• 제목/요약/키워드: Photoresist

검색결과 432건 처리시간 0.078초

Monobath 의 처리조건에 대한 실용성 연구 (A Study on the Application of a Developing Condition for the Monobath)

  • 강현덕
    • 한국인쇄학회지
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    • 제12권1호
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    • pp.47-65
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    • 1994
  • Synthetic photoresist have partially displaced the natural materials, but bichromated casein have remained in use until recently at etching industry such as chemical milling. The object of this paper is that the mutual relations among factors and suitable latitude in pattern formation or etching process when is to be applied the casein ammonium bichromate photoresist.

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3차원 마이크로 구조를 위한 포토레지스트 스프레이 코팅 (Photoresist spray coating for three-dimensional micro structure)

  • 김도욱;은덕수;배영호;유인식;석창길;정종현;조찬섭;이종현
    • 센서학회지
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    • 제15권3호
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    • pp.153-157
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    • 2006
  • This paper presents the method for three-dimensional micro structure with photoresist spray coating system. The system consists of a high temperature rotational chuck, ultrasonic spray nozzle module, angle control module and nozzle moving module. Spray coating system is effected by several parameters such as the solid contents, the dispensed volume, the scanning speed of the spray nozzle and the wafer of dimension. The photoresist (AZ 1512) has been coated on the three-dimensional micro structure by spray coating system and the characteristics have been evaluated.

NDAS 유도체의 합성과 감광특성 (Synthesis and Photosensitive Characterization of NDAS Derivatives)

  • 이기창;최성용;배남경;윤철훈;황성규
    • 한국응용과학기술학회지
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    • 제13권3호
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    • pp.145-153
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    • 1996
  • Naphthoquinone-1,2-diazide-5-sulfonyl[NDAS] derivatives members of quinone diazide compound that are utilizable as photosensitive polymer material were synthesized, and photoresist were prepared by mixing these derivatives with m-cresol novolak(a matrix resin) at various weight ratios. Photosensitive characteristics of photoresist were studied by examining UV and IR, relative sensitivity using a Gray scale method, and SEM to analyze if they can be used as photosensitive material in printing process. Experimental results showed that, by UV, NDAS derivatives were photoconverted and developer-soluble photoresist were produced. The mixing ratio of 1:4(by mass) of NDAS+p-ydroxybenzophenone+sensitizer and m-cresol novolak gave rise to the highest dissolution rate. In addition, photoresist obtained at this condition resulted in the most superior sensitivity and contrast.

Photoresist 용융법을 이용한 미세렌즈 행렬 제작 (The Fabrication of Microlenses by Photoresist Melting Method)

  • 주영구;송현우;이용희;송석호
    • 한국광학회지
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    • 제5권2호
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    • pp.298-303
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    • 1994
  • 두꺼운 Photoresist(PR)로 원기둥 모양을 만들고 이를 용융함으로써 미세렌즈 행렬을 제작하였다. 이 방법으로 직경 $25\mu\textrm{m}$, $50\mu\textrm{m}$, $100\mu\textrm{m}$의 렌즈를 만들고 전자주사현미경과 탐침형 표면측정기를 통해 그 모양을 확인하였다. 그리고 렌즈의 광학적 성능을 측정하기 위해 위상변이 간섭법을 사용하여 평행광의 렌즈 통과 후 파면을 구하였다. 여기서 기준 구면과의 파면오차를 구하여 렌즈 초점거리나 초점광도분포 등을 얻었다. 그 결과 직경 $100\mu\textrm{m}$, 초점거리 $164\mu\textrm{m}$의 미세렌즈는 초점의 spot 직경이 $25\mu\textrm{m}$보다 작은 것으로 측정되었다.

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MEMS switch 응용을 위한 free standing 금속 구조물에 관한 연구 (A free standing metal structures for MEMS switches)

  • 황현석;김응권;강현일;이규일;이태용;송준태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.187-188
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    • 2005
  • In this paper, big free standing metal structures for electrostatic MEMS switches are easily fabricated using photoresist sacrificial layer. The entire process sequence, through the removal of the sacrificial layer, is kept below 150 $^{\circ}C$ to avoid curing problem of photoresist sacrificial layer. Metal structure is fabricated by thermal evaporator and a self test electrode is fabricated underlying metal suspended structure for testing by electrostatic force. The new wet release process is considered using methanol rinse, general wet release process cause stiction problem by capillary force during drying, and the yield is dramatically improved than previous wet release process using DI water rinse. The fabrication becomes much simpler and cheaper with use of a photoresist sacrificial layer.

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산 증식형 포토레지스트로 Poly($MTC_{10}-co-tBMA_{90}$)의 합성 및 특성 연구 (Poly[(1-methacryloyloxy-4-tosyloxycyclohexane)-co-(tert-butyl methacrylate)] as an acid amplifying photoresist)

  • 권경아;이은주;임권택;정용석;정연태
    • 한국인쇄학회지
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    • 제20권2호
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    • pp.131-140
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    • 2002
  • Chemically amplified deep UV(CA-DUV) resists are typically based on a combination of an acid labile polymer and a photoacid generator(PAG) but acid amplification type photoresist is formulated by addition of the acid amplifiers to chemically amplified resist system(CAPs). We developed acid amplifiers base on cyclohexanediol such as 1-methacryloyloxy-4-tosyloxy cyclohexane(MTC) and poly(MTC$_{10}$-co-tBMA$_{90}$)(P-1) to enhance photosensitivity. P-1 is a copolymer of tert-butyl methacrylate and MTC as a positive working photoresist based on polymeric acid amplifier in order to enhance photosensitivity and simplify the process of fomulating a photoresist. P-1 exhibited 2X higher photosensitivity compared with PtBMA. The acid amplifiers showed reasonable thermal stability for resist processing temperature and higher photosensitivity compared with chemically amplified resist.

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반도체 감광막 제거공정 적용을 위한 고농도 오존발생장치 개발 (Development on the High Concentration Ozone Generator System for the Semiconductor Photoresist Strip Process)

  • 손영수;함상용
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제55권12호
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    • pp.591-596
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    • 2006
  • we have been developed on the ultra high concentration ozone generator system which is the core technology in the realization of the semiconductor photoresist strip process using the ozone-vapor chemistry. The proposed ozone generator system has the structure of the surface discharge type which adopt the high purity ceramic dielectric tube. We investigate the performance of the proposed ozone generator system experimentally and the results show that the system has very high ozone concentration characteristics of $19.7[wt%/O_2]$ at the flow rate of $0.3[{\ell}/min]$ of each discharge cell. As a result of the silicon wafer photoresist strip test, we obtained the strip rate of about 400[nm/min] at the ozone concentration of $16[wt%/O_2]$ and flow rate of $8[{\ell}/min]$. So, we confirmed that it's possible to use the proposed high concentration ozone generator system for the ozone-vapor photoresist strip process in the semiconductor and FPD industry.

Investigation of phenol phormaldehyde-based photoresist at an initial stage of destruction in $O_2$ and $N_2O$ radiofrequency discharges

  • Shutov, D.A.;Kang, Seung-Youl;Baek, Kyu-Ha;Suh, Kyung-Soo;Min, Nam-Ki;Kwon, Kwang-Ho
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.214-215
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    • 2007
  • Etch rates and surface chemistry of phenol formaldehyde-based photoresist after short time $O_2\;and\;N_2O$ radio frequency (RF) plasma treatment depending on exposure time were investigated. It was found that the etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time in both gases. X-ray photoelectron spectroscopy (XPS) analysis showed that the surface chemical structure become nearly constant after the treatment of 15 sec. Concentration of surface oxygen-containing groups after processing both in oxygen and in $N_2O$ plasmas is similar.

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