• Title, Summary, Keyword: Photoresist

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Novel Technology for Achieving Contrast Ratio over 800:1 In Super IPS Mode TFT-LCD

  • Lim, Ji-Chul;Choi, Youn-Seung;Park, Youg-Hak;Lee, Tae-Rim;Oh, Chang-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.27-28
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    • 2005
  • We developed Super IPS mode TFT-LCD TV which have contrast ratio over 800:1. To increase contrast ratio, polarizer film, TFT design and color filter photoresist are investigated. In this report, we describe the basic concept and effectiveness of each item. The application of a newly developed color filter photoresist was the most effective for achieving this high contrast ratio.

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Ellipsometry를 이용한 193 nm photoresist에서의 물의 흡수 연구

  • Lee Hyeong-Ju;Lee Jeong-Hwan;Seo Ju-Bin;Gyeong Jae-Seon;An Il-Sin
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • pp.172-176
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    • 2006
  • 본 논문에서는 물을 이용한 193nm immersion lithography에서 물이 photoresist(PR)에 흡수되는 현상을 측정하기 위하여 타원해석기(Ellipsometer)의 응용 가능성을 연구하였다. 물이 PR 에 흡수됨에 따라 swelling 현상이 발생하여 두께 증가로 나타났는데 이는 실시간 타원해석기를 적용하여 시간에 따른 두께 변화를 분석함으로써 그 반응정도를 분석해 낼 수 있었다. 또한 짧은 시간에 발생하는 물의 흡수 현상은 imaging 타원해석기론 이용하여 규명할 수가 있었다.

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Micro-Plasma Device Utilizing SU-8 Photoresist as a Barrier Rib

  • Jhuo, Long-Cai;Kim, Sung-O
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.21-23
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    • 2006
  • A newly designed micro-plasma device using SU-8 photoresist as a barrier rib has been successfully fabricated and characterized. Operating in neon gas at pressures from 300 to 800 Torr and having hexagonal structure, $5{\times}5$ arrays of micro-plasma device have been investigated. The driving voltage is lower than 250 V.

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Surface Preparation of III-V Semiconductors

  • Im, Sang-U
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.86.1-86.1
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    • 2015
  • As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

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Synthesis of Photoresist Using Environmental-benign Supercritical $CO_2$ Processes (환경친화적인 초임계 이산화 탄소 공정을 이용한 포토레지스트의 합성)

  • 허완수;이상원;박혜진;김장엽;홍유석;유기풍
    • Polymer(Korea)
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    • v.28 no.6
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    • pp.445-454
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    • 2004
  • The requirement for a much finer line width circuits on semiconductors needs new developers such as supercritical fluid to prevent the collapse of the photoresist micro-patterns. The copolymers contain t-butyl methacrylate having an acid-cleavable t-butyl group and supercritical fluid $CO_2$ soluble perfluorinated decyl methacrylate segments. The supercritical fluid $CO_2$-philic properties of the photoresist changed to supercritical fluid $CO_2$-phobic properties after the deprotection reaction by exposure, which made the exposed resist insoluble in the supercritical fluid $CO_2$ developer. The synthesized copolymers containing more than 30% of perfluorinated decyl methacrylate were found to be soluble in supercritical fluid $CO_2$. The variation of film thickness before and after exposure was largest when the mole ratio of perfluorinated decyl methacrylate in the copolymer was 30%.

The study about accelerating Photoresist strip under plasma (플라즈마 약액 활성화 방법을 이용한 Photoresist strip 가속화 연구)

  • Kim, Soo-In;Lee, Chang-Woo
    • Journal of the Korean Vacuum Society
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    • v.17 no.2
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    • pp.113-116
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    • 2008
  • As the integration in semiconductor display develops, semiconductor process becomes multilayer. In order to form several layer patterns, etching process which uses photoresistor (PR) must be performed in multilayer process. Repeated etching processes which take long time and PR residue cause mortal problems in semiconductor. To overcome such problems, we studied about the solution which eliminates PR effectively by using normal dry and wet etching method using plasma activated PR strip solvent in liquid condition. At first, we simulate the device which activates the plasma and make sure whether gas flow in device is uniform or not. Under activated plasma, etching effect is elevated. This improvement reduces etching time as well as display production time of semiconductor process. Generally, increasing etching process increases environmental hazards. Reducing etching process can save the etchant and protect environment as well.

Improvement of PR Stripper Efficient and Change of Surface Hardness for HDI-PR Used by PLVA Method (PLVA 방법을 활용한 PR Stripper의 성능 향상과 HDI-PR 표면의 내력 변화 연구)

  • Kim, Soo-In;Lee, Chang-Woo
    • Journal of the Korean Vacuum Society
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    • v.17 no.6
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    • pp.544-548
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    • 2008
  • At the semiconductor industry, Photoresist(PR) strip progress has high cost and time consuming process. Accordingly, many research group have been focused on the shortening of the PR strip progress. But the replacements of newly developed materials rather than normally used strip have accompanied by cost consumption. Therefore, we suggested the Plasma Liquid-Vapor Activation (PLVA) method of general PR strip solution for saving the PR strip time and the high strip rate of PR residue. The PLVA method was very effective for PR strip progress. Also, the ion damaged PR(high dose implanted photoresist: HDI-PR) was almost impossible to strip. However, it was very difficult to characterize the change of chemical composition of HDI-PR between with and without PLVA method. Thus, physical properties of HDI-PR surface with and without PLVA method were measured by using the nano-indenter system.

Photoresist

  • Kim, Jin Baek
    • Polymer Science and Technology
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    • v.1 no.6
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    • pp.370-385
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    • 1990
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Fabrication of $100{\mu}m$ thick mold and electroplating using thick photoresist (후막 감광제를 이용한 $100{\mu}m$ 두께 몰드 제작과 전해도금)

  • Jung, Hyoung-Kyoon;Ahn, Si-Hong;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
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    • pp.2008-2010
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    • 2002
  • Process conditions of a novel negative thick photoresist, JSR THB-$430N^{(R)}$, are established in this paper. Although SU-8 obtains uniform and high-aspect-ratio structures, it is hard to remove the SU-8 mold after electroplating. The JSR THB-$430N^{(R)}$ can be more easily removed than the SU-8 and has a low internal stress. Introducing two step strip processes using acetone and the jSR THB-$S1^{(R)}$, the JSR THB-$430N^{(R)}$ electroplating mold was removed completely and a JSR THB-$430N^{(R)}$ film stress is compressive less than 2 MPa. In this paper, we obatined $200{\mu}m$ thick PR structure and $100{\mu}m$ thick electroplated nickel structure using the JSR THB-$430N^{(R)}$ photoresist.

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