• Journal of Sensor Science and Technology
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• v.15 no.5
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• pp.341-346
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• 2006

We have fabricated SOI CMOS active pixel image sensor with the pinned photodiode on handle wafer in order to reduce dark currents and improve spectral response. The structure of the active pixel image sensor is 4 transistors APS which consists of a reset and source follower transistor on seed wafer, and is comprised of the photodiode, transfer gate, and floating diffusion on handle wafer. The source of dark current caused by the interface traps located on the surface of a photodiode is able to be eliminated, as we apply the pinned photodiode. The source of dark currents between shallow trench isolation and the depletion region of a photodiode can be also eliminated by the planner process of the hybrid bulk/SOI structure. The photodiode could be optimized for better spectral response because the process of a photodiode on handle wafer is independent of that of transistors on seed wafer. The dark current was about 6 pA at 3.3 V of floating diffusion voltage in the case of transfer gate TX = 0 V and TX=3.3 V, respectively. The spectral response of the pinned photodiode was observed flat in the wavelength range from green to red.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.15-18
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• 2017

In this study, we have studied the characteristics of the organic photodiode varying due to the blending conditions of the quantum dots (QDs). The active layer of the photodiode was formed with poly (3-hexylthiophene) and phenyl-C61-butyric acid methyl ester, and CdSe QDs with and without ZnS shell were blended in the active layer. The photodiode with CdSe/ZnS QDs showed the highest power conversion efficiency (PCE) and short-circuit current (Jsc). The performance change of the organic photodiode by X-ray irradiation was also measured. Regardless of X-ray irradiation conditions, the photodiode with CdSe/ZnS QDs showed better stability than other cases.

• Journal of radiological science and technology
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• v.19 no.2
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• pp.71-77
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• 1996

Studies were conducted to determine the clinical application of photodiode. We compared photodiode with ion-chamber as to change of tube potential, tube current, mAs and measured decreasing rate of penetration dose. When tube potential was changed from 60 kVp to 120 kVp, output of photodiode and ion-chamber were changed from 0.4 to 1.625, and 1.018 to 4.268, respectively. This was a good agreement to theory that $I=Kv^2it$(I is intensity, K is constant, v is tube potential, i is tube current, t is time). Characteristics for change of tube current and mAs were also a good agreement to theory. And comparison in decreasing rate of penetration dose was similar except above 6 cm in depth. Our results indicated that photodiode was a good instrument for relative measurement of radiation exposure, but we can not use the photodiode for absolute radiation dose.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.863-867
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• 2008

In this paper, to increase the light current efficiency of photodiode, we fabricated aluminum-doped zinc oxide(AZO) thin films by RF magnetron sputtering. AZO thin films were deposited at low temperature of 100 $^{\circ}C$ and different RF powers of 50, 100, 150 and 200 W due to selective process technology. Then the AZO thin films were annealed at 400 $^{\circ}C$ for 1 hr in vacuum ambient to increase crystalline. The lowest resistivity of 1.35 ${\times}$ $10^{-3}$ ${\Omega}cm$ and a high transmittance over 90 % were obtained under the conditions of 3 mTorr, 100 'c and 150 W. The optimized AZO thin films were deposited as anti-reflection coating on PN junction of silicon photodiode. It was confirmed by the result of $V_r-I_{ph}$ curve that the efficiency of photodiode with AZO thin film was enhanced 17 % more than commercial photodiode.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1340-1343
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• 2007

We have simultaneously fabricated LTPS TFTs and integrated photodiodes on the same glass substrates without any additional LTPS process. The structure of an integrated photodiode is a lateral p-i-n diode with a gate. The performances of a photodiode were improved at a negative gate voltage.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.98-99
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• 2003

PIN photodiode has been used in solid-state detector for x-ray detection as a photosensor of visible light from scintillator. Since the light from CWO is short wavelength having peak at 490nm, the light is absorbed within a very shallow layer near the surface of the photodiode before arriving at the depletion layer and does not contribute to the signal. In designing the PIN photodiode, it is important to make the p-layer as shallow as possible. (omitted)

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.1
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• pp.111-116
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• 2006

In this paper, the image sensor using the a-Si:H TFT is proposed. The optimum amorphous silicon thin film is deposited using plasma enhanced chemical vapor deposition (PECVD). TFT and photodiode both with the thin film are fabricated and form image sensor. The photodiode shows that Idark is $10^{-12}A$, Iphoto is $10^{-9}A$ and Iphoto/Idark is $10^3$, respectively. In the case of a-Si:H TFT, it indicates that Ion/Ioff is $10^6$, the drain current is a few ${\mu}A$ and Vth is $2\~4$ volts. For the analysis on the fabricated image sensor, the reverse bias of -5 voltage in ITO of photodiode and $70{\mu}sec$ pulse in the gate of TFT are applied. The image sensor with good property was conformed through the measured photo/dark current.

• Bulletin of the Korean Chemical Society
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• v.14 no.2
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• pp.211-215
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• 1993

A multichannel optical detector system employing a self-scanning linear photodiode array has been developed. The photodiode array detector system is designed for various applications which require fast, multichannel detection of transient signals. The detector system consists of a controller which runs on an IBM personal computer and a detector head connected to the controller through a DB-15 cable. The entire scanning of 1024 detector elements is achieved in 20 ms. By using an on-board 16-bit counter/timer, the operational mode of the photodiode array detector is fully programmable by software. The design considerations and the performance of the photodiode array detector system is presented.

• Journal of the Korean Society for Precision Engineering
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• v.12 no.10
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• pp.69-77
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• 1995

This laser measurement system has been developed using He-Ne laser and photodiode. The laser beam intensity transmitted on a photodiode was disturbed by eccentrically rotating disk cam with various speeds. The photodiode and an amplifier were used to change the detected beam intensity into voltage. The digitized data through the developed system were recorded on a micro-computer by using a signal analysis program. Its reliability was ascertained by using FFT analyzer. The vibration of rotating disk cam can be analyzed by measureing the intensity change of laser beam which the results by FFT analyzer were similar to. The amplifier was devised to be able to modulate the fluctuations of laser beam. The voltage could be linearly recorded with the change of the laser beam intensity.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.482-485
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• 2004

We fabricated a hybrid bulk/fully depleted silicon on insulator (FDSOI) complementary metal oxide semiconductor (CMOS) active pixel image sensor. The active pixel is comprised of reset and source follower transistors on the SOI seed wafer, while the pinned photodiode and readout gate and floating diffusion are fabricated on the SOI handle wafer after the removal of the buried oxide. The source of dark current is eliminated by hybrid bulk/FDSOI pixel structure between localized oxidation of silicon (LOCOS) and photodiode(PD). By using the low noise hybrid pixel structure, dark currents qm be suppressed significantly. The pinned photodiode can also be optimized for quantum efficiency and reduce the noise of dark current. The spectral response of the pinned photodiode on the SOI handle wafer is very flat between 400 nm and 700 nm and the dark current that is higher than desired is about 10 nA/cm2 at a $V_{DD}$ of 2 V.