• Title/Summary/Keyword: Photo numerical values

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Nondestructive and Rapid Estimation of Chlorophyll Content in Rye Leaf Using Digital Camera

    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.49 no.1
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    • pp.41-45
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    • 2004
  • We have developed and tested a new method for nondestructive estimation of chlorophyll- and nitrogen-contents in rye leaf. It was found that the relation-ships among nitrogen, chlorophyll content and fresh weight were significantly positive correlated. Nitrogen and chlorophyll content were positively correlated whereas correlation coefficients among R, G, R-B and G-B on the basis of photo-numerical values were negative. We have found that R/(R-B) obtained from data of digital camera is the best criterion to estimate the chlorophyll content of leaves. The regression curves of the relation between R/(R-B) and chlorophyll content were also calculated from the data collected on cloudy days. The coefficients of determination ($\textrm{r}^2$) were ranged from 0.33 to 0.99. In this study, the accuracy in estimating chlorophyll content from the color data of digital camera image could be improved by correcting with R, G, and B values. It is suggested that, for practical purposes, the image values estimated with sufficient accuracy using a portable digital camera can be applied for determining chlorophyll content and nitrogen status in plant leaves.

Photo-thermo-elastic interaction in a semiconductor material with two relaxation times by a focused laser beam

  • Jahangir, A.;Tanvir, F.;Zenkour, A.M.
    • Advances in aircraft and spacecraft science
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    • v.7 no.1
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    • pp.41-52
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    • 2020
  • The effect of relaxation times is studied on plane waves propagating through semiconductor half-space medium by using the eigen value approach. The bounding surface of the half-space is subjected to a heat flux with an exponentially decaying pulse and taken to be traction free. Solution of the field variables are obtained in the form of series for a general semiconductor medium. For numerical values, Silicon is considered as a semiconducting material. The results are represented graphically to assess the influences of the thermal relaxations times on the plasma, thermal, and elastic waves.

Development of Optical NC-Scales Fabrication Process (광학식 NC-스케일 제조기술의 개발)

  • 김희식;박준호
    • Korean Journal of Optics and Photonics
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    • v.3 no.4
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    • pp.273-279
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    • 1992
  • Position reading devices such as optical encoders are most essential components in numerical control (NC) machines and robots. Fabrication process of optical NC-scales was developed for domestic production. The whole process using photo-lithographic techniques consists of about 10 steps. The process parameters were to be carefully determined through many trial experiments. The scale marks of metal film was printed on a glass substrate. The optimum values of various process parameters were extrilcted. The quality of scale marks was attributed to the each process parameters.

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NUMERICAL AERODYNAMIC ANALYSIS OF A TRANSONIC COMMERCIAL AIRPLANE ACCORDING TO THE ANGLE OF ATTACK AND MACH NUMBER (천음속 여객기의 받음각과 마하수에 따른 공력 해석)

  • Kim, Y.K.;Kim, S.C.;Choi, J.W.;Kim, J.S.
    • Journal of computational fluids engineering
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    • v.13 no.4
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    • pp.66-71
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    • 2008
  • This research computes the viscous flow field and aerodynamics around the model of a commercial passenger airplane, Boeing 747-400, which cruises in transonic speed. The configuration was realized through the reverse engineering based on the photo scanning measurement. In results, the pressure coefficients at the several wing section on the wing surface of the airplane was described and discussed to obtain the physical meaning. The lift coefficient increased almost linearly up to $17^{\circ}$. Here the maximum lift occurred at $18^{\circ}$ according to the angle of attack. And the minimum drag is expected at $-2^{\circ}$. The maximum lift coefficient occurred at the Mach number 0.89, and the drag coefficient rapidly increased after the Mach number of 0.92. Also shear-stress transport model predicts slightly lower aerodynamic coefficients than other models and Chen's model shows the highest aerodynamic values. The aerodynamic performance of the airplane elements was presented.

Control of Plasma Characteristic to Suppress Production of HSRS in SiH4/H2 Discharge for Growth of a-Si: H Using Global and PIC-MCC Simulation

  • Won, Im-Hui;Gwon, Hyeong-Cheol;Hong, Yong-Jun;Lee, Jae-Gu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.312-312
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    • 2011
  • In SiH4/H2 discharge for growth process of hydrogenated amorphous silicon (a-Si:H), silane polymers, produced by SiH2 + Sin-1H2n ${\rightarrow}$ SinH2n+2, have no reactivity on the film-growing surface. However, under the SiH2 rich condition, high silane reactive species (HSRS) can be produced by electron collision to silane polymers. HSRS, having relatively strong reactivity on the surface, can react with dangling bond and form Si-H2 networks which have a close correlation with photo-induced degradation of a-Si:H thin film solar cell [1]. To find contributions of suggested several external plasma conditions (pressure, frequency and ratio of mixture gas) [2,3] to suppressing productions of HSRS, some plasma characteristics are studied by numerical methods. For this study, a zero-dimensional global model for SiH4/H2 discharge and a one-dimensional particle-in-cell Monte-Carlo-collision model (PIC-MCC) for pure SiH4 discharge have been developed. Densities of important reactive species of SiH4/H2 discharge are observed by means of the global model, dealing 30 species and 136 reactions, and electron energy probability functions (EEPFs) of pure SiH4 discharge are obtained from the PIC-MCC model, containing 5 charged species and 15 reactions. Using global model, SiH2/SiH3 values were calculated when pressure and driving frequency vary from 0.1 Torr to 10 Torr, from 13.56 MHz to 60 MHz respectively and when the portion of hydrogen changes. Due to the limitation of global model, frequency effects can be explained by PIC-MCC model. Through PIC-MCC model for pure SiH4, EEPFs are obtained in the specific range responsible for forming SiH2 and SiH3: from 8.75 eV to 9.47 eV [4]. Through densities of reactive species and EEPFs, polymerization reactions and production of HSRS are discussed.

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