• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.85-85
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• 2007

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.208-213
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• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

• Journal of Satellite, Information and Communications
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• v.6 no.1
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• pp.28-31
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• 2011

In this paper, a new set of structural and sacrificial material that is diamond like carbon (DLC)/photoresist for high performance piezoelectric RF-MEMS switches which are actuated in d33 mode is suggested. To avoid curing problem of photoresist sacrificial layer, DLC structure layer is deposited at room temperature by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. And lead zirconate titanate (PZT) piezoelectric layer is deposited on structure layer directly at room temperature by rf magnetron sputtering system and crystallized by rapid thermal annealing (RTA) equipment. Particular attention is paid to the annealing of PZT film in order to crystallize into perovskite and the variation of mechanical properties of DLC layer as a function of annealing temperature. The DLC layer shows good performance for structure layer in aspect to Young's modulus and hardness. The fabrication becomes much simpler and cheaper with use of a photoresist.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.180-186
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• 2002

Hot Plate is the major unit that it used to remove damp of wafer surface, to strength adhesion of photoresist (PR) and to bake coated PR in FAB process of semiconductor. The badness of Hot Plate (HP) has directly influence upon the performance of wafer, it is necessary to guarantee the performance of HP. In this study, a reliability evaluation system has been designed and developed, which is to measure and to estimate thermal uniformity and flatness of HP in range of temperature 0~$250^\circC$. This system has included the techniques which measures and analyzes thermal uniformity using infrared thermal vision, and which compensates measuring error of flatness using laser displacement sensor For measuring flatness, a measurement stage of 3 axes are developed which adapts the precision encoder. The allowable error of this system in respect of thermal uniformity is less $than\pm0.1^\circC$ and in respect of flatness is less $than\pm$1mm . It is expected that the developed system can measure from $\Phi200mm\;(wafer 8＂)\;to\;\Phi300mm$ (wafer 12＂) and also can be used in performance test of the Cool Plate and industrial heater, etc.

• Journal of Sensor Science and Technology
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• v.16 no.5
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• pp.325-330
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• 2007

For the application to optic devices, wafer level package including spacer with particular thickness according to optical design could be required. In these cases, the uniformity of spacer thickness is important for bonding strength and optical performance. Packaging process has to be performed at low temperature in order to prevent damage to devices fabricated before packaging. And if photosensitive material is used as spacer layer, size and shape of pattern and thickness of spacer can be easily controlled. This paper presents polymer bonding using thick, uniform and patterned spacing layer of SU-8 2100 photoresist for wafer level package. SU-8, negative photoresist, can be coated uniformly by spin coater and it is cured at $95^{\circ}C$ and bonded well near the temperature. It can be bonded to silicon well, patterned with high aspect ratio and easy to form thick layer due to its high viscosity. It is also mechanically strong, chemically resistive and thermally stable. But adhesion of SU-8 to glass is poor, and in the case of forming thick layer, SU-8 layer leans from the perpendicular due to imbalance to gravity. To solve leaning problem, the wafer rotating system was introduced. Imbalance to gravity of thick layer was cancelled out through rotating wafer during curing time. And depositing additional layer of gold onto glass could improve adhesion strength of SU-8 to glass. Conclusively, we established the coating condition for forming patterned SU-8 layer with $400{\mu}m$ of thickness and 3.25 % of uniformity through single coating. Also we improved tensile strength from hundreds kPa to maximum 9.43 MPa through depositing gold layer onto glass substrate.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.26 no.2
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• pp.158-165
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• 2017

This study investigated spraying factors applicable to stripper usage. Cyclodextrine, as environment-friendly material, was included in the stripper composition. An efficient spray technology was applied for the Photoresist strip. For industrial applications, stripping requires a temperature below $50^{\circ}C$, a strip time within 50 s, and chemically stable activation. Spraying factors were organized considering many conditions-orifice diameter, working pressure (inlet speed), spray distance, and spray angle. For commercial practicability, the flow rate was limited to 3 L/min. The nozzle parameters were nozzle orifice diameter of 1.8-2.2 mm, spray distance of 40-60 mm, and injection speed of 0.7-1.2 m/s. Through the thermal spray movement of the fluid, the thermal boundary layer for a chemical reaction just above the ITO-glass surface and momentum region for sufficient agitation (above 4 m/s) was achieved.

• Polymer(Korea)
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• v.35 no.1
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• pp.87-93
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• 2011

We developed a fluorene-containing multifunctional binder polymer for LCD color filter resist, and employing the binder polymer, carbon black based black photoresist (CBR) was prepared in order to apply it to the black matrix (BM). To obtain the multifunction of the binder polymer, we synthesized bisphenol fluorene epoxy acrylate-containing unsaturated polyester and identified the binder polymer structure with $^1H$ NMR, GPC and FTIR. The corresponding BFEA-polyester binder polymer was compared with the commercially available acryl binder toward the application to the CBR. From the BM lithography test, we found that the synthesized BFEA-polyester binder had better photocrosslinking capability and alkali solubility. In addition, the newly developed binder gave a good process margin, good resolution and adhesion property on a glass substrate.

• Clean Technology
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• v.17 no.4
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• pp.300-305
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• 2011

A mixture of supercritical carbon dioxide and a co-solvent was employed to strip a high-dose ion-implanted photoresist (HDIPR) from the surface of semiconductor wafers. The stripping efficiency was highly improved by the physical force generated from a ultrasonication tip inside the reactor. In addition, helium gas was injected in the reactor as a barrier gas before the introduction of pure supercritical $CO_2$ ($scCO_2$), which reduced the rinsing time significantly. The effect of co-solvents on the stripping efficiency was investigated. The wafer surfaces were analyzed by scanning electron microscopy and by an energy dispersive X-ray spectrometer.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2541-2543
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• 1998

This paper describes the fabrication process to fabricate metallic structure of high aspect ratio using LlGA-like process. SU-8 is used as an electroplating mold. SU-8 is an epoxy-based photoresist, designed for ultrathick PR structure with single layer coating [1,2]. We can get more than $100{\mu}m$ thick layer by single coating with conventional spin coater, and applying multiple coating can make thicker layers. In the experiments, we used different kinds of SU-8, having different viscosity. To optimize the conditions for mold fabrication process, experiments are performed varying spinning time and speed, soft-bake, develop and PEB (Post Expose Bake) condition. With the optimized condition, minimum line and space of $3{\mu}m$ pattern with a thickness of $40{\mu}m$ and $4{\mu}m$ pattern with a thickness of $130{\mu}m$ were obtained. Using the patterned PR as a plating mold, metallic structure was fabricated by electroplating. We have fabricated a electroplated nickel comb actuator using SU-8 as plating mold. The thickness of PR mold is $45{\mu}m$ and that of plated nickel is$40{\mu}m$. Minimum line of the mold is $5{\mu}m$. Patterned metallic layer or polymer layer, which has selectivity with the structural plated metallic layer, can be used as sacrificial layer for fabrication of free-standing structure.

• Korean Journal of Optics and Photonics
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• v.26 no.5
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• pp.261-264
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• 2015

In this paper we show that the photoresist-protective film of a printed circuit board (PCB) can be delaminated from the underlying photoresist layer by a single pulse of a nanosecond laser at 532 nm. After locally peeling the edge of the PCB with a laser beam of 9 mm size, Scotch tape was attached to the irradiated region to peel off the whole protective film. For a certain range of pulse energies the peeling probability was 100%, without leaving any damage. Since the use of a laser in initial delamination is noncontact and nondamaging, it may be more efficiently utilized in the PCB industry than the conventional knurling method based on mechanical pressing.