock, which is independent on the duty cycle ratio of the input clock, is used to prevent from the harmonic lock of a DLL. The proposed DLL is designed using a $0.18-{\mu}m$ CMOS process with a 1.8 V supply. The simulated operating frequency range is 40 MHz to 200 MHz. At the operating frequency of a 125 MHz, the worst phase error and jitter of a 64-phase clock are +11/-12 ps and 6.58 ps, respectively.

• Journal of electromagnetic engineering and science
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• v.3 no.1
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• pp.62-66
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• 2003

Novel coupled line phase shifters and its equivalent phase delay line for compact broadband phased array antennas are proposed. These phase control circuits are designed to be less complex, small size and to use a less number of active devices. The phase shifter is able to control a 120$^{\circ}$ phase shift continuously, and the phase delay line for a reference phase has a fixed 60$^{\circ}$ shifted phase. Both have the low phase error of less than $\pm$3.5$^{\circ}$ and the low gain variations of less than 1 ㏈ within the 300 MHz bandwidth. These proposed circuits are adequate to form the efficient beam-forming networks with compactness, broadband, less complexity, and low cost.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.4
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• pp.861-864
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• 2005

In this paper, we system the system design and numerical analysis of the ultrafast optical delay line using by optical phase modulator. The numerical analysis carried out with 1310nm, lops laser and electro-optic phase modulator. As the results of numerical analysis, we show a scanning rate of 0.5 GHz and a delay range of 19.0ps. Compare with mechanical delay line, the optical delay line has a high scanning speed and a high repetition rate.

• Journal of IKEEE
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• v.6 no.1 s.10
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• pp.21-29
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• 2002

This paper describes a high resolution DLL(Delay Locked Loop) using all digital circuits. The proposed architecture is based on the three stage of coarse, fine and ultra fine phase tuning block which has a phase detector, selection block and delay line respectively. The first stage, the ultra fine phase tuning block, is tune to accomplish high resolution using a vernier delay line. The second and third stage, the coarse and fine tuning block, are tuning the phase margin of Unit Delay using the delay line and are similar to each other. It was simulated in 0.35um CMOS technology under 3.3V supply using HSPICE simulator. The simulation result shows the phase resolution can be down to lops with the operating range of 250MHz to 800MHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.7
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• pp.1552-1558
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• 2011

In this paper, a dual-loop Integer-N phase-delay locked loop(P DLL) architecture has been proposed using a low power consuming voltage controlled delay line(VCDL). The P DLL can have the LF of one small capacitance instead of the conventional second or third-order LF which occupies a large area. The proposed dual-loop P DLL can have a small gain VCDL by controlling the magnitude of capacitor and charge pump current on the loop of VCDL. The proposed dual-loop P DLL has been designed based on a 1.8V $0.18{\mu}m$ CMOS process and proved by Hspice simulation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.95-98
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• 2012

This paper describes a multiphase delay-locked loop (DLL) that generates a 32-phase output clock over the operating frequency range of 40 MHz to 280 MHz. The matrix-based delay line is used for high resolution of 1-bit delay. A calibration scheme, which improves the linearity of a delay line, is achieved by calibrating the nonlinearity of the input stage of the matrix. The multi-phase DLL is fabricated by using 0.11-${\mu}m$ CMOS process with a 1.2 V supply. At the operating frequency of 125MHz, the measurement results shows that the DNL is less than +0.51/-0.12 LSB, and the measured peak-to-peak jitter of the multi-phase DLL is 30 ps with input peak-to-peak jitter of 12.9 ps. The area and power consumption of the implemented DLL are $480{\times}550{\mu}m^2$ and 9.6 mW at the supply voltage of 1.2 V, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.394-397
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• 2003

Since the speed of operation in the system has been increasing rapidly, chips should have been synchronized. Then, synchronized circuits such as PLL (Phase Locked Loop), DLL (Delay Locked Loop) are used. VCO (Voltage Controled Oscillator) generated a frequency in the PLL has disadvantage such as jitter accumulation. On the other hands, VCDL (Voltage Controled Delay Line) used at DLL has an advantage which has no jitter accumulation. In this paper, a new and improved VCDL structure is suggested.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.11
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• pp.1111-1116
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• 2011

In this paper, a 60 GHz bidirectional active phase shifter with 130 nm CMOS is presented by replacing CMOS passive switchs in switched-line type phase shifter with Common Gate Amplifier(bidirectional amplifier). Bidirectional active phase shifter is composed of bidirectional amplifier blocks and passive delay line network blocks. The suitable topology of bidirectional amplifier block is CGA(Common Gate Amplifier) topology and matching circuits of input and output are symmetrical due to design same characteristic of it's forward and reverse way. The direction(forward and reverse way) and amplitude of amplification can be controlled by only one bias voltage($V_{DS}$) using combination bias circuit. And passive delay line network blocks are composed of microstrip line. An 1-bit phase shifter is fabricated by Dongbu HiTek 1P8M 130-nm CMOS technology and simulation results present -3 dB average insertion loss and respectively 90 degree and 180 degree phase shift at 60 GHz.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.87-90
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• 2000

This paper describes a register-controlled symmetrical delay-locked-loop (DLL) using hybrid delay line for use in a high frequency double-data-rate DRAM. The proposed DLL uses a hybrid delay line which can cover two-step delays(coarse/fine delay) by one delay element. The DLL dissipate less power than a conventional dual-loop DLL which use a coarse and a fine delay element and control separately. Additionally, this DLL not only achieves small phase resolution compared to the conventional digital DLL's when it is locked but it also has a great simple delay line compared to a complex dual-loop DLL.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.1
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• pp.137-144
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• 2013

A delay-locked loop (DLL) that generates a 32-phase clock with the operating frequency of 125 MHz is introduced. The proposed DLL uses a delay line of $4{\times}8$ matrix architecture to improve a differential non-linearity (DNL) of the delay line. Furthermore, a integral non-linearity (INL) of the proposed DLL is improved by calibrating phases of clocks that is supplied to four points of an input stage of the $4{\times}8$ matrix delay line. The proposed DLL is fabricated by using $0.11-{\mu}m$ CMOS process with a 1.2 V supply. The measured operating frequency range of the implemented DLL is 40 MHz to 280 MHz. At the operating frequency of 125MHz, the measurement results shows that the DNL and INL are +0.14/-0.496 LSB and +0.46/-0.404 LSB, respectively. The measured peak-to-peak jitter of the output clock is 30 ps when the peak-to-peak jitter of the input clock is 12.9 ps. The area and power consumption of the implemented DLL are $480{\times}550{\mu}m^2$ and 9.6 mW, respectively.