• Title, Summary, Keyword: Photoresist

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Effect of pulse plasma for thermally hardened photoresist residue removal (플라즈마 충격 방법을 이용한 열경화된 Photoresist 잔여물(residue) 제거 연구)

  • Ko, Hoon;Kim, Soo-In;Choi, Soo-Jeong;Lee, Chang-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.132-133
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    • 2007
  • 반도체 소자의 제조 공정 기술이 발전하고 초고집적화가 됨에 따라 소자 선폭도 급속하게 감소하였다. 이로 인하여 기존의 식각 공정에서 식각 후 남은 잔여 Photoresist residue는 소자 생산에 큰 영향이 없었으나 현재 이러한 잔여물은 초고집적 소자에 치명적인 문제를 발생시킬 수 있다. 본 실험에서는 세정액 분자에 플라즈마 충격을 가하여 세정액을 활성화함으로써 기존의 세정액과의 세정능력을 비교 분석하였다.

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Investigation of phenol phormaldehyde-based photoresist at an initial stage of destruction in $O_2$ and $N_2O$ radiofrequency discharges

  • Shutov, D.A.;Kang, Seung-Youl;Baek, Kyu-Ha;Suh, Kyung-Soo;Min, Nam-Ki;Kwon, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.214-215
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    • 2007
  • Etch rates and surface chemistry of phenol formaldehyde-based photoresist after short time $O_2\;and\;N_2O$ radio frequency (RF) plasma treatment depending on exposure time were investigated. It was found that the etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time in both gases. X-ray photoelectron spectroscopy (XPS) analysis showed that the surface chemical structure become nearly constant after the treatment of 15 sec. Concentration of surface oxygen-containing groups after processing both in oxygen and in $N_2O$ plasmas is similar.

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Analysis of Chemical and Morphological Changes of Phenol Formaldehyde-based Photoresist Surface caused by O2 Plasma

  • Shutov, D.A.;Kang, Seung-Youl;Baek, Kyu-Ha;Suh, Kyung-Soo;Min, Nam-Ki;Kwon, Kwang-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.5
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    • pp.211-214
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    • 2007
  • Chemical and morphological changes of phenol formaldehyde-based photoresist after $O_2$ radiofrequency(RF) plasma treatment depending on exposure time and source power were investigated. It was found that etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time. Contact angle measurements and X-ray photoelectron spectroscopy(XPS) analysis showed that the surface chemical structure become nearly constant after 15 sec of the treatment. Atomic force microprobe(AFM) measurements were shown that surface roughness was increased with plasma exposure time.

Fabrication of Microlens Array Using Photoresist Thermal Reflow (Photoresist Thermal Reflow를 이용한 Microlens Array 제작)

  • Hwang, Sung-Ki;Baek, Sang-Hoon;Kwon, Jin-Hyuk;Park, Yi-Soon
    • Korean Journal of Optics and Photonics
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    • v.20 no.2
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    • pp.118-122
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    • 2009
  • An optical sheet with microlens array (MLA) is designed and fabricated as a substitute for the prism sheets of LCD backlight. Using photoresist thermal reflow, MLAs were fabricated on PET film with thickness of $100{\mu}m$, and we measured the change of MLA profile in terms of exposure time, reflow temperature and reflow time.

The Development of Silylated Photoresist Etch Process by Enhanced- Inductively Coupled Plasma (Enhanced-Inductively Coupled Plasma (E-ICP)를 이용한 Silylated photoresist 식각공정개발)

  • 조수범;김진우;정재성;오범환;박세근;이종근
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.3
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    • pp.227-232
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    • 2002
  • The silylated photoresist etch process was tested by enhanced-ICP. The comparison of the two process results of micro pattern etching with $0.35\mu\textrm{m}$ CD by E-ICP and ICP reveals that I-ICP has bettor quality than ICP. The etch rate and the RIE lag effect was improved in E-ICP. Especially, the problem of the lateral etch was improved in E-ICP.

A Study on Photoresist Strip Process using DIO3 (오존수를 이용한 감광막 제거 공정에 관한 연구)

  • Chai, Sang-Hoon;Son, Young-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.11
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    • pp.1143-1148
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    • 2004
  • In this study, photoresist stripping in semiconductor or LCD (liquid crystal display) fabrication processes using DIO, was investigated. In order to obtain the high PR stripping efficiency of DIO. we have developed new ozone-generating system with high ozone concentration and ozone-resolving system with high contact ratio. In this study, we obtained ozone gas concentrations of 11 % by new ozone-generating system, ozone-resolving efficiency of 99.5 % and maximum solubility of 130 ppm in deionized water. We applied the newly designed equipments to photoresist stripping processes and obtained similar results to SPM(sulfuric-peroxide mixture) process characteristics.

Reclamation of High Purity Organic Solvents from Waste Photoresist Stripper (포토레지스트 스트리퍼 폐액으로부터 고순도 유기용제 회수)

  • Kim, Dae-Jin;Oh, Han-Sang;Kim, Jae-Kyeong;Park, Myeong-Jun;Lee, Moon-Yong;Koo, Kee-Kahb
    • Clean Technology
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    • v.13 no.4
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    • pp.257-265
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    • 2007
  • As a basic study for the development of pilot-scale distillation process of waste photoresist strippers from semiconductor industry, lab-scale experiments for the recovery of NMP (N-methy1-pyrrolidione) and BDG (Butyldiglycol) from waste photoresist strippers have been made using a spinning band vacuum distillation column. Purities of NMP and BDG obtained from the present experiments were higher than 99.5%. Furthermore, water content was less than 1000 ppm, color grade(APHA) less than 50, most metal contents except sodium less than 1 ppb. Those results indicate that NMP and BDG reclamed by distillation satisfy the their specifications required for the formulation of new photoresist strippers. Recovery rate of NMP and BDG was 96 and 53%, respectively, for type A, and 93 and 57%, respectively, for type B waste PR stripper solution.

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Preparation of Soft Etchant to Improve Adhesion Strength between Photoresist and Copper Layer in Copper Clad Laminates (CCL 표면과 포토리지스트와의 접착력 향상 위한 Soft 에칭액의 제조)

  • Lee, Soo;Moon, Sung-Jin
    • Journal of the Korean Applied Science and Technology
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    • v.32 no.3
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    • pp.512-521
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    • 2015
  • In this research, environmental friendly organic acid containing microetching system to improve adhesion strength between photoresist resin and Copper Clad Laminate(CCL) was developed without using strong oxidant $H_2O_2$. Etching rate and surface contamination on CCL were examined with various etching conditions with different etchants, organic acids and additives. to develope an optimum microetching condition. Etching solution with 0.04 M acetic acid showed the highest etching rate $0.4{\mu}m/min$. Etching solution with the higher concentration of APS showed the higher etching rate but surface contamination on CCL is very serious. In addition, stabilizer solution also played an important role to control the surface contamination. As a result of research, the etching solution containing 0.04 M of acetic acid, 0.1 M of APS with 4 g/L of stabilizer solution(ST-1) was best to improve adhesion between CCL and photoresist resin as well as showed the most clean and rough surface with the etching rate of $0.37{\mu}m/min$.

A Study on the Characteristics and Cleanliness of Fluidic Strip Process of Environment-Friendly Aqueous Stripper (친환경 수계 박리액의 유동박리 공정 특성 및 청정성 연구)

  • Lee, Ki-Seong;Lee, Jaeone;Kim, Young Sung
    • Clean Technology
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    • v.24 no.3
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    • pp.175-182
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    • 2018
  • In this research, we investigated the cleanliness by optimizing the water content of the aqueous stripper in fluidic strip process. The stripping properties of the photoresist with optimized aqueous stripper were compared with the commercial organic stripper. The stripping performance was evaluated by electrical and optical characteristics on the surface of the transparent electrode that compare with stripped the transparent electrode surface and the rare surface before patterning by the photoresist. As a result of the photoresist stripping process of the organic stripper and the aqueous stripper optimized for water content, the aqueous stripper exhibited better electrical and optical characteristics than the organic stripper. In the case of the fluidic strip process with organic stripper, the photoresist dissolves in the stripper solution during stripping which can cause re-adsorption by contamination. Whereas that the aqueous stripper under development seems to decrease the photoresist dissolution in the stripper solution. Because the cyclodextrin contained in the stripper captures organic photoresist into hall of cyclodextrin which stripped through swelling and tearing. The photoresist residue captured by the cyclodextrin can be filtered. After the fluidic stripping process by different chemical stripping mechanism, the cleanliness of the organic stripper and aqueous stripper was compared and analyzed.