• Proceedings of the KIEE Conference
• /
• 1988.07a
• /
• pp.315-318
• /
• 1988

THE STUDY ABOUT CHARACTERISTICS OF PHOTO RESIST ITSELF (MINIMUM RESOLUTION, DEPTH OF FOCUS MARGIN AND CRITICAL DIMENSION CONTROL LATITUDE) WAS DONE AND REPORTED. THREE TYPES OF PHOTO RESISTS WERE TESTED. THE FIRST IS THE LOW MOLECULAR WEIGHT PHOTO-RESIST SHOWING THE NARROW DISTRIBUTION OF MOLECULAR WEIGHT (LOW MOLECULAR WEIGHT CONTROL TYPE), THE SECOND IS A PHOTO-RESIST CONTAINING THE INNER CONTRAST ENCHANCEMENT MATERIAL (INNER CEM TYPE) AND THE THIRD IS A NORMAL PHOTO-RESIST (HIGH MOLECULAR WEIGHT TYPE). THE INNER CEM TYPE AND THE LOW MOLECULAR WEIGHT CONTROL TYPE PHOTO-RESIST ARE MORE IMPROVED PHOTO-RESISTS. IT PROVED THAT THE MINIMUM RESOLUTION WAS IMPROVED BY 0.2 - 0.3 um, THE DEPTH OF FOCUS MARGIN WAS IMPROVED BY 0.8 - 1.2 um AND THE C.D. CONTROL LATITUIDE WAS IMPROVED.

• Journal of the Semiconductor & Display Technology
• /
• v.3 no.3
• /
• pp.37-40
• /
• 2004

This study presents numerical solutions of three-dimensional laminar flow-field formed by photo resist flow in a slit-coater model. We discuss on the governing equations, laminar viscosities and the computational model applied in our numerical calculation and some results. We prove that the structure of tapered-cavity aid to make uniform pressure-field and boundary effect is an important problem to improve coating uniformity. In view of uniformity improvement, it is necessary to study for the structure of cavity and flow path.

• Proceedings of the IEEK Conference
• /
• 1999.06a
• /
• pp.922-925
• /
• 1999

The Silylation photo-resist etch process was tested by Enhanced-ICP dry etcher. The comparison of the two process results of micro pattern etching with 0.25${\mu}{\textrm}{m}$ CD by E-ICP and ICP reveals that E-ICP has better quality than ICP The etch rate and the microloading effect was improved in E-ICP Especially, the problem of the lateral etch was improved in E-ICP.

• Journal of the Semiconductor & Display Technology
• /
• v.3 no.3
• /
• pp.41-44
• /
• 2004

The aim of this study is the confirmation of the coating uniformity affected by the surface tension and wall attachment angle in a slit-coater model. In this work, we use the commercial code (Fluent) to solve the two-phase flow formed with air and photo resist numerically. The results show that the surface tension is the most important factor to determine the coating efficiency in the view of coating uniformity, and the coating uniformity is 2% for our slit-coater model and conditions. To improve the coating uniformity, it is in need of minimization of the sidewall effect of slit-coater.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2001.11a
• /
• pp.171-171
• /
• 2001

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.65-66
• /
• 2009

This paper describes a procedure developed to fabricate negative photo resist SUMS to a semi-insulating (SI)-GaAs-based substrate. SU-8 is attractive for micromachine multi-layer circuit fabrication, because it is photo-polymerizable resin, leading to safe, and economical processing. This work demonstrates SUMS photo resist can be used for RFIC/MMIC application.

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.16 no.5
• /
• pp.198-204
• /
• 2007

This study was carried out to develope a flow control system using to supply PR(photo-resist) in the semi-conductor manufacturing process. The features of this system are to be able to measure the high viscosity and micro-flow. To meet above study object some ideas was induced to design a new concept valve with new material, multi-cross wheel, and new sealing method etc.. As the evaluations on the developed micro-flowmeter it was enough satisfied to use at the IT industries such as photo-resist process.

• 제어로봇시스템학회:학술대회논문집
• /
• 2002.10a
• /
• pp.55.4-55
• /
• 2002

In the semiconductor fabrication, particle contamination is wide-spread and one of major causes to yield loss. Extensive testing has revealed that even careful handling of wafers during processing may cause photo-resist materials to flake off wafer edges. So, to remove the photo-resist at the outer 5mm of wafers, UV(Ultraviolet) rays are exposed. WEE (Wafer Edge Exposure) process station is the system that exposes the wafer edge as prespecified by controlling the positioning mechanism and maintaining the light intensity level In this work, WEE process station has been designed so as to significantly lower the amount of particle contamination which occurs even during the most r...

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2008.06a
• /
• pp.573-574
• /
• 2008

• Proceedings of the Korean Magnestics Society Conference
• /
• 2001.04a
• /
• pp.78-79
• /
• 2001