• 제목, 요약, 키워드: Photoresist

검색결과 419건 처리시간 0.034초

3차원 마이크로 구조를 위한 포토레지스트 스프레이 코팅 (Photoresist spray coating for three-dimensional micro structure)

  • 김도욱;은덕수;배영호;유인식;석창길;정종현;조찬섭;이종현
    • 센서학회지
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    • v.15 no.3
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    • pp.153-157
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    • 2006
  • This paper presents the method for three-dimensional micro structure with photoresist spray coating system. The system consists of a high temperature rotational chuck, ultrasonic spray nozzle module, angle control module and nozzle moving module. Spray coating system is effected by several parameters such as the solid contents, the dispensed volume, the scanning speed of the spray nozzle and the wafer of dimension. The photoresist (AZ 1512) has been coated on the three-dimensional micro structure by spray coating system and the characteristics have been evaluated.

Dry Film Photoresist를 이용한 테프론 PCB 위 미세 피치 솔더 범프 형성 (Formation of Fine Pitch Solder Bumps on Polytetrafluoroethylene Printed Circuit Board using Dry Film Photoresist)

  • 이정섭;주건모;전덕영
    • 마이크로전자및패키징학회지
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    • v.11 no.1
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    • pp.21-28
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    • 2004
  • Polytetrafluoroethylene (PTFE/Teflon ) 인쇄회로기판용 미세 피치 솔더 범프 형성을 위해 dry film photoresist (DFR)를 photolithography 공정에 적용하였다. DFR lamination을 위한 test board는 폭 100$\mu\textrm{m}$와 두께 18$\mu\textrm{m}$의 copper line들이 100-200$\mu\textrm{m}$의 간격으로 배열된 형태로 디자인하였다. 15$\mu\textrm{m}$의 두께를 갖는 DFR을 hot roll laminator를 사용하여 lamination 온도와 속도를 변화시켜가면서 lamination 공정 실험을 수행하였다. 실험 결과, PTFE 인쇄회로기판에 DFR을 lamination하는 공정의 최적 조건은 lamination 온도 $150^{\circ}C$, 속도 약 0.63cm/s였다. UV exposure 및 development 공정을 거쳐 저융점 솔더 재료인 인듐을 증착하였다. DFR 박리 순서에 따른 두 가지 다른 reflow 공정을 통해 최소 지름 50$\mu\textrm{m}$, 최소 피치 100$\mu\textrm{m}$를 갖는 인듐 솔더 범프를 형성하였다.

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대면적 UV 임프린팅 공정에서 잔류층 두께 예측 (Prediction of Residual Layer Thickness of Large-area UV Imprinting Process)

  • 김국원
    • 반도체디스플레이기술학회지
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    • v.12 no.2
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    • pp.79-84
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    • 2013
  • Nanoimprint lithography (NIL) is the next generation photolithography process in which the photoresist is dispensed onto the substrate in its liquid form and then imprinted and cured into a desired pattern instead of using traditional optical system. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. Although one of the current major research trends of NIL is large-area patterning, the technical difficulties to keep the uniformity of the residual layer become severer as the imprinting area increases more and more. In this paper, with the rolling type imprinting process, a mold, placed upon the $2^{nd}$ generation TFT-LCD glass sized substrate($370{\times}470mm^2$), is rolled by a rubber roller to achieve a uniform residual layer. The prediction of residual layer thickness of the photoresist by rolling of the rubber roller is crucial to design the rolling type imprinting process, determine the rubber roller operation conditions-mpressing force & feeding speed, operate smoothly the following etching process, and so forth. First, using the elasticity theory of contact problem and the empirical equation of rubber hardness, the contact length between rubber roller and mold is calculated with consideration of the shape and hardness of rubber roller and the pressing force to rubber roller. Next, using the squeeze flow theory to photoresist flow, the residual layer thickness of the photoresist is calculated with information of the viscosity and initial layer thickness of photoresist, the shape of mold pattern, feeding speed of rubber roller, and the contact length between rubber roller and mold previously calculated. Last, the effects of rubber roller operation conditions, impressing force & feeding speed, on the residual layer thickness are analyzed with consideration of the shape and hardness of rubber roller.

레이저에 의한 포토레지스트의 마스크리스 페터닝 (Maskless patterning of Photoresist by laser)

  • 이경철;김재권;이천;최진호;이강욱;최익순
    • 대한전기학회:학술대회논문집
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    • pp.886-888
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    • 1998
  • By irradiating photoresist on Si or glass with $Ar^+$ (${\lambda}$=514 nm, CW) and Nd:YAG (${\lambda}$=266 and 532nm, pulse) laser beam, the photoresist was etched masklessly in air. Using a fourth harmonic Nd:YAG laser beam, the etching threshold of energy fluence was $25\;J/cm^2$ and the damage of substrate was appeared over $40\;J/cm^2$.

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Trihydric Phenol계 Photoresist의 합성과 그 감광 특성 (Synthesis and Photocharacteristics of Trihydric Phenol Photoresist)

  • 홍의석;고재용;박홍수
    • 한국응용과학기술학회지
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    • v.13 no.1
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    • pp.47-54
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    • 1996
  • Cinnamoyl ester(PGEFC) of poly(phloroglucinol-formaldehyde) glycidyl ether which has photosensitive functional group was prepared to apply to photoresist. Photosensitivity of PGEFC was estimated by the solubility difference in organic solvent before and after exposure to light. The yield of residual film was calculated by immersing the sample-coated quartz plates in the solvent which was used in coating. The yield of the residual film which was closely related to the sensitivity of the film, was affected by the degree of polymerization of the backbone resin, sensitizers and their concentration. The sensitivity was depended upon the degree of polymerization. Most of effective sensitizer for PGEFC among the sensitizers was 2, 6-dichloro-4-nitroaniline.

레이저 홀로그래피법을 이용한 폴리머 광결정의 패턴형성 기술 (Polymer Photonic Crystals Using Laser Holography Lithography)

  • 장원석;문준혁;양승만
    • 한국정밀공학회:학술대회논문집
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    • pp.123-126
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    • 2004
  • We have demonstrated the fabrication of patterned 3D photonic crystals by holographic lithography in conjunction with soft lithography. Holographic lithography created 3D ordered macroporous structures and soft lithography made tailored defects. Because the hard baked photoresist pattern possessed high resistance against the uncured photoresist solution and the refractive index did not change appreciably by hard baking, a crosslinked photoresist was used as a relief pattern for the holographic fabrication of patterned 3D photonic crystals. More complicated defect geometries might be easily obtained with more complicated patterns on PDMS stamps. Moreover, the present results might be used as templates for 3D PCs of highindex defects that can be exploited as optical waveguides and optical circuits.

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수용성 포토레지스트와 이를 이용한 유기 박막의 photolithography 공정 연구 (Photolithography process investment of water soluble photoresist and Organic thin film by using it.)

  • 김광현;김건주;류기성;김태호;송정근
    • 대한전자공학회:학술대회논문집
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    • pp.497-500
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    • 2004
  • In this paper, we developed a new photolithography process which used a water-soluble photoresist instead of organic solvent soluble photoresist, defined pentacene thin film. And pentacene OTFTs were fabricated with the water- soluble photolithography process.

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355nm UV 레이저를 이용한 AZ5214와 SU-8 포토레지스트 어블레이션에 관한 연구 (A Study on the Ablation of AZ5214 and SU-8 Photoresist Processed by 355nm UV Laser)

  • 오재용;신보성;김호상
    • 한국레이저가공학회지
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    • v.10 no.2
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    • pp.17-24
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    • 2007
  • We have studied a laser direct writing lithography(LDWL). This is more important to apply to micro patterning using UV laser. We demonstrate the possibility of LDWL and construct the fabrication system. We use Galvano scanner to process quickly micro patterns from computer data. And laser beam is focused with $F-{\theta}$ lens. AZ5214 and SU-8 photoresist are chosen as experimental materials and a kind of well-known positive and negative photoresist respectively. Laser ablation mechanism depends on the optical properties of polymer. In this paper, therefore we investigate the phenomenon of laser ablation according to the laser fluence variation and measure the shape profile of micro patterned holes. From these experimental results, we show that LDWL is very useful to process various micro patterns directly.

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Characterization of Photoresist Processing by Statistical Design of Experiment (DOE)

  • Kim, Gwang-Beom;Park, Jae-Hyun;Soh, Dae-Wha;Hong, Sang-Jeen
    • 한국전기전자재료학회:학술대회논문집
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    • pp.43-44
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    • 2005
  • SU-8 is a epoxy based photoresist designed for MEMS applications, where a thick, chemically and thermally stable image is desired. But SU-8 has proven to be very sensitive to variation in processing variables and hence difficult to use in the fabrication of useful structures. In this paper, negative SU-8 photoresist processed has been characterized in terms of delamination. Based on a full factorial designed experiment. Employing the design of experiment (DOE), a process parameter is established, and analyzing of full factional design is generated to investigate degree of delamination associated with three process parameters: post exposure bake (PEB) temperature, PEB time, and exposure energy. These results identify acceptable ranges of the three process variables to avoid delamination of SU-8 film, which in turn might lead to potential defects in MEMS device fabrication.

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($TruNano^{TM}$ processing of color photoresist for the flexible LCD module

  • Lee, Michael M.S.;Moon, Byung-Chun;Bae, Byung-Seong;Kim, Woo-Young;Kim, Nam-Hoon;Cheon, Chae-Il;Kim, Jeong-Seog
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.443-444
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    • 2006
  • We present a low temperature thermal process for the color photoresist on the flexible substrate for the LCD color filter module by the $TruNano^{TM}$ processor in combination with a compositional modification to the conventional color photoresist. By this method the curing temperature can be lowered by more than $100^{\circ}C$, and the curing process time also can be shortening by more than 20 min.

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