• 한국광학회지
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• 제33권6호
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• pp.324-330
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• 2022

포토레지스트의 노광 및 현상 특성을 각각 결정하는 Dill 및 Mack 모델 파라미터들을 측정하였다. 먼저, 노광량을 변화시켜가며 포토레지스트 샘플을 준비하였고, 노광량에 따른 투과율 변화를 측정하였다. 이 결과를 바탕으로 Dill 모델의 A, B, C 파라미터를 결정하였는데, 특히 C 파라미터를 결정하기 위하여 Dill 모델 방정식의 완전해를 사용하였다. 또한, 노광량별로 현상 시간에 따른 포토레지스트의 두께 변화를 측정하였고, 이 결과를 사용하여 Mack 모델의 R_min, R_max, a, n 파라미터를 결정하였다. 모델 파라미터 R_min, R_max, n만을 사용하는 간략화된 Mack 모델에 대해서도 파라미터값들을 결정해 보았는데, 네 개의 파라미터를 사용하는 본래 Mack 모델의 경우와 비교했을 때 측정결과와의 오차가 다소 커짐을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.353-357
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• 2010

Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

• 한국레이저가공학회지
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• 제3권2호
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• pp.35-43
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• 2000

Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.387-394
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• 2013

As the feature size of integrated circuits continues to decrease, the challenge of achieving an oxidation-free exposed layer after photoresist (PR) stripping is becoming a critical issue for semiconductor device fabrication. In this article, the hydrogen plasma characteristics in direct plasma and the PR stripping rate in remote plasma were studied using a $120{\Phi}$ cylindrical inductively coupled plasma source. E mode, H mode and E-H mode transitions were observed, which were defined by matching the $V_{rms}$ and total impedance. In addition, the dependence of the E-H mode transition on pressure was examined and the corresponding plasma instability regions were identified. The plasma density and electron temperature increased gradually under the same process conditions. In contrast, the PR stripping rate decreased with increasing proportion of $H_2$ gas in mixed $H_2/N_2$ plasma. The decrease in concentration of reactive radicals for the removal of PR with increasing $H_2$ gas flow rate suggests that NH radicals have a dominant effect as the main volatile product.

• International Journal of Precision Engineering and Manufacturing
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• 제3권1호
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• pp.26-32
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• 2002

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on the gravure printing roll. The selective laser hardening of the photoresist by Ar-ion laser(wavelength: 333.6∼363.8 nm) was controlled by the A/O modulator. The coating thickness in the range of 5∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines farmed under the laser power of 200∼260mW and irradiation time of 4.4∼6.6 $\mu$ sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line width of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1582-1584
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• 1996

The polycrystalline silicon thin film transistors (poly-Si TFT) are the most promising candidate for active matrix liquid crystal displays (AMLCD) for their high mobilities and current driving capabilities. The leakage current of the poly-Si TFT is much higher than that of the amorphous-Si TFT, thus larger storage capacitance is required which reduces the aperture ratio fur the pixel. The offset gated poly-Si TFTs have been widely investigated in order to reduce the leakage current. The conventional method for fabricating an offset device may require additional mask and photolithography process step, which is inapplicable for self-aligned source/drain ion implantation and rather cost inefficient. Due to mis-alignment, offset devices show asymmetric transfer characteristics as the source and drain are switched. We have proposed and fabricated a new offset poly-Si TFT by applying photoresist reflow process. The new method does not require an additional mask step and self-aligned ion implantation is applied, thus precise offset length can be defined and source/drain symmetric transfer characteristics are achieved.

• Transactions on Electrical and Electronic Materials
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• 제15권3호
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• pp.159-163
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• 2014

More accurate CD (Critical Dimension) control is required for the nanometer-scaled devices. However, since the reflectivity between substrate and PR (Photoresist) becomes higher, the CD (Critical Dimension) swing curve was intensified. The higher reflectivity also causes PR notching due to the pattern of sub-layer. For this device requirement, it was optimized for the thickness, refractive index(n) and absorption coefficient(k) in the bottom anti-reflective coating(BARC; SiON) and photoresist with the minimum reflectivity. The computational simulated conditions, which were determined with the thickness of 33 nm, n of 1.89 and k of 0.369 as the optimum condition, were successfully applied to the experiments with no standing wave for the 0.13um-device. At this condition, the lowest reflectivity was 0.44%. This optimum condition for BARC SiON film was applied to the process for 0.13um-device. The optimum SiON film as BARC to PR and sub-layer could be formed with the accurate CD control and no standing waver for the nanometer-scaled semiconductor manufacturing process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.2008-2010
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• 2002

Process conditions of a novel negative thick photoresist, JSR THB-$430N^{(R)}$, are established in this paper. Although SU-8 obtains uniform and high-aspect-ratio structures, it is hard to remove the SU-8 mold after electroplating. The JSR THB-$430N^{(R)}$ can be more easily removed than the SU-8 and has a low internal stress. Introducing two step strip processes using acetone and the jSR THB-$S1^{(R)}$, the JSR THB-$430N^{(R)}$ electroplating mold was removed completely and a JSR THB-$430N^{(R)}$ film stress is compressive less than 2 MPa. In this paper, we obatined $200{\mu}m$ thick PR structure and $100{\mu}m$ thick electroplated nickel structure using the JSR THB-$430N^{(R)}$ photoresist.

• 공업화학
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• 제1권2호
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• pp.116-123
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• 1990

감광성 orthonaphthoquinonediazide-sulfonyl 유도체를 합성하고, 그 감광특성에 대해 검토한 결과, UV에 의해 광변환 되어, 알칼리 가용성의 분해화합물이 생성됨을 확인하였다. 이 유도체를 PAC로, m-cresol novolac을 matrix resin으로 photoresist를 제조하고 감광 특성을 고찰하여, 미세 패턴용 photoresist로의 타당성을 확인하였다. 3, 4, 5-Trihydroxybenzophenone 의 벌키한 공명 구조는 노광부의 감도와 가용성을 향상시켰으며, PAC 와 matrix resin의 혼합 무게비가 3:8 일 때 가장 적절한 dissolution rate를 나타냈으므로, 이 photoresist가 정해진 조건 하에서 감도, 해상력이 가장 우수하였다.

• 공업화학
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• 제1권2호
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• pp.161-167
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• 1990

Methylphenyldichlorosilane을 중합시켜 poly(methylphenyl)silane(PMPS)을 합성하고 이를 photoresist로 이용하는데 있어서 화상형상특성을 설명하기 위하여 노광에 의한 광학계수 X, Y, Z를 측정하였다. 광학계수 X, Y, Z는 PMPS 필름에 광조사를 시킨 다음 투과도를 측정하여 구하였으며, 계수 Z는 광조사 시간에 따른 투과도의 초기 기울기로 부터 구하였다. 이들 계수로 부터 PMPS에 각종 증감제를 첨가하여 제조한 필름에 광조사를 시켜 광조사특성을 이론적으로 구하고 이를 잔막수득율을 측정한 결과 Z치와 잔막수득율은 parallel한 관계가 있었다.