• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.185-192
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• 1995

In this study, very fine photoresist pattern was examined using the image reversal process. And very fine photoriesist pattern (less than 0.2um) was obtsined by optimizing the exposure and reversal baking condition of photoresist. The produced pattern does not show the loss of thickness, and has a sparp negative edge profile. also, the ion implanted 0.25um T-shaped gate MESFET was fabricated using this resist pattern and the directional evaporation of gate metal. The fabricated MESFET has the maximum transconductance of 302 mS/mm, and the threshold voltage of -1.8V, and the drain saturation current of this MESFET was 191 mA/mm.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.6
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• pp.36-40
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• 2009

Development of maskless lithography techniques can provide a potential solution for the photomask cost issue. Furthermore, it could open a market for small scale manufacturing applications. Since femtosecond lasers have been found suitable for processing of a wide range of materials with sub-micrometer resolution, it is attractive to use this technique for maskless lithography. As a femtosecond laser has recently been developed, both of high power and high photon density are easily obtained. The high photon density results in photopolymerization of photoresist whose absorption spectrum is shorter than that of the femtosecond laser. The maskless lithography using the two-photon absorption (TPA) makes micro structures. In this paper, we present a femtosecond laser direct write lithography for submicron PR patterning, which show great potential for future application.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.7
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• pp.59-64
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• 2002

Laser lithography technique is useful for fabricating micro-patterns of silicon wafers. In this work, the laser lithography micromachining technique is optimized based on Taguchi method. Sensitivity analysis was performed using laser scanning speed, laser power level, developing time and mixture ratio between developer and Di-water as the parameters. The results show that for the photoresist used in this work, 70${\mu}m$/s scan speed, 50㎽ laser power, 60sec. developing time and 6: 1 mixture ratio gives the best result. This work shows the effectiveness of laser lithography technique in fabricating patterns with a flew micrometer in width.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.408-411
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• 2003

최근 활발하게 연구가 진행되고 있는 마이크로 인덕터는 자기 데이터 저장을 위한 헤드, 자기장 센서, 마이크로 변압기와 휴대폰의 수동 소자와 같은 다양한 분야에 이용되고 있다. 마이크로 인덕터를 제작하기 위해 UV-LIGA 공정을 개발하였다. 도금 공정을 이용하여 마이크로 인덕터의 철심과 구리선 제작하였다. 도금 공정을 위해 필요한 마이크로 몰드는 여러 종류의 thick photoresist를 이용하여 저응력 공정으로 제작하였다. 도금 공정을 이용하여 toroid형 마이크로 인덕터를 제작하였다. 도금 공정에서 발생 할 수 있는 응력을 최소화할 수 있는 공정을 개발하였다.

• Applied Chemistry for Engineering
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• v.1 no.1
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• pp.1-10
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• 1990

Polysilane derivatives are attracting considerable attention as a new class of material since 1980. The preparation methods of low molecular weight, cyclic, and high molecular weight polysilane derivatives are described, and also photochemistry characteristics for silicon-silicon single bond and for the nature of the substituent on silicon backbone are discussed. Polysilanes may be used as a precursors to silicon carbide fiber, as photoresist in microelectronics, as photoconductor, and as photoinitatior for free radical polymerization.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.27-28
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• 2005

We developed Super IPS mode TFT-LCD TV which have contrast ratio over 800:1. To increase contrast ratio, polarizer film, TFT design and color filter photoresist are investigated. In this report, we describe the basic concept and effectiveness of each item. The application of a newly developed color filter photoresist was the most effective for achieving this high contrast ratio.

• Transactions of the Society of Information Storage Systems
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• v.2 no.3
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• pp.196-200
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• 2006

We are developing a phase change etching technology using an inorganic photoresist of GeSbTe film which is the recording material of the phase change disc. A selective etching phenomenon between amorphous and crystalline states can be utilized with an alkaline etchant. Phase-change pits could be formed using this technique, in which the etching selectivity is strongly dependent on the concentration of the etchant. The degree of etching was investigated by the transmittance between crystalline and amorphous films after the wet-etching. The pits patterned on the disc could be observed by AFM after wet-etching.

• ETRI Journal
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• v.31 no.6
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• pp.778-783
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• 2009

To fabricate uniform and reliable thin gold stripes that provide low-loss optical waveguides, we developed a novel liftoff process placing an additional $SiN_x$ layer under conventional photoresists. By patterning a photoresist and over-etching the $SiN_x$, the photoresist patterns become free-standing structures on a lower-cladding. This leads to uniform metal stripes with good reproducibility and effectively removes parasitic structures on the edge of the metal stripe in the image reversal photolithography process. By applying the newly developed process to polymer-based gold stripe waveguide fabrication, we improved the propagation losses about two times compared with that incurred by the conventional image-reversal process.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1500-1503
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• 2009

In this paper, we studied about atmospheric pressure remote plasma ashing of photoresist(PR), by using a modified dielectric barrier discharge(DBD). The effect of various gas combinations such as $N_2/O_2$, $N_2/O_2+SF_6$ on the changes PR ashing rate was investigated as a function of power. The maximum PR ashing rate of 1850 nm/min was achieved at $N_2$ (70 slm)/ $O_2$ (200 sccm) + $SF_6$ (3 slm). We found that as the oxygen and fluorine radical peaks were increased, the ashing rate is increased, too.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.564-566
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• 2007

Synthesis of two photoactive compounds containing core imide moiety was carried out for an application to interdielectric layer in TFTLCD array. An aqueous alkaline developable polymer matrix was synthesized by free radical copolymerization. A positive photoresist formulation was developed utilizing synthesized UV monomers, photoactive compound, binder polymer, sulfactant and alkali developable polymer matrix. It was found that via-holes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the new positive interdielectric material with high thermal stability.