• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.437-438
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• 2010

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.123-123
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• 2006

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.193-195
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• 1989

A simple fabrication technique of diffraction gratings with short periods is presented. We can see that the monitoring of diffracted light from photoresist gratings during the development process provides optimum conditions for exposure and development processes. With this technique reproducibility and high quality of diffraction gratings is expected.

• Applied Chemistry for Engineering
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• v.16 no.5
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• pp.660-663
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• 2005

Aiming the development of novel acid amplifiers, 2-hydroxyphenyl-4-methylbenzenesulfonate (1), 3-hydroxyphenyl-4-methylbenzene sulfonate (2), 4-hydroxyphenyl-4-methylbenzenesulfonate (3) were synthesized as the aromatic acid amplifiers with good thermal stability. They were autocatalytically generated p-toluenesulfonic acid in the presence of small amount of acid evolved from a photoacid generator. These aromatic sulfonates showed excellent thermal stability in PtBMA film and were proven to be the first aromatic acid amplifier to act as a photosensitivity enhancer. When these compounds were coupled with a chemically amplified photoresist system, photosensitivity was enhanced up to 3~6 folds.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.521-524
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• 1999

Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by $O_2$ plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in $N_2$ ambient at $1100^{\circ}C$ for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.2 s.233
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• pp.228-231
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• 2005

In this paper, we present reusable quartz master fabricated by electron-beam lithography and dry etching process of quartz, and results of injection molding based on the reusable quartz master for the manufacturing of nano-scale information media. Since patterned structures of photoresist can be easily damaged by separation (demolding) process of nickel stamper and master, a master with photoresist cannot be reused in stamper fabrication process. In this work, we have made it possible of the repeated use of master by directly patterning on quart in nickel stamper fabrication process. We have designed and fabricated four different specimens including 100nm, 140nm 200nm and 400nm pit patterns. In addition, both intaglio and embossed carving patterns are fabricated for each specimen. In the preliminary test of injection molding, we have fabricated polycarbonate patterns with varying mold temperature. We have experimentally verified the fabrication process of the reusable quart master and possibility of quartz master as direct stamper.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.10
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• pp.546-550
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• 2004

Two fabrication approaches are proposed to planarize the sacrificial layer over hollow structures. One is the photoresist filling method that makes use of photolithography, thermal curing and plasma ashing. The other is the lamination method that is applying pressure and temperature to the organic film over the hollow structures. The fabrication results are compared with those of CMP process. Trenches and cavities with various dimensions have been made for the porposed process. Upon measuring the planarization levels, they are dependent on planarization methods and the geometrical size of hollow structures. The photoresist filling method is so strongly dependent on the width and depth of trenches that we have problems to use it for large dimensional trenches. To the contrary, the flatness of sacrificial layer over the trenches was found to be almost independent of trench dimensions for the lamination method. A CMP process shows the most excellent results, but the fabrication is complicated and the access to it is not so easy. It is important to choose the proper planarization method by considering the required flatness levels, materials to be planarized, and connection between the planarization step and the previous or the following process of it.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.25 no.1
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• pp.14-20
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• 2016

This paper describes a green stripping process to effectively strip the remaining DFR layer on a non-alkali-based ITO glass surface after an etching process. A stripper, water-soluble amine compound, is used to investigate the characteristics of stripping ability and to suggest a valid method for the green process. Increasing the composition (5-30% concentration) of the ethanol amine-based stripper was found to greatly reduce the stripping time applied in the dipping method. The composition (30%) achieved an excellent stripping effect and free-residue impurities. Additionally, it was possible to obtain the effect of stripping in a way to sustain the release before generating DFR sludge from the ITO glass surface by using dipping condition (stripping time) in the composition. An Additional stripping process (buffering) out of dipping can realize productivity improvement and cost reduction because of the higher proportion of re-use of the stripping solution used in the DFR removal step.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.134-140
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• 2002

Chemical mechanical polishing of aluminum and photoresist using colloidal silica-based slurry was experimented. The effects of slurry pH, silica concentration, and oxidizer ($H_2O_2$) concentration on surface roughness and removal rate were studied. The optimum slurry conditions for reduction of micro-scratch were investigated. The optimum chemical mechanical polishing with the colloidal silica-based slurry was compared with conventional chemical mechanical polishing with alumina-based slurry. Chemical mechanical polishing of the aluminum with the colloidal silica-based slurry showed improved result but chemical mechanical polishing of the photoresist did not. The improved result was comparative with that of chemical mechanical polishing with filtered alumina-based slurry which one of desirable methods to reduce the micro-scratch.

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.135-139
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• 2005

In this paper, negative SU-8 photoresist processed at low temperature is characterized in terms of delamination. Based on a $3^3$ factorial designed experiment, 27 samples are fabricated, and the degree of delamination is measured for each. In addition, nine samples are fabricated for the purpose of verification. Employing the. neural network modeling technique, a process model is established, and response surfaces are generated to investigate degree of delamination associated with three process parameters: post exposure bake (PEB) temperature, PEB time, and exposure energy. From the response surfaces generated, two significant parameters associated with delamination are identified, and their effects on delamination are analyzed. Higher PEB temperature at a fixed PEB time results in a greater degree of delamination. In addition, a higher dose of exposure energy lowers the temperature at which the delamination begins and also results in a larger degree of delamination. These results identify acceptable ranges of the three process variables to avoid delamination of SU-8 film, which in turn might lead to potential defects in MEMS device fabrication.