• Title, Summary, Keyword: Photoresist

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Gravure Halftone Dots by Laser Direct Patterning

  • Jeong Suh;Lee, Jae-Hoon
    • International Journal of Precision Engineering and Manufacturing
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    • v.3 no.1
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    • pp.26-32
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    • 2002
  • Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on the gravure printing roll. The selective laser hardening of the photoresist by Ar-ion laser(wavelength: 333.6∼363.8 nm) was controlled by the A/O modulator. The coating thickness in the range of 5∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines farmed under the laser power of 200∼260mW and irradiation time of 4.4∼6.6 $\mu$ sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line width of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

A One-Component Negative Photoresist Based on an Epoxy Terpolymer Containing Oxime-Urethane Groups as a Photobase Generator

  • Chae, Kyu-Ho;Park, Jin-Hee
    • Macromolecular Research
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    • v.12 no.4
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    • pp.352-358
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    • 2004
  • For their application as one-component photoresists, we prepared epoxy terpolymers containing oxime-urethane and benzophenone groups by the radical polymerization of glycidyl methacrylate (GMA), metha-cryloxyethyl benzophenoneoxime urethane (MBU), and N-(4-benzoyl)phenylmaleimide (BPMI). The terpolymer composition was optimized to provide the most photosensitive photoresist. The photo-decomposition reaction of the oxime-urethane groups in the terpolymer was monitored by UV absorption spectroscopy, and the photo-crosslinking reaction of the epoxy terpolymer was observed by measuring the normalized thickness. The photosensitivity of the epoxy terpolymer increased as the amount of BPMI and MBU units increased up to 16 and 24 mol%, respectively. Among the terpolymers we prepared, terpolymer T-II(contents of GMA, MBU, BPMI are 75, 19, 6.1 mole%, respectively) exhibited the highest photosensitivity ( $D_{c}$ $^{0.5}$ = 430 mJ/$\textrm{cm}^2$) and had a moderate contrast (${\gamma}$$^{p}$ = 1.23). Negative-tone micropatterns having a line width of ca. 10 ${\mu}{\textrm}{m}$ were obtained by developing the system with chloroform.m.

Hydrogen Plasma Characteristics for Photoresist Stripping Process in a Cylindrical Inductively Coupled Plasma

  • Yang, Seung-Kook;Cho, Jung Hee;Lee, Seong-Wook;Lee, Chang-Won;Park, Sang-Jong;Chae, Hee-Sun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.4
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    • pp.387-394
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    • 2013
  • As the feature size of integrated circuits continues to decrease, the challenge of achieving an oxidation-free exposed layer after photoresist (PR) stripping is becoming a critical issue for semiconductor device fabrication. In this article, the hydrogen plasma characteristics in direct plasma and the PR stripping rate in remote plasma were studied using a $120{\Phi}$ cylindrical inductively coupled plasma source. E mode, H mode and E-H mode transitions were observed, which were defined by matching the $V_{rms}$ and total impedance. In addition, the dependence of the E-H mode transition on pressure was examined and the corresponding plasma instability regions were identified. The plasma density and electron temperature increased gradually under the same process conditions. In contrast, the PR stripping rate decreased with increasing proportion of $H_2$ gas in mixed $H_2/N_2$ plasma. The decrease in concentration of reactive radicals for the removal of PR with increasing $H_2$ gas flow rate suggests that NH radicals have a dominant effect as the main volatile product.

Reflectivity Control at Substrate / Photoresist Interface by Inorganic Bottom Anti-Reflection Coating for Nanometer-scaled Devices

  • Kim, Sang-Yong;Kim, Yong-Sik
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.3
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    • pp.159-163
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    • 2014
  • More accurate CD (Critical Dimension) control is required for the nanometer-scaled devices. However, since the reflectivity between substrate and PR (Photoresist) becomes higher, the CD (Critical Dimension) swing curve was intensified. The higher reflectivity also causes PR notching due to the pattern of sub-layer. For this device requirement, it was optimized for the thickness, refractive index(n) and absorption coefficient(k) in the bottom anti-reflective coating(BARC; SiON) and photoresist with the minimum reflectivity. The computational simulated conditions, which were determined with the thickness of 33 nm, n of 1.89 and k of 0.369 as the optimum condition, were successfully applied to the experiments with no standing wave for the 0.13um-device. At this condition, the lowest reflectivity was 0.44%. This optimum condition for BARC SiON film was applied to the process for 0.13um-device. The optimum SiON film as BARC to PR and sub-layer could be formed with the accurate CD control and no standing waver for the nanometer-scaled semiconductor manufacturing process.

Removal of Photoresist Mask after the Cl2/HBr/CF4 Reactive Ion Silicon Etching (Cl2/HBr/CF4 반응성 이온 실리콘 식각 후 감광막 마스크 제거)

  • Ha, Tae-Kyung;Woo, Jong-Chang;Kim, Gwan-Ha;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.5
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    • pp.353-357
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    • 2010
  • Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

Numerical Investigation of Factors affecting Photoresist Stripping Process on the ITO Surface using the Spray Method (노즐 분사 방식의 ITO 표면 포토레지스트 박리과정 요인의 수치해석)

  • Kim, Joon Hyun;Lee, Joon Hyuck;Kang, Tae Seong;Joo, Gi-Tae;Kim, Young Sung;Jeong, Byung Hyun;Lee, Dae Won
    • Journal of The Korean Society of Manufacturing Technology Engineers
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    • v.26 no.2
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    • pp.158-165
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    • 2017
  • This study investigated spraying factors applicable to stripper usage. Cyclodextrine, as environment-friendly material, was included in the stripper composition. An efficient spray technology was applied for the Photoresist strip. For industrial applications, stripping requires a temperature below $50^{\circ}C$, a strip time within 50 s, and chemically stable activation. Spraying factors were organized considering many conditions-orifice diameter, working pressure (inlet speed), spray distance, and spray angle. For commercial practicability, the flow rate was limited to 3 L/min. The nozzle parameters were nozzle orifice diameter of 1.8-2.2 mm, spray distance of 40-60 mm, and injection speed of 0.7-1.2 m/s. Through the thermal spray movement of the fluid, the thermal boundary layer for a chemical reaction just above the ITO-glass surface and momentum region for sufficient agitation (above 4 m/s) was achieved.

Stripping of Ion-Implanted Photoresist Using Cosolvent-Modified Supercritical Carbon Dioxide (공용매로 변형된 초임계 이산화탄소를 이용한 이온 주입 포토레지스트 세정)

  • Jung, In-Il;Kim, Ju-Won;Lee, Sang-Yun;Kim, Woo-Sik;Ryu, Jong-Hoon;Lim, Gio-Bin
    • Korean Chemical Engineering Research
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    • v.43 no.1
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    • pp.27-32
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    • 2005
  • We propose an effective and environmentally friendly dry stripping method using a supercritical carbon dioxide ($SCCO_2$) system modified by a single and multiple cosolvents to remove ion-implanted photoresist and residue from a wafer surface at three different temperatures (97, 148, $200^{\circ}C$) and pressures (200, 300, 400 bar). After high dose of ion implantation the photoresist was not easily removed by using pure $SCCO_2$, but swollen. The $SCCO_2$ system modified by single cosolvents and multiple cosolvents mixed with aprotic solvents could not effectively remove the heavy organics, but swell them. However, the $SCCO_2$ system modified with multiple cosolvent (5%, v/v) composed of DMSO and DIW showed high removal efficiency for ion-implanted photoresists at $97^{\circ}C$ and 200 bar for 30 min (about 80%). In this study it has been shown that the dry stripping method using $SCCO_2$ system modified with multiple cosolvents could replace either plasma ashing or acid and solvent wet bench method and dramatically reduce accompanied chemical usage and disposal.

Effects of Bias Voltage and Ion-incident Angle on the Etching of Photoresist in a High-density CHF3 Plasma (고밀도 CHF3 플라즈마에서 바이어스 전압과 이온의 입사각이 Photoresist의 식각에 미치는 영향)

  • Kang, Se-Koo;Min, Jae-Ho;Lee, Jin-Kwan;Moon, Sang Heup
    • Korean Chemical Engineering Research
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    • v.44 no.5
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    • pp.498-504
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    • 2006
  • The etch rates of photoresist (PR) and the etch selectivity of $SiO_2$ to PR in a high density $CHF_3$ plasma were investigated at different ion-incident angles and bias voltages. A Faraday cage was employed for the accurate control of ion-incident angles. The ion energy was controlled by changing bias voltages. The etch rate of $SiO_2$ continuously decreased with ion-incident angles but the etch rate of PR remained constant up to the middle angle region and decreased afterwards. The etch rates of $SiO_2$ normalized to those at $0^{\circ}$ incident angle changed with the ion-incident angle following a cosine(${\theta}$) curve. On the other hand, the normalized etch rates of the PR changed showing a drastic over-cosine shape in the middle angle region. The etch selectivity of $SiO_2$ to PR decreased with an increase in the ion-incident angle because the etch yields of PR were enhanced by physical sputtering in the middle angle region compared to the case of $SiO_2$ etching. The etch selectivity of $SiO_2$ to PR decreased with an increase in the bias voltage at nearly all ion-incident angles.

Activation of Stripper Solution by Plasma and Hardness/Modulus of Elasticity Change of the Surface (Plasma를 이용한 세정액의 활성화와 시료 표면의 탄성계수 및 강도 변화에 대한 연구)

  • Kim, Soo-In;Kim, Hyun-Woo;Noh, Seong-Cheol;Yoon, Duk-Jin;Chang, Hong-Jun;Lee, Jong-Rim;Lee, Chang-Woo
    • Journal of the Korean Vacuum Society
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    • v.18 no.2
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    • pp.97-101
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    • 2009
  • In the modem semiconductor industry, the progress that consumes the most capital and labor is cleansing process. Cleansing process is to remove impurities that can affect the operation of the device and deteriorate its function. Especially, Photoresist (PR) progress that etches the device always requires cleansing at the end of the progress. Also, HDI-PR (High-Dose Ion-implanted Photoresist) created from PR progress is difficult to remove. Thus, in modem IC cleansing, many steps of cleansing are used, including dry and wet cleansing. In this paper, we suggested to combine existing dry-cleansing and wet-cleansing, each represented by plasma cleansing and stripper solution, as Plasma Liquid-Vapor Activation (PLVA). This PLVA method enhances the effect of existing cleansing solution, and decreases the amount of solution and time required to strip. We stripped HDI-PR by activated solution and measured surface hardness and Young's modulus by Nano-indenter. Nano-indenter is the equipment that determines the hardness and the modulus of elasticity by indenting nano-sized tip with specific shape into the surface and measuring weight and z-axis displacement. We measured the change of surface hardness and Young's modulus before and after the cleansing. As a result, we found out that the surface hardness of the sample sharply decreased after the cleansing by plasma-activated PR stripper solution. It can be considered that if physical surface-cleansing process is inserted after this, more effective elimination of HDI-PR is possible.