• 마이크로전자및패키징학회지
• /
• 제11권1호
• /
• pp.21-28
• /
• 2004

Polytetrafluoroethylene (PTFE/Teflon ) 인쇄회로기판용 미세 피치 솔더 범프 형성을 위해 dry film photoresist (DFR)를 photolithography 공정에 적용하였다. DFR lamination을 위한 test board는 폭 100$\mu\textrm{m}$와 두께 18$\mu\textrm{m}$의 copper line들이 100-200$\mu\textrm{m}$의 간격으로 배열된 형태로 디자인하였다. 15$\mu\textrm{m}$의 두께를 갖는 DFR을 hot roll laminator를 사용하여 lamination 온도와 속도를 변화시켜가면서 lamination 공정 실험을 수행하였다. 실험 결과, PTFE 인쇄회로기판에 DFR을 lamination하는 공정의 최적 조건은 lamination 온도 $150^{\circ}C$, 속도 약 0.63cm/s였다. UV exposure 및 development 공정을 거쳐 저융점 솔더 재료인 인듐을 증착하였다. DFR 박리 순서에 따른 두 가지 다른 reflow 공정을 통해 최소 지름 50$\mu\textrm{m}$, 최소 피치 100$\mu\textrm{m}$를 갖는 인듐 솔더 범프를 형성하였다.

• 반도체디스플레이기술학회지
• /
• 제12권2호
• /
• pp.79-84
• /
• 2013

Nanoimprint lithography (NIL) is the next generation photolithography process in which the photoresist is dispensed onto the substrate in its liquid form and then imprinted and cured into a desired pattern instead of using traditional optical system. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. Although one of the current major research trends of NIL is large-area patterning, the technical difficulties to keep the uniformity of the residual layer become severer as the imprinting area increases more and more. In this paper, with the rolling type imprinting process, a mold, placed upon the $2^{nd}$ generation TFT-LCD glass sized substrate($370{\times}470mm^2$), is rolled by a rubber roller to achieve a uniform residual layer. The prediction of residual layer thickness of the photoresist by rolling of the rubber roller is crucial to design the rolling type imprinting process, determine the rubber roller operation conditions-mpressing force & feeding speed, operate smoothly the following etching process, and so forth. First, using the elasticity theory of contact problem and the empirical equation of rubber hardness, the contact length between rubber roller and mold is calculated with consideration of the shape and hardness of rubber roller and the pressing force to rubber roller. Next, using the squeeze flow theory to photoresist flow, the residual layer thickness of the photoresist is calculated with information of the viscosity and initial layer thickness of photoresist, the shape of mold pattern, feeding speed of rubber roller, and the contact length between rubber roller and mold previously calculated. Last, the effects of rubber roller operation conditions, impressing force & feeding speed, on the residual layer thickness are analyzed with consideration of the shape and hardness of rubber roller.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
• /
• pp.497-500
• /
• 2004

In this paper, we developed a new photolithography process which used a water-soluble photoresist instead of organic solvent soluble photoresist, defined pentacene thin film. And pentacene OTFTs were fabricated with the water- soluble photolithography process.

• Carbon letters
• /
• 제24권
• /
• pp.55-61
• /
• 2017

Carbon micropatterns (CMs) were fabricated from a negative-type SU-8 photoresist by proton ion beam lithography and pyrolysis. Well-defined negative-type SU-8 micropatterns were formed by proton ion beam lithography at the optimized fluence of $1{\times}10^{15}ions\;cm^{-2}$ and then pyrolyzed to form CMs. The crosslinked network structures formed by proton irradiation were converted to pseudo-graphitic structures by pyrolysis. The fabricated CMs showed a good electrical conductivity of $1.58{\times}10^2S\;cm^{-1}$ and a very low surface roughness.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2004년도 추계학술대회 논문집
• /
• pp.123-126
• /
• 2004

We have demonstrated the fabrication of patterned 3D photonic crystals by holographic lithography in conjunction with soft lithography. Holographic lithography created 3D ordered macroporous structures and soft lithography made tailored defects. Because the hard baked photoresist pattern possessed high resistance against the uncured photoresist solution and the refractive index did not change appreciably by hard baking, a crosslinked photoresist was used as a relief pattern for the holographic fabrication of patterned 3D photonic crystals. More complicated defect geometries might be easily obtained with more complicated patterns on PDMS stamps. Moreover, the present results might be used as templates for 3D PCs of highindex defects that can be exploited as optical waveguides and optical circuits.

• Journal of Photoscience
• /
• 제7권2호
• /
• pp.47-52
• /
• 2000

The copolymmers of N, N-dimethylaminoethyl methacrylate(DAEM) and N-arylmethacrylamide (AMA) were prepared, and their photochemical properties as a negative photoresist were studied by the measurements of insoluble fraction, and by UV and IR absorption spectral changes. These copolymers are soluble in DMF, actone, methanol, of acidic buffer solutions. Solubility of these copolymer films in the vuffer solutions increased with the amount of DAEM units in the copolymer and decreased with the pH value. The insoluble fraction of the copolymer films in the buffer solution of pH 4 of in methanol increased with irradiation time and the amount of AMA units in the copolymer. UV and IR spectral changes indicated that not only photo-crosslinking but also the photo-Fries rearrangement took place upon irradiation with a 254nm UV light.

• 한국응용과학기술학회지
• /
• 제17권3호
• /
• pp.188-191
• /
• 2000

A new class of deep UV Photoresist based on the principles of chemical amplification was developed. This photoresist consists of three basic elements: a copolymer, blocked tetrabromobisphenol-A as a dissolution inhibitor and a photosensitive onium salt as a photoacid generator. On irradiation followed by a post exposure bake, tert-butoxycarbonyloxy phenyl group is converted to phenol group. Thus the initially base insoluble resin is converted under UV irradiation to a base soluble resin which may be preferentially removed by dissolution. This new photoresist display high sensitivity, 10 $mJ/cm^{2}$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.22-23
• /
• 2006

A process for removal of photoresist(PR) m semiconductor manufacturing using water vapor with ozone is presented. For the realization of the ozone/vapor mixture process, high concentration ozone generator and process facilities have developed. As a result of the silicon wafer PR strip test, we confirmed the high efficiency PR strip rates of 400nm/mm or more at the ozone concentration of 16wt%/$O_2$. The ozone/vapor mixture process is more effective than the ozonized water Immersion process.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
• /
• pp.886-888
• /
• 1998

By irradiating photoresist on Si or glass with $Ar^+$ (${\lambda}$=514 nm, CW) and Nd:YAG (${\lambda}$=266 and 532nm, pulse) laser beam, the photoresist was etched masklessly in air. Using a fourth harmonic Nd:YAG laser beam, the etching threshold of energy fluence was $25\;J/cm^2$ and the damage of substrate was appeared over $40\;J/cm^2$.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.443-444
• /
• 2006

We present a low temperature thermal process for the color photoresist on the flexible substrate for the LCD color filter module by the $TruNano^{TM}$ processor in combination with a compositional modification to the conventional color photoresist. By this method the curing temperature can be lowered by more than $100^{\circ}C$, and the curing process time also can be shortening by more than 20 min.