• Journal of the Korean Society for Precision Engineering
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• v.17 no.11
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• pp.191-198
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• 2000

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength: 333.6~363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5~11$\mu m$ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under the laser power of 200~260㎽ and irradiation time of 4.4~6.6 $\mu$sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10$\mu m$ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6$\mu m$ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• Safety and Health at Work
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• v.10 no.1
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• pp.114-121
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• 2019

Background: The photolithography process in the semiconductor industry uses various chemicals with little information on their constitution. This study aimed to identify the chemical constituents of photoresist (PR) products and their by-products and to compare these constituents with material safety data sheets (MSDSs) and analytical results. Methods: A total of 51 PRs with 48 MSDSs were collected. Analysis consisted of two parts: First, the constituents of the chemical products were identified and analyzed using MSDS data; second, for verification of the by-products of PR, volatile organic compounds were analyzed. The chemical constituents were categorized according to hazards. Results: Forty-five of 48 products contained trade secrets in amounts ranging from 1 to 65%. A total of 238 ingredients with multiple counting (35 ingredients without multiple counting) were identified in the MSDS data, and 48.7% of ingredients were labeled as trade secrets under the Korea Occupational Safety and Health Act. The concordance rate between the MSDS data and the analytical result was 41.7%. The by-product analysis identified 129 chemicals classified according to Chemical Abstracts Service No., with 17 chemicals that are carcinogenic, mutagenic, and reprotoxic substances. Formaldehyde was found to be released from 12 of 21 products that use novolak resin. Conclusion: We confirmed that several PRs contain carcinogens, and some were not specified in the toxicological information in the MSDS. Hazardous chemicals, including benzene and formaldehyde, are released from PRs products as by-products. Therefore, it is necessary to establish a systematic management system for chemical compounds and the working environment.

• Clean Technology
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• v.15 no.2
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• pp.69-74
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• 2009

A high-dose ion-implanted photoresist (HDIPR) was stripped off from the surface of a semiconductor wafer by using a mixture of supercritical carbon dioxide and a co-solvent. The additional ultrasonication improved the stripping efficiency remarkably and thus reduced the stripping time by supplying physical force to the substrate. We investigated the effect of co-solvents, co-solvent concentration, and stripping temperature and pressure on the stripping efficiency. The wafer surfaces before and after stripping were analyzed by scanning electron microscopy and by an energy dispersive X-ray spectrometer. The HDIPR could be stripped off completely in 3 min with 10%(w/w) acetone/sc$C0_2$ mixture at 27.6 MPa and 343 K.

• Clean Technology
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• v.23 no.4
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• pp.357-363
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• 2017

In this study, the supercritical carbon dioxide ($scCO_2$)/ n-butyl acetate (n-BA) co-solvent system was employed to remove an unexposed negative photoresist (PR) from the surface of a silicon wafer. In addition, the selectivity of the $scCO_2$/n-BA co-solvent system was confirmed for the unexposed and exposed negative PR. Optimum conditions for removal of the unexposed PR were obtained from various conditions such as pressure, temperature and n-BA ratio. The n-BA was highly soluble in $scCO_2$ without cloud point and phase separation in mostly experimental conditions. However, the $scCO_2$/n-BA co-solvent was phase separated at 100 bar, above $80^{\circ}C$. The unexposed and exposed PR was swelled in $scCO_2$ solvent at all experimental conditions. The complete removal of unexposed PR was achieved from the reaction condition of 160 bar, 10 min, $40^{\circ}C$ and 75 wt% n-BA in $scCO_2$, as measured by ellipsometry. The exposed photoresist showed high stability in the $scCO_2$/n-BA co-solvent system, which indicated that the $scCO_2$/n-BA co-solvent system has high selectivity for the PR removal in photo lithograph process. The $scCO_2$/n-BA co-solvent system not only prevent swelling of exposed PR, but also provide efficient and powful performance to removal unexposed PR.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.403-409
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• 1998

In this study, the effects of multi-dipole type of magnets on the characteristics of the inductively coupled plasmas and $SiO_2$ etch properties were investigated. As the magnets, 4 pairs of permanent magnets were used and, to etch $SiO_2, C_2F_6, CHF_3, C_4F_8, H_2$, and their combinations were used. The characteristics of the magnetized inductively coupled plasmas were investigated using a Langmuir probe and an optical emission spectrometer, and $SiO_2$ etch rates and the etch selectivity over photoresist were measured using a stylus profilometer. The use of multi-dipole magnets increased the uniformity of the ion density over the substrate location even though no significant increase of ion density was observed with the magnets. The use of the magnets also increased the electron temperature and radical densities while reducing the plasma potential. When $SiO_2$ was etched using the fluorocarbon gases, the significant increase of $SiO_2$ etch rates and also the increase of etch uniformity over the substrate were obtained using the magnets. In case of gas combinations with hydrogen, $C_4F_8/H_2$ showed the highest etch rates and etch selectivities over photoresist among the gas combinations with hydrogen used in the experiment. By optimizing process parameters at 1000 Watts of inductive power with the magnets, the highest $SiO_2$ etch rate of 8000 $\AA$/min could be obtained for 50% $C_4F_8/50% H_2$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.11a
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• pp.489-490
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.543-544
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• 2009

• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2727-2730
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• 2010

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.655-656
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• 2007

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2008.04a
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• pp.604-605
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• 2008