• 제목/요약/키워드: Photoresist

검색결과 432건 처리시간 0.033초

나노패터닝을 위한 고에너지 전자빔 리소그래피 시뮬레이터 개발 및 검증 (A Simulator for High Energy E-beam Lithography for Nano-Patterning)

  • 김진광;김학;한창호;전국진
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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    • pp.359-362
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    • 2004
  • Electron beam on high energy acceleration, which travels deeply and sharply through photoresist, became to be used in e-beam lithography apparatus for nano-patterning in due to its high resolution. An advanced electron beam lithography simulation tool is currently undergoing development for nano-patterning. This paper will demonstrate such simulation efforts with experiments at 200 keV e-beam lithography processes on PMMA, ZEP520 of which photoresist parameters and characteristics will be explained with simulation results. Neureuther parameters was extracted from the contrast curve of the resist

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Use of Hard Mask for Finer (<10 μm) Through Silicon Vias (TSVs) Etching

  • Choi, Somang;Hong, Sang Jeen
    • Transactions on Electrical and Electronic Materials
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    • 제16권6호
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    • pp.312-316
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    • 2015
  • Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.

UV-LIGA 공정용 SU-8 PR 몰드 제작 공정 개발 (A Development of Fabrication of Processes of SU-8 PR Mold for UV-LIGA)

  • 김창교
    • 한국산학기술학회:학술대회논문집
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    • 한국산학기술학회 2002년도 추계학술발표논문집
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    • pp.238-242
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    • 2002
  • 본 논문에서는 3차원 마이크로구조물을 위한 새로운 Thick Photoresist(TPR) 공정 기술을 개발하였다. 일반적으로 Thin Photoresist는 얇은 두께로 코팅을 할 수 있다. 그러나 SU-8과 같은 TRP은 몇 십 ㎛ 또는 그 이상으로 코팅이 가능하고 높은 종횡비를 얻을 수 있다. SU-8과 같은 TPR을 사용하여 마이크로구조물을 제작할 때 TPR의 crack들은 bake시의 갑작스런 tool down에 의한 stress에 의해 나타나는데, 이러한 crack들은 마이크로구조물의 도금을 어렵게 만든다. 본 논문에서는 TPR의 코팅, baking 시간 조절, cool down과 PEB(Post Expose Sake) 시간 조절을 통하여 stress에 의해 발생되는 crack이 없는 3차원 마이크로구조물을 제작할 수 있는 새로운 공정 기술을 개발하였다.

액침 홀로그래픽 리소그래피 기술을 이용한 2 차원 나노패터닝 (Two-dimensional Nano-patterning with Immersion Holographic Lithography)

  • 김상원;박신증;강신일;한재원
    • 한국정밀공학회지
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    • 제23권12호
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    • pp.128-134
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    • 2006
  • Two-dimensional nano-patterns are fabricated using immersion holographic lithography. The photoresist layer is exposed to an interference pattern generated by two incident laser beams($\lambda$=441.6 nm, He-Cd laser) of which the pitch size is less than 200 nm. Good surface profiles of the 2 dimensional patterns are achieved by trimming the lithography process parameters, such as, exposure time, developing time and refractive index of medium liquid.

고 투과 C 형 개구를 이용한 나노 크기 패턴 구현 (Nano-size Patterning with a High Transmission C-shaped Aperture)

  • 박신증;김용우;이응만;한재원
    • 한국정밀공학회지
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    • 제24권11호
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    • pp.108-115
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    • 2007
  • We have designed a high transmission C-shaped aperture using finite differential time domain (FDTD) technique. The C-shaped aperture was fabricated in the aluminum thin film on a glass substrate using a focused ion beam (FIB) milling. Nano-size patterning was demonstrated with a vacuum contact device to keep tight contact between the Al mask and the photoresist. Using 405 nm laser, we recorded a 50 nm-size dot pattern on the photoresist with the aperture and analyzed the spot size dependent on the dose illuminated on the aperture.

Pt 박막의 반응성 이온식각 (Reactive Ion Etching of Pt Thin Films)

  • 양정승;김민홍;윤의준
    • 한국진공학회지
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    • 제5권3호
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    • pp.263-267
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    • 1996
  • Reactive ion etching of Pt thinfilm was studied using $CCl_2F_2$, Ar, and $O_2$ . Etch rate of the Pt increased as the total pressure decreases and the RF power increased, while the flow rate of $CCl_2F_2$ had little effect on the Pt etch rate. Addition of $O_2$ had no effect on Pt etch rate up to 20% $O_2$ Selectivity between Pt and photoresist increased as the pressure decreased and the RF power increased, making it possible to pattern a thicker Pt layer with a thinner photoresist. A maximum etch rate of 300$\AA$/min was obtained at $CCl_2F_2$ flow rate of 20 sccm. RF power of 400 W, and the total pressure of 60mTorr.

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부동 게이트를 가진 새로운 구조의 오프셋 다결정 실리콘 박막 트랜지스터 (Novel offset gated poly-Si TFTs with folating sub-gate)

  • 박철민;민병혁;한민구
    • 전자공학회논문지A
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    • 제33A권7호
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    • pp.127-133
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    • 1996
  • In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photoresist reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate form both sides of the main gate. The poly-Si channel layer below the offset oxide is protected form the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of oru new device is the offset region due to the offset oxide. our experimental reuslts show that the offset region, due to the photoresist reflow process, has been sucessfully obtained in order to fabricate the offset gated poly-Si TFTs. The maximum ON/OFF ratio occurs at the L$_{off}$ of 1.1${\mu}$m and exceeds 1X10$^{6}$.

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Solenoid Type 3-D Passives(Inductors and Trans-formers) For Advanced Mobile Telecommunication Systems

  • Park, Jae Y.;Jong U. Bu
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권4호
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    • pp.295-301
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    • 2002
  • In this paper, solenoid-type 3-D passives (inductors and transformers) have been designed, fabricated, and characterized by using electroplating techniques, wire bonding techniques, multi-layer thick photoresist, and low temperature processes which are compatible with semiconductor circuitry fabrication. Two different fabrication approaches are performed to develop the solenoid-type 3-D passives and relationship of performance characteristics and geometry is also deeply investigated such as windings, cross-sectional area of core, spacing between windings, and turn ratio. Fully integrated inductor has a quality factor of 31 at 6 GHz, an inductance of 2.7 nH, and a self resonant frequency of 15.8 GHz. Bonded wire inductor has a quality factor of 120, an inductance of 20 nH, and a self resonant frequency of 8 GHz. Integrated transformers with turn ratios of 1:1 and n:l have the minimum insertion loss of about 0.6 dB and the wide bandwidth of a few GHz.

직병렬 유도결합형 안테나를 이용한 대면적 플라즈마 소스 연구

  • 김봉주;이승걸;오범환;이일항;박세근
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.201-204
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    • 2002
  • A large area inductively coupled plasma which is applicable to LCD processing is built with a modified single loop RF antenna. Combination of parallel and series paths of RF current through the antenna induces local enhancement of plasma density, which in turn provides uniform plasma density near the substrate. The plasma density distribution is measured and compared with that of the conventional single loop antenna. Aisotropic etching of photoresist is performed, and it is found that etch uniformity is improved by 3% from 15% of the conventional etcher over 350$\times$300mm glass substrates. Photoresist etching rate and uniformity can be further improved by applying a periodic weak axial magnetic fieid.

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