• Title/Summary/Keyword: Photoresist

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Synthesis of Imide Monomers for Application to Organic Photosensitive Interdielectric Layer

  • Kwon, Hyeok-Yong;Vu, Quang Hung;Lee, Yun-Soo;Park, Lee-Soon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.816-819
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    • 2008
  • A negative photoresist formulation was developed utilizing synthesized UV monomers containing imide linkage, photoinitiator, UV oligomer, and alkali developable polymer matrix. It was found that via-holes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the negative-type photoresist formulations.

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Formation of Black Matrix Pattern by using Black Photoresist

  • Cho, Yoon-Lae;Kim, Tae-Yong;Kim, Jin-Mog;Song, Jeong-Mok;Koh, Nam-Je
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.1047-1050
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    • 2002
  • Generally, the Black Matrix of CRT is formed by the application of photoresist and black material separately. We have developed the simple process for black matrix of CRT. We used the black photoresist, It made it possible that the formation of Black Matrix by application of the light exposure and development only once.

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A Study on Micro-patterning used the UV-Curable Resin (UV경화성 수지를 이용한 미세패턴 형성에 관한 연구)

  • 남수용
    • Journal of the Korean Graphic Arts Communication Society
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    • v.19 no.2
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    • pp.68-78
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    • 2001
  • UV-curable resin has the properties of quick-drying, thigh productivity at low temperature, energy savint, space saving, solventless, non-polluting and low-stinking, and thus, UV-curing system has been widely used in the fields of printing inks, adhesives, paints and coating agents. This study has been executed to micro-patterning used UV-curable resin, The micro-patterning properties of this photoresist were investigated under irradiation of UV light low pressure mercury lamp. When the exposed photoresist film was developed by pure water developer, the resolution of this photoresist was about 50$\mu\textrm{m}$.

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The Method and Apparatus for Photoresist Spray Coating with High Temperature Rotational Chuck (고온 회전 척을 구비한 포토레지스트 Spray Coating 방법 및 장치)

  • Park, Tae-Gyu;Kim, Jun-Tae;Kim, Kook-Jin;Suk, Chang-Gil
    • Proceedings of the KIEE Conference
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    • 2003.10a
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    • pp.42-44
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    • 2003
  • The paper presents the method and apparatus for conformal photoresist spray coating on the 3D structured substrate. The system consists of a high-temperature-rotational chuck, ultrasonic spray nozzle module, angle control module and nozzle moving module. The coating uniformity is acquired by controlling the moving speed of the ultrasonic spray nozzle across the substrate which is rotated constantly. To coat the photoresist conformally the spray angle of the nozzle and the temperature of the substrate are controlled during spray coating. The rotational chuck can be heated up by hot air or $N_2$. The photoresist (AZ1512) has been coated on the 3D structured wafer by spray coating system and the characteristics have been evaluated.

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A Study on the Maskless Plate Making Technology for Screen Printing(I) (Maskless용 스크린 제판 기술 연구(I))

  • Lee, Mi-Young;Park, Kyoung-Jin;Nam, Su-Yong
    • Journal of the Korean Graphic Arts Communication Society
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    • v.26 no.1
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    • pp.73-85
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    • 2008
  • We have manufactured a photoresist which has excellent dispersity and good applying property due to 330cps of viscosity for environment-friendly and economical maskless screen plate making. And the photoresist applied on the screen stretched was exposed without mask by beam projector with CRT light source. Then it was developed by air spray with $1.7kgf/cm^2$ of injection pressure. The pencil hardness and solvent resistance of curing photoresist film were worse than those of conventional photoresist film and the maximum resolution of line image formed by maskless screen plate making was 0.5 mm since the exposure system for maskless plate making has weak light intensity and the diffusion of light. But we could obtain maskless screen plate which has sharp edges of line image and confirm a possibility of dry development process by air spray method.

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The Development of Silylated Photoresist Etch Process by Enhanced- Inductively Coupled Plasma (Enhanced-Inductively Coupled Plasma (E-ICP)를 이용한 Silylated photoresist 식각공정개발)

  • 조수범;김진우;정재성;오범환;박세근;이종근
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.3
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    • pp.227-232
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    • 2002
  • The silylated photoresist etch process was tested by enhanced-ICP. The comparison of the two process results of micro pattern etching with $0.35\mu\textrm{m}$ CD by E-ICP and ICP reveals that I-ICP has bettor quality than ICP. The etch rate and the RIE lag effect was improved in E-ICP. Especially, the problem of the lateral etch was improved in E-ICP.

An Ellipsometry Study of Water Absorption in the 193 nm photoresist (Ellipsometry를 이용한 193 nm photoresist에서의 물의 흡수 연구)

  • Lee, Hyoung-Joo;Lee, Jung-Hwan;Seo, Ju-Bin;Kyoung, Jai-Sun;An, Il-Sin
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.2 s.15
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    • pp.37-39
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    • 2006
  • We employed in-situ spectroscopic ellipsometry(SE) and imaging ellipsometry(IE) to study the interaction of water and photoresist(PR) in 193 immersion lithography. Real time measurement of SE showed thickness increase when PR was immerged in water indicating swelling effect. From the temporal evolution we could observe its reaction-limited behavior. Meanwhile, IE could identify the modification of PR surface by contact of water even for a short period of a second.

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A Study on HEMT Device Process (Part I. Lift-off Process for the Metallization) (HEMT 소자 공정 연구 (Part 1. 금속박막 형성을 위한 Lift-off 공정연구))

  • 이종람;박성호;김진섭;마동성
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.10
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    • pp.1535-1544
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    • 1989
  • The overhang structure of photoresist in optical lithography was studied for the metallization of GaAs-related devices throughout lift-off method. Optical contact aligner with a dose of 8.5 m J/cm\ulcornerand with a wavelength of 300mm was used for ultraviolet exposure of single layer of S1400-27 photoresist. The overhang thickness shows a linear relationship with the soaking time in monochlorobenzene, which its magnitude becomes high at elevated softbake temperature. Such process conditions as a low softbake temperature, a long monochlorohbenzene soaking time and a little exposed energy make the development rate of photoresist lower. The optimum process conditions to obtain a target line-width, which include an appropriate overhang structure such as complete separation between the sidewall of photoresist pattern and the deposited metal edge, are determined as the softbake temperature of 64-74\ulcornerC, the monochlorobenzene soaking time of 10-15min, the ultraviolet exposure time of 70-100sec and the development time of 50-80sec.

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A Study of Measuring a sophisticated Photoresist dispense (PR(Photoresist) 분사량 측정에 관한 연구)

  • Shin, Dong-Won;Lee, Sung-Young;Kim, Sang-Sik;Lee, Joong-Hyeon;Han, Min-Suk
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.385-386
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    • 2008
  • Reducing the PR(Photoresist) dispense Rate is one of the important issues in Photolithography. It is a main concern that variation in PR dispense rate and existance of microbubble. so we need to measure the photoresist dispense rate more precisely. This paper presented a noble sensor of measuring the PR dispense and detecting the microbubble.

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Fabrication of Microlens Array Using Photoresist Thermal Reflow (Photoresist Thermal Reflow를 이용한 Microlens Array 제작)

  • Hwang, Sung-Ki;Baek, Sang-Hoon;Kwon, Jin-Hyuk;Park, Yi-Soon
    • Korean Journal of Optics and Photonics
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    • v.20 no.2
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    • pp.118-122
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    • 2009
  • An optical sheet with microlens array (MLA) is designed and fabricated as a substitute for the prism sheets of LCD backlight. Using photoresist thermal reflow, MLAs were fabricated on PET film with thickness of $100{\mu}m$, and we measured the change of MLA profile in terms of exposure time, reflow temperature and reflow time.